US2023242413A1PendingUtilityA1
Substrate-free crystalline 2d bismuthene
Est. expiryDec 6, 2038(~12.4 yrs left)· nominal 20-yr term from priority
C01G 29/00C30B 29/10C30B 29/60C30B 7/14C01P 2004/20C01P 2002/20C01P 2002/74Y10T428/2982C01P 2002/72C01P 2004/24C01P 2004/61C01P 2004/62C01P 2002/77C01P 2004/04C30B 29/02
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Claims
Abstract
The present disclosure generally relates to compositions comprising substrate-free crystalline 2D bismuthene, and the method of making and using the substrate-free crystalline 2D bismuthene.
Claims
exact text as granted — not AI-modified1 . A method of preparing substrate-free crystalline 2D bismuthene nanoflakes, wherein the method comprises a reductive reaction of NaBiO 3 with a capping polymer and a polyol.
2 . The method of claim 1 , wherein the method comprises steps:
dissolving the capping polymer in the polyol to form a mixture of the capping polymer and the polyol; heating the mixture to an elevated temperature for a period of time and then cooling the mixture to ambient temperature; adding NaBiO 3 to the mixture of the capping polymer and the polyol, and heating the newly formed mixture to an elevated temperature for a period of time; and cooling the reaction mixture to ambient temperature, thus forming the substrate-free crystalline 2D bismuthene nanoflakes.
3 . The method of claim 2 , wherein the polyol is ethylene glycol, the capping polymer is polyvinylpyrrolidone (PVP).
4 . The method of claim 2 , wherein the substrate-free crystalline 2D bismuthene nanoflakes are characterized by a substantially equilateral triangle shape.
5 . The method of claim 2 , wherein the substrate-free crystalline 2D bismuthene nanoflakes are characterized by an X-ray diffraction pattern (CuKα radiation, λ=1.54056 A) comprising a peak at 26.16 (2θ±0.1°), and optionally one or more peaks selected from the group consisting of 36.99, 38.64, 47.67, and 55.14 (2θ±0.1°).
6 . The method of claim 2 , wherein the substrate-free crystalline 2D bismuthene nanoflakes are characterized by a thickness between 3.8 nm to 4.5 nm.Join the waitlist — get patent alerts
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