Ferroelectric material, mems component comprising a ferroelectric material, mems device comprising a first mems component, method of producing a mems component, and method of producing a cmos-compatible mems component

Abstract

A ferroelectric material includes a mixed crystal having AlN and at least one nitride of a transition metal. The proportion of the nitride of the transition metal is selected such that a direction of an initial or spontaneous polarity of the ferroelectric material is switchable by applying a switchover voltage. The switchover voltage is below a breakdown voltage of the ferroelectric material.

1 . Method of producing a MEMS component, comprising:
 stacking a first electrode, a first ferroelectric layer, a second electrode, a second piezoelectric layer and a third electrode in this order, wherein the first ferroelectric layer and the second piezoelectric layer comprise the same direction of polarization and wherein at least the first ferroelectric layer comprises a ferroelectric material comprising   a mixed crystal comprising AlN and at least one nitride of a transition metal;   wherein the proportion of the nitride of the transition metal is selected such that a direction of a polarity of the ferroelectric material is switchable by applying a switchover voltage, the switchover voltage being below a breakdown voltage of the ferroelectric material; and   the method further comprising:   applying a switchover voltage to the first electrode and to the second electrode, wherein the polarization direction of the first ferroelectric layer is reversed, so that the polarization direction of the first ferroelectric layer is reversed.   
     
     
         2 . Method as claimed in  claim 1 ,
 wherein the first electrode, the first ferroelectric layer, the second electrode, the second piezoelectric layer and the third electrode are stacked on a substrate, and   the method further comprising:   integrating one or more circuit components of an integrated circuit using a CMOS process in the substrate before or after stacking the first electrode, the first ferroelectric layer, the second electrode, the second piezoelectric layer and the third electrode.   
     
     
         3 . Method as claimed in  claim 2 , wherein the substrate adjoins either the first electrode or the third electrode.