US2023333316A1PendingUtilityA1

Photonic devices

Assignee: RAYTHEON BBN TECHNOLOGIES CORPPriority: May 11, 2018Filed: Jun 22, 2023Published: Oct 19, 2023

Est. expiryMay 11, 2038(~11.8 yrs left)· nominal 20-yr term from priority

Inventors:Mohammad Soltani Eduardo M. Chumbes

H10P 14/3416H10P 14/3251H10P 14/3216H10P 14/3202H10P 14/2904H10P 14/3402H10D 62/8503H10D 30/4732H10D 30/47H10D 30/475H10D 30/015H10D 62/852H10D 62/149G02B 6/12H01L 29/2003H01L 29/778H01S 5/34333G02B 6/122G02F 1/01708G02F 1/01716H01S 5/125G02B 2006/12121G02B 2006/1213G02B 2006/12035G02B 2006/12142G02F 2202/108H01L 29/7783H01S 5/343H01S 2301/173H01S 5/3214H01S 5/04257H01S 5/18361H01S 5/04253H01S 5/18347H01S 5/22H01S 5/3211

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References

Claims

Abstract

Photonic devices including a distributed Bragg reflector (DBR) having a stack of Group III-Nitride layers and Aluminum Scandium Nitride layers.

Claims

exact text as granted — not AI-modified

What is claimed is: 
     
         1 . A photonic device comprising a distributed Bragg reflector (DBR), the DBR comprising a stack of Group III-Nitride layers and Aluminum Scandium Nitride layers. 
     
     
         2 . A photonic integrated circuit platform, comprising: a Group III-Nitride compound material of Al 1-x Sc x N; and a photonic waveguiding layer of Al y Ga 1-y N where 0&lt;x≤0.45 and 0≤y≤1. 
     
     
         3 . A photonic device, comprising: a Group III-Nitride quantum well photonic waveguiding layer; and a distributed Bragg reflector (DBR), such DBR comprising Al 1-x Sc x N, where: 0&lt;x≤0.45. 
     
     
         4 . The photonic device recited in  3  wherein the photonic device functions as an electro-optic modulator to modulate an incident light normal to the DBR layers.

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