Display panel, display device, and preparation method of display panel
Abstract
Provided are a display panel, a display device and a preparation method of a display panel. The display panel includes an array substrate and a light-emitting unit. The array substrate includes a base substrate and an encapsulation layer located on a side of the base substrate, and a side surface of the encapsulation layer facing away from the base substrate is provided with an accommodation groove. The light-emitting unit is located in the accommodation groove, the accommodation groove is filled with a light-absorbing material, a protective film is formed on both a side surface of the encapsulation layer facing away from the base substrate and a side surface of the light-emitting unit facing away from the base substrate, and an etching rate of the protective film is less than an etching rate of the light-absorbing material under a same etching condition.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A display panel, comprising:
an array substrate comprising a base substrate and an encapsulation layer located on a side of the base substrate, wherein a side surface of the encapsulation layer facing away from the base substrate is provided with an accommodation groove; and a light-emitting unit located in the accommodation groove, wherein the accommodation groove is filled with a light-absorbing material, a protective film is formed on both a side surface of the encapsulation layer facing away from the base substrate and a side surface of the light-emitting unit facing away from the base substrate, and an etching rate of the protective film is less than an etching rate of the light-absorbing material under a same etching condition.
2 . The display panel of claim 1 , wherein
the array substrate comprises a light-transmissive region and a light-nontransmissive region, and the light-nontransmissive region comprises a driver circuit region; the array substrate further comprises a thin film transistor (TFT) array layer located between the base substrate and the encapsulation layer, the TFT array layer in the driver circuit region comprises a drive transistor, and the TFT array layer in the driver circuit region comprises a height drop in a direction perpendicular to the base substrate and forms a first side wall; and a light-shielding structure is disposed in the array substrate, the light-shielding structure comprises a first light-shielding segment, and the first light-shielding segment covers at least a part of the first side wall of the TFT array layer.
3 . The display panel of claim 2 , wherein the first light-shielding segment comprises a first side edge and a second side edge away from each other in a first direction, wherein
the first direction is perpendicular to an edge line of a side of the driver circuit region facing towards the light-transmissive region and is parallel to a plane where the first side wall of the TFT array layer is located; and the first side edge extends to a side surface of the TFT array layer facing away from the base substrate, and the second side edge extends to the base substrate.
4 . The display panel of claim 2 , wherein
the TFT array layer comprises a planarization layer, and a side surface of the planarization layer facing away from the base substrate is provided with a groove; the array substrate further comprises a transition region located between the driver circuit region and the light-transmissive region, and a projection of the groove on a plane where the base substrate is located is located in the transition region; and the first side wall of the TFT array layer is also used as an inner wall of the groove, and the groove is filled with a part of the first light-shielding segment.
5 . The display panel of claim 4 , wherein
the groove penetrates through the planarization layer, and a surface of the base substrate is used as a bottom of the groove; and the groove is filled with a part of the first light-shielding segment, and the part of the first light-shielding segment is in contact with the surface of the base substrate; and a sectional shape of the groove on a first plane comprises a bottom edge and two side edges, and the first plane is perpendicular to the plane where the base substrate is located and is perpendicular to an intersection line between the transition region and the light-transmissive region, wherein
the bottom edge is an edge of the sectional shape close to the base substrate, and the two side edges are connected to the bottom edge, respectively; and
an included angle formed by an intersection of extension lines of the two side edges and facing towards the groove ranges from 40° to 80°.
6 . The display panel of claim 4 , wherein the planarization layer is provided with a plurality of grooves, projections of the plurality of grooves on the plane where the base substrate is located extend along an intersection line between the transition region and the light-transmissive region, the plurality of grooves are sequentially arranged in parallel in a second direction, and the second direction intersects an extension direction of the intersection line between the transition region and the light-transmissive region.
7 . The display panel of claim 2 , wherein
the TFT array layer further comprises a drive electrode, an end of the drive transistor is coupled to the drive electrode, the drive electrode is exposed to a side surface of the TFT array layer facing away from the base substrate, a projection of the drive electrode on a plane where the base substrate is located at least partially overlaps with a projection of the accommodation groove on the plane where the base substrate is located, and the light-emitting unit is electrically connected to the drive electrode; the light-shielding structure further comprises a second light-shielding segment, the second light-shielding segment is located on a side of the TFT array layer facing away from the base substrate, and a projection of the second light-shielding segment on the plane where the base substrate is located at least partially overlaps with and at most partially overlaps with a projection of the drive electrode on the plane where the base substrate is located; and the light-shielding structure comprises an electrode opening, and a projection of the electrode opening on the plane where the base substrate is located at least partially overlaps with the projection of the drive electrode on the plane where the base substrate is located.
8 . The display panel of claim 7 , wherein
a plurality of light-emitting units are provided, the plurality of light-emitting units comprise a first color light-emitting unit and a second color light-emitting unit, and a light-emitting brightness of the first color light-emitting unit is greater than a light-emitting brightness of the second color light-emitting unit under a same driving condition; and an electrode opening in a light-shielding structure at a position where the first color light-emitting unit is located is less than an electrode opening in a light-shielding structure at a position where the second color light-emitting unit is located.
9 . The display panel of claim 7 , wherein
the light-nontransmissive region further comprises a wire region, and the TFT array layer in the wire region comprises at least one wire; and the light-shielding structure further comprises a fourth light-shielding segment, the fourth light-shielding segment is located on a side surface of the TFT array layer in the wire region facing away from the base substrate, and a projection of the at least one wire on the plane where the base substrate is located is located in a projection of the fourth light-shielding segment on the plane where the base substrate is located.
10 . The display panel of claim 9 , wherein
the TFT array layer in the wire region comprises a height drop in the direction perpendicular to the base substrate and forms a second side wall; and the light-shielding structure further comprises a fifth light-shielding segment, and the fifth light-shielding segment covers at least a part of the second side wall of the TFT array layer in the wire region.
11 . The display panel of claim 9 , wherein
the wire region is located on at least one side of the light-transmissive region in a third direction, and the driver circuit region is located on at least one side of the light-transmissive region in a fourth direction, wherein the third direction and the fourth direction intersect and are both parallel to the plane where the base substrate is located; and the light-emitting unit is located in the driver circuit region, a plurality of light-emitting units are provided and sequentially arranged in the third direction and constitute a group of light-emitting units, and the driver circuit region comprises at least one group of light-emitting units in the fourth direction.
12 . The display panel of claim 1 , wherein a sectional shape of the accommodation groove on a second plane comprises a bottom edge and two side edges, wherein
the bottom edge is an edge of the sectional shape close to the base substrate, and the two side edges are connected to the bottom edge, respectively; and an included angle formed by an intersection of an extension line of a side edge of the side edges and an extension line of the bottom edge and facing towards the accommodation groove ranges from 80° to 110°.
13 . The display panel of claim 12 , wherein
a plurality of light-emitting units are provided, the plurality of light-emitting units comprise a first color light-emitting unit and a second color light-emitting unit, and a light-emitting brightness of the first color light-emitting unit is greater than a light-emitting brightness of the second color light-emitting unit under a same driving condition; an included angle, which is formed by an intersection of an extension line of a side edge and an extension line of a bottom edge in an accommodation groove where the first color light-emitting unit is located and faces towards the accommodation groove where the first color light-emitting unit is located, is a first included angle, and an included angle, which is formed by an intersection of an extension line of a side edge and an extension line of a bottom edge in an accommodation groove where the second color light-emitting unit is located and faces towards the accommodation groove where the second color light-emitting unit is located, is a second included angle; in a case where the included angle formed by the intersection of the extension line of the side edge and the extension line of the bottom edge and facing towards the accommodation groove is less than or greater than 90°, the first included angle is greater than the second included angle; and in a case where the included angle formed by the intersection of the extension line of the side edge and the extension line of the bottom edge and facing towards the accommodation groove is equal to 90°, a distance between the side edge in the accommodation groove where the first color light-emitting unit is located and the first color light-emitting unit is greater than a distance between the side edge in the accommodation groove where the second color light-emitting unit is located and the second color light-emitting unit.
14 . The display panel of claim 1 , wherein
the array substrate comprises a light-transmissive region and a light-nontransmissive region, and the light-nontransmissive region comprises a driver circuit region; the array substrate further comprises a TFT array layer located between the base substrate and the encapsulation layer, the TFT array layer in the driver circuit region comprises a drive transistor and a drive electrode, an end of the drive transistor is coupled to the drive electrode, and the drive electrode is exposed to a side surface of the TFT array layer facing away from the base substrate; and a plurality of accommodation grooves are provided, the plurality of accommodation grooves comprise a first accommodation groove, the light-emitting unit is located in the first accommodation groove, the first accommodation groove is filled with the light-absorbing material, the light-emitting unit is electrically connected to the drive electrode, and a projection of the drive electrode on a plane where the base substrate is located is located in a projection of the first accommodation groove on the plane where the base substrate is located.
15 . The display panel of claim 14 , wherein
the TFT array layer in the driver circuit region comprises a height drop in a direction perpendicular to the base substrate and forms a first side wall; at least a part of a projection of the first side wall on the plane where the base substrate is located is located in the projection of the first accommodation groove on the plane where the base substrate is located; the plurality of accommodation grooves further comprise a second accommodation groove, and the second accommodation groove is filled with the light-absorbing material; and the light-nontransmissive region further comprises a wire region, the TFT array layer in the wire region comprises at least one wire, and a projection of the at least one wire on the plane where the base substrate is located is located in a projection of the second accommodation groove on the plane where the base substrate is located.
16 . A display device comprising a display panel, wherein the display panel comprises:
an array substrate comprising a base substrate and an encapsulation layer located on a side of the base substrate, wherein a side surface of the encapsulation layer facing away from the base substrate is provided with an accommodation groove; and a light-emitting unit located in the accommodation groove, wherein the accommodation groove is filled with a light-absorbing material, a protective film is formed on both a side surface of the encapsulation layer facing away from the base substrate and a side surface of the light-emitting unit facing away from the base substrate, and an etching rate of the protective film is less than an etching rate of the light-absorbing material under a same etching condition.
17 . A preparation method of a display panel, comprising:
preparing an array substrate, wherein the array substrate comprises a base substrate and an encapsulation layer located on a side of the base substrate, and a side surface of the encapsulation layer facing away from the base substrate is provided with an accommodation groove; bonding a light-emitting unit into the accommodation groove; forming a protective film on both a side surface of the encapsulation layer facing away from the base substrate and a side surface of the light-emitting unit facing away from the base substrate; forming, on a side surface of the encapsulation layer on which the light-emitting unit is bonded facing away from the base substrate, a light-absorbing material layer to enable the accommodation groove to be filled with a light-absorbing material, wherein an etching rate of the protective film is less than an etching rate of the light-absorbing material under a same etching condition; and patterning the light-absorbing material layer to remove the light-absorbing material on the side surface of the encapsulation layer facing away from the base substrate and the side surface of the light-emitting unit facing away from the base substrate.
18 . The preparation method of claim 17 , wherein preparing the array substrate comprises:
forming a thin film transistor (TFT) array layer on a side surface of the base substrate, wherein the array substrate comprises a light-transmissive region and a light-nontransmissive region, the light-nontransmissive region comprises a driver circuit region, the TFT array layer in the driver circuit region comprises a drive transistor, and the TFT array layer comprises a height drop in a direction perpendicular to the base substrate and forms a first side wall; and preparing, on the base substrate on which the TFT array layer is formed, a light-shielding structure, wherein the light-shielding structure comprises a first light-shielding segment, and the first light-shielding segment covers at least a part of the first side wall of the TFT array layer.
19 . The preparation method of claim 18 , wherein the TFT array layer comprises a planarization layer;
wherein before preparing, on the base substrate on which the TFT array layer is formed, the light-shielding structure, the method further comprises:
forming a groove on a side surface of the planarization layer facing away from the base substrate, wherein the array substrate further comprises a transition region located between the driver circuit region and the light-transmissive region, a projection of the groove on a plane where the base substrate is located is located in the transition region, and the first side wall of the TFT array layer is also used as an inner wall of the groove; and
wherein preparing, on the base substrate on which the TFT array layer is formed, the light-shielding structure comprises:
coating, on the base substrate on which the TFT array layer is formed, the light-absorbing material, and filling the groove with at least a part of the light-absorbing material; and
curing the light-absorbing material to form the first light-shielding segment, wherein the groove is filled with a part of the first light-shielding segment.
20 . The preparation method of claim 17 , wherein the protective film is an inorganic protective film; and
wherein forming, on both the side surface of the encapsulation layer facing away from the base substrate and the side surface of the light-emitting unit facing away from the base substrate, the protective film comprises:
forming, by using an inorganic material, on both the side surface of the encapsulation layer facing away from the base substrate and the side surface of the light-emitting unit facing away from the base substrate, the inorganic protective film.Join the waitlist — get patent alerts
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