N-alkyl substituted cyclic and oligomeric perhydridosilazanes, methods of preparation thereof, and silicon nitride films formed therefrom

Abstract

Novel N-alkyl substituted perhydridocyclic silazanes, oligomeric N-alkyl perhydridosilazane compounds, and N-alkylaminodihydridohalosilanes, and a method for their synthesis are provided. The novel compounds may be used to form high silicon nitride content films by thermal or plasma induced decomposition.

We claim: 
     
         1 . An oligomeric N-alkyl perhydridosilazane having Formula (4): 
       
         
           
           
               
               
           
         
       
       wherein R is a linear or branched alkyl group having two to about ten carbon atoms and m is an integer of about 3 to 50. 
     
     
         2 . The oligomeric N-alkyl perhydridosilazane according to  claim 1 , wherein R is a linear or branched alkyl group having two to about four carbon atoms. 
     
     
         3 . The oligomeric N-alkyl perhydridosilazane according to  claim 2 , wherein R is selected from the group consisting of ethyl, isopropyl, and t-butyl groups. 
     
     
         4 . The oligomeric N-alkyl perhydridosilazane according to  claim 1 , wherein the silazane is poly(N-isopropylsilazane). 
     
     
         5 . The oligomeric N-alkyl perhydridosilazane according to  claim 1 , wherein the silazane is poly(N-ethylsilazane). 
     
     
         6 . The oligomeric N-alkyl perhydridosilazane according to  claim 1 , wherein the silazane is 1,3,5-tri-(tert-butyl)-trisilazane. 
     
     
         7 . An N-alkylaminodihydridohalosilane having Formula (5): 
       
         
           
           
               
               
           
         
       
       wherein R is a linear or branched alkyl group having two to about ten carbon atoms and X is a halogen. 
     
     
         8 . The N-alkylaminodihydridohalosilane according to  claim 7 , wherein the silane is N-ethylaminochlorosilane. 
     
     
         9 . The N-alkylaminodihydridohalosilane according to  claim 7 , wherein the silane is N-isopropylaminochlorosilane 
     
     
         10 . The N-alkylaminodihydridohalosilane according to  claim 7 , wherein the silane is N-tert-butylaminochlorosilane. 
     
     
         11 . A high silicon nitride content film formed by the thermal- or plasma-induced decomposition of a silazane according to  claim 1 . 
     
     
         12 . A method of producing an oligomeric N-alkyl perhydridosilazane according to  claim 1 , comprising reacting a primary alkyl amine with a dihalosilane at a temperature of less than about −10° C.