US2023335757A1PendingUtilityA1
Exothermically responsive cathodes and methods of production thereof
Est. expiryMar 22, 2039(~12.7 yrs left)· nominal 20-yr term from priority
Inventors:Dennis Cravens
H01M 4/8875C22C 5/04C22F 1/14H01M 4/383H01M 4/921H01M 4/8878H01M 4/8885H01M 4/8896H01M 4/0471H01M 4/242Y02E60/50Y02E60/10
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Claims
Abstract
A method of producing electrodes includes selecting a palladium alloy, annealing the palladium alloy at a first temperature above 350° C., cold working the palladium alloy into a desired electrode shape, and annealing the palladium alloy at a second temperatures and for a time sufficient to produce a grain size between about 5 microns and about 100 microns. The method further includes etching the palladium alloy, rinsing the palladium alloy with at least one of water and heavy water, and storing the palladium alloy in an inert environment.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of producing electrodes comprising:
selecting a palladium alloy; annealing the palladium alloy at a first temperature above 350° C.; cold working the palladium alloy into a desired electrode shape; annealing the palladium alloy at a second temperature and for a time sufficient to produce a grain size between about 5 microns and about 100 microns; etching the palladium alloy; rinsing the palladium alloy with at least one of water and heavy water; and storing the palladium alloy in an inert environment.
2 . The method of claim 1 further comprising cleaning the palladium alloy with an organic solvent.
3 . The method of claim 1 , wherein the annealing is performed at a temperature between about 800° C. and about 900° C.
4 . The method of claim 1 , wherein the palladium alloy exhibits volumetric expansion of no more than 12% on loading and absorption of hydrogen.
5 . The method of claim 1 , wherein the palladium alloy comprises at least 60% palladium.
6 . The method of claim 1 , wherein the palladium alloy comprises at least 90% palladium.
7 . The method of claim 1 , wherein the palladium alloy further comprises at least one of rhodium and yttrium.
8 . The method of claim 1 , wherein the cold working comprises hammering and cold rolling.
9 . The method of claim 1 , wherein the grain size is between about 15 microns and about 40 microns.
10 . The method of claim 1 , wherein the etching is performed with aqua regia.
11 . The method of claim 1 , wherein the inert environment is a vacuum.
12 . The method of claim 1 , wherein the inert environment is an inert gas.
13 . An electrode prepared by a process comprising:
selecting a palladium alloy; annealing the palladium alloy at a first temperature above 350° C.; cold working the palladium alloy into a desired electrode shape; annealing the palladium alloy at a second temperature and for a time sufficient to produce a grain size between about 5 microns and about 100 microns; etching the palladium alloy; rinsing the palladium alloy with at least one of water and heavy water; and storing the palladium alloy in an inert environment.
14 . The electrode produced by the process of claim 13 further comprising cleaning the palladium alloy with an organic solvent.
15 . The electrode produced by the process of claim 13 , wherein the annealing is performed at a temperature between about 800° C. about 900° C.
16 . The electrode produced by the process of claim 13 , wherein the palladium alloy exhibits volumetric expansion of no more than 12% on loading and absorption of hydrogen.
17 . The electrode produced by the process of claim 13 , wherein the palladium alloy comprises at least 60% palladium.
18 . The electrode produced by the process of claim 13 , wherein the palladium alloy comprises at least 90% palladium.
19 . The electrode produced by the process of claim 13 , wherein the palladium alloy further comprises at least one of rhodium and yttrium.
20 . The electrode produced by the process of claim 13 , wherein the cold working comprises hammering and cold rolling.
21 . The electrode produced by the process of claim 13 , wherein the grain size is between about 15 microns and about 40 microns.
22 . The electrode produced by the process of claim 13 , wherein the etching is performed with aqua regia.
23 . The electrode produced by the process of claim 13 , wherein the inert environment is a vacuum.
24 . The electrode produced by the process of claim 13 , wherein the inert environment is an inert gas.Join the waitlist — get patent alerts
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