US2023286801A1PendingUtilityA1
Boron nitride nanotube purification
Est. expiryNov 29, 2036(~10.4 yrs left)· nominal 20-yr term from priority
C01B 21/0648B82Y 30/00B82Y 40/00C01P 2004/01C01P 2004/03C01P 2004/04C01P 2004/13C04B 35/583C01B 35/08C01B 35/146
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Claims
Abstract
Disclosed herein are processes for purifying as-synthesized boron nitride nanotube (BNNT) material to remove impurities of boron, amorphous boron nitride (a-BN), hexagonal boron nitride (h-BN) nanocages, h-BN nanosheets, and carbon-containing compounds. The processes include heating the BNNT materials at different temperatures in the presence of inert gas and a hydrogen feedstock or in the presence of oxygen.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 - 21 . (canceled)
22 . A process for purifying boron nitride nanotube (BNNT) material to remove impurities, the process comprising:
heating the BNNT material at a first temperature for a first duration to remove boron impurities, wherein the BNNT material is in the presence of an insert gas and a hydrogen feedstock during the first duration; heating the BNNT material at a second temperature greater than the first temperature for a second duration to remove boron nitride impurities; and heating the BNNT material at a third temperature less than the second temperature for a third duration to remove boron oxide impurities.
23 . The process of claim 22 , wherein the first temperature is about 500-650° C., and the first duration is about 0.16-12 hours.
24 . The process of claim 22 , wherein the BNNT material is in the presence of an insert gas and a hydrogen feedstock during the second duration.
25 . The process of claim 22 , wherein the BNNT material is in the presence of an insert gas and a hydrogen feedstock during the third duration.
26 . The process of claim 22 , wherein the second temperature is about 650-800° C.
27 . The process of claim 22 , wherein the second duration is about 1-12 hours.
28 . The process of claim 22 , wherein the third temperature is about 500-650° C.
29 . The process of claim 22 , wherein the third duration is about 0.16-1 hours.
30 . The process of claim 22 , wherein the first duration, the second duration, and the third duration are approximately the same amount of time.
31 . The process of claim 22 , further comprising pre-baking the BNNT material at a baking temperature for a baking duration to remove carbon impurities.
32 . The process of claim 31 , wherein the baking temperature is about 400-500° C., and the baking duration is about 0.5-3 hours.
33 . The process of claim 31 , wherein the pre-baking occurs before heating the BNNT material at a first temperature for a first duration.
34 . The process of claim 31 , wherein the BNNT material is pre-baked in an environment comprising ozone.
35 . The process of claim 22 , wherein the inert gas is nitrogen.
36 . The process of claim 22 , wherein the hydrogen feedstock is at least one of water vapor and hydrogen gas.
37 . The process of claim 36 , wherein the hydrogen feedstock comprises water vapor, and the amount of water vapor in the nitrogen gas is controlled by using a dry nitrogen gas and brining the dry nitrogen gas to saturated water vapor conditions at a temperature of about 30-100° C.
38 . The process of claim 22 , wherein the BNNT material is heated in an environment having a pressure of 0.1-12 atmospheres.
39 . A process for purifying a BNNT material, the process comprising:
heating the BNNT material in the presence of an insert gas and a hydrogen feedstock at a first temperature of 500-650° C. for a first duration of 0.16-12 hours to remove boron impurities; heating the BNNT material at a second temperature of 650-800° C. for a second duration of 1-12 hours to remove boron nitride impurities; and heating the BNNT material at a third temperature of 500-650° C. for a third duration of 0.16-1 hours to remove boron oxide impurities.
40 . The process of claim 39 , further comprising pre-baking the BNNT material at a baking temperature of 400-500° C. for a baking duration of about 0.5-3 hours to remove carbon impurities.
41 . The process of claim 39 , wherein the BNNT material is in the presence of an insert gas and a hydrogen feedstock during the second duration.
42 . The process of claim 41 , wherein the BNNT material is in the presence of an insert gas and a hydrogen feedstock during the third duration.Join the waitlist — get patent alerts
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