US2023268356A1PendingUtilityA1

Manufacturing method of display device

Assignee: SAMSUNG DISPLAY CO LTDPriority: Apr 16, 2020Filed: Jan 18, 2023Published: Aug 24, 2023
Est. expiryApr 16, 2040(~13.7 yrs left)· nominal 20-yr term from priority
H10P 50/283H10P 50/287H10P 70/54H10P 70/20H10P 50/642H10D 30/031H10D 86/021H10D 86/0212C09K 13/04H10D 86/0231H10P 50/71H10P 50/73H10P 50/667H10P 50/266H10P 76/204H01L 27/1288G03F 7/0035G03F 7/0382H01L 27/1262C23F 1/00C09K 13/06
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Claims

Abstract

A method of manufacturing a display device in a chamber in which a material including yttrium is coated on an inner surface includes: forming a first layer pattern by dry etching on a substrate; depositing a second layer material on the first layer pattern; forming a photoresist pattern on the second layer material; completing a second layer pattern by using the photoresist pattern as an etch mask; and performing an additional acid etching process by using an etching solution including at least one of hydrochloric acid, sulfuric acid, or nitric acid before the forming of the photoresist pattern on the second layer material after the dry etching to form the first layer pattern.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An etching solution comprising: at least one of
 nitric acid with a wt% concentration of about 20% or less;   sulfuric acid with a wt% concentration of about 20% or less; or   hydrochloric acid with a wt% concentration of about 20% or less,   wherein the etching solution is used to prevent defect formation by removing an yttrium compound after a dry etching process.   
     
     
         2 . The etching solution of  claim 1 , wherein
 the wt% concentration of nitric acid is in a range from about 5 % to about 10%.   
     
     
         3 . The etching solution of  claim 2 , wherein
 the wt% concentration of sulfuric acid is in a range from about 2% to about 8%.   
     
     
         4 . The etching solution of  claim 2 , wherein
 the etching solution further includes phosphoric acid or acetic acid, and   a wt% concentration of phosphoric acid or acetic acid is included at about 10% to about 20%.   
     
     
         5 . The etching solution of  claim 1 , wherein
 the yttrium compound is Y 2 O 3  or YF 3 .

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