Semiconductor device

Abstract

A semiconductor device includes a first die pad having a first obverse face oriented in a thickness direction, a semiconductor element having an electrode located on a side to which the first obverse face is oriented in the thickness direction, the semiconductor element being connected to the first obverse face, a conductive material electrically connected to the electrode, and a first bonding layer electrically connecting the conductive material and the electrode. The conductive material includes a main portion, a first connecting portion electrically connected to the electrode via the first bonding layer, a first joint portion connecting the main portion and the first connecting portion, and a distal end portion spaced apart from the first joint portion, and connected to the first connecting portion. As viewed along an in-plane direction of the first obverse face, the distal end portion is inclined so as to be farther from the electrode, in a direction away from the first connecting portion. As viewed along the thickness direction, the electrode includes an expanded region, protruding from the conductive material to an opposite side of the first connecting portion in the in-plane direction, with respect to the distal end portion.

1 . A semiconductor device comprising:
 a first die pad including a first obverse face facing in a thickness direction;   a semiconductor element including an electrode located on a side to which the first obverse face faces in the thickness direction, the semiconductor element being connected to the first obverse face;   a conductive member electrically connected to the electrode; and   a first bonding layer electrically connecting the conductive member and the electrode,   wherein the conductive member includes a main portion, a first connecting portion electrically connected to the electrode via the first bonding layer, a first joint portion connecting the main portion and the first connecting portion, and a distal end portion spaced apart from the first joint portion, and connected to the first connecting portion,   as viewed along an in-plane direction of the first obverse face, the distal end portion is inclined so as to be farther from the electrode in a direction away from the first connecting portion, and   as viewed along the thickness direction, the electrode includes an expanded region, protruding from the conductive member to an opposite side of the first connecting portion in the in-plane direction, with respect to the distal end portion.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the first die pad and the conductive member each contain copper. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the first bonding layer contains tin. 
     
     
         4 . The semiconductor device according to  claim 3 , wherein, as viewed along the in-plane direction, the first bonding layer includes a fillet formed on the electrode so as to reach the conductive member, and inclined with respect to the electrode,
 the fillet includes a first edge in contact with the electrode, and a second edge in contact with the conductive member, and   the first edge is located on an outer side from the second edge, as viewed along the thickness direction.   
     
     
         5 . The semiconductor device according to  claim 4 , wherein the first connecting portion includes a connecting surface opposed to the electrode, and located in contact with the first bonding layer,
 the distal end portion includes a bent surface connected to the connecting surface, and inclined with respect to the connecting surface, and   as viewed in the in-plane direction, an inclination angle defined by the fillet with respect to the electrode is narrower than an inclination angle defined by the bent surface with respect to the connecting surface.   
     
     
         6 . The semiconductor device according to  claim 5 , wherein the second edge is in contact with the bent surface. 
     
     
         7 . The semiconductor device according to  claim 5 , wherein, as viewed along the in-plane direction, the first joint portion is inclined so as to be farther from the first obverse face, in a direction from the first connecting portion toward the main portion. 
     
     
         8 . The semiconductor device according to  claim 7 , wherein the first joint portion includes an inclined surface connected to the connecting surface and inclined with respect to the connecting surface, and
 as viewed along the thickness direction, a boundary between the connecting surface and the inclined surface is located on an inner side of a peripheral edge of the semiconductor element.   
     
     
         9 . The semiconductor device according to  claim 8 , wherein, as viewed along the in-plane direction, an inclination angle defined by the inclined surface with respect to the connecting surface is between 30° and 60°, both ends inclusive. 
     
     
         10 . The semiconductor device according to  claim 3 , wherein a thickness of the first connecting portion is equal to or thinner than twice of a maximum thickness of the first bonding layer. 
     
     
         11 . The semiconductor device according to  claim 1 , wherein a thickness of the first die pad is thicker than a maximum thickness of the conductive member. 
     
     
         12 . The semiconductor device according to  claim 1 , further comprising:
 a second die pad including a second obverse face oriented in a same direction as the first obverse face in the thickness direction, and spaced apart from the first die pad in the in-plane direction; and   a second bonding layer electrically connecting the conductive member and the second obverse face,   wherein the conductive member includes a second connecting portion electrically connected to the second obverse face via the second bonding layer, and a second joint portion connecting between the main portion and the second connecting portion,   the second die pad contains copper, and   the second bonding layer contains tin.   
     
     
         13 . The semiconductor device according to  claim 12 , wherein, as viewed along the in-plane direction, the second joint portion is inclined so as to be farther from the second obverse face, in a direction from the second connecting portion toward the main portion. 
     
     
         14 . The semiconductor device according to  claim 12 , wherein a thickness of the second die pad is thicker than a maximum thickness of the conductive member. 
     
     
         15 . The semiconductor device according to  claim 12 , further comprising a sealing resin covering a part of each of the first die pad and the second die pad, the semiconductor element, and the conductive member,
 wherein the first die pad includes a first reverse face, oriented to an opposite side of the first obverse face in the thickness direction,   the second die pad includes a second reverse face, oriented to an opposite side of the second obverse face in the thickness direction, and   the first reverse face and the second reverse face are exposed from the sealing resin.