Methods and systems for matching both dynamic and static parameters in dies, discretes, and/or modules and methods and systems based on the same

Abstract

A device binning and/or matching process includes measuring with a testing device currents and/or voltages of a device with respect to time, determining with the testing device binning and/or matching criteria for the device based on transfer data generated from the device currents and/or the voltages measured with respect to time, and outputting with the testing device the binning and/or matching criteria for the device. A system and power module are also disclosed.

What is claimed is: 
     
         1 . A device binning and/or matching process comprising:
 measuring with a testing device currents and/or voltages of a device with respect to time;   determining with the testing device binning and/or matching criteria for the device based on transfer data generated from the device currents and/or the voltages measured with respect to time; and   outputting with the testing device the binning and/or matching criteria for the device.   
     
     
         2 . The device binning and/or matching process according to  claim 1  further comprising applying with a testing device voltages and/or currents to a device,
 wherein the applying the voltages and/or the currents to the device comprises applying a gate voltage. 
 
     
     
         3 . The device binning and/or matching process according to  claim 1  wherein the measuring the currents and/or voltages with respect to time comprises measuring a turn-on drain current of the device with respect to time. 
     
     
         4 . The device binning and/or matching process according to  claim 1  wherein the measuring the currents and/or voltages with respect to time comprises measuring a gate-source voltage with respect to time. 
     
     
         5 . The device binning and/or matching process according to  claim 1  wherein the measuring the currents and/or the voltages with respect to time comprises measuring a turn-on drain current of the device with respect to time and a gate-source voltage with respect to time. 
     
     
         6 . The device binning and/or matching process according to  claim 1  wherein the transfer data comprises at least one of the following: a device transfer curve, a transfer function, and data representative of an independent scalar input versus a dependent scalar output. 
     
     
         7 . The device binning and/or matching process according to  claim 1  wherein the determining binning and/or matching criteria based on the transfer function comprises a current range. 
     
     
         8 . The device binning and/or matching process according to  claim 1  wherein the determining binning and/or matching criteria further comprises determining secondary device characterization values;
 wherein the secondary device characterization values include at least one of the following: an anticipated implementation location of the device, an anticipated implementation temperature of the device, an anticipated implementation configuration of the device, an anticipated implementation voltage of the device, an anticipated implementation current of the device, an anticipated implementation environment of the device, an anticipated implementation humidity of the device, an anticipated number of the devices implemented, an anticipated implementation location of the device, and an anticipated implementation position of the device; and 
 wherein the determining binning and/or matching criteria is based on the transfer function and the secondary device characterization values. 
 
     
     
         9 . A system configured for device binning and/or matching comprising:
 at least one testing device configured to measure currents and/or voltages of a device with respect to time;   the at least one testing device configured to determine binning and/or matching criteria for the device based on transfer data generated from the device currents and/or the voltages measured with respect to time; and   the at least one testing device configured to output the binning and/or matching criteria for the device based on the transfer data.   
     
     
         10 . The system configured for device binning and/or matching according to  claim 9  wherein an application of the voltages and/or the currents to the device comprises application of a gate voltage. 
     
     
         11 . The system configured for device binning and/or matching according to  claim 9  wherein a measurement of the currents and/or the voltages with respect to time comprises a measurement of a turn-on drain current of the device with respect to time. 
     
     
         12 . The system configured for device binning and/or matching according to  claim 9  wherein a measurement of the currents and/or the voltages with respect to time comprises a measurement of a gate-source voltage with respect to time. 
     
     
         13 . The system configured for device binning and/or matching according to  claim 9  wherein a measurement of the currents and/or the voltages with respect to time comprises a measurement of a turn-on drain current of the device with respect to time and a gate-source voltage with respect to time. 
     
     
         14 . The system configured for device binning and/or matching according to  claim 9  wherein the transfer data comprises at least one of the following: a device transfer curve, a transfer function, and data representative of an independent scalar input versus a dependent scalar output. 
     
     
         15 . The system configured for device binning and/or matching according to  claim 9  wherein a determination of the binning and/or matching criteria based on the transfer data comprises a current range. 
     
     
         16 . The system configured for device binning and/or matching according to  claim 9  wherein a determination of the binning and/or matching criteria further comprises a determination of secondary device characterization values;
 wherein the secondary device characterization values include at least one of the following: an anticipated implementation location of the device, an anticipated implementation temperature of the device, an anticipated implementation configuration of the device, an anticipated implementation voltage of the device, an anticipated implementation current of the device, an anticipated implementation environment of the device, an anticipated implementation humidity of the device, an anticipated number of the devices implemented, an anticipated implementation location of the device, and an anticipated implementation position of the device; and 
 wherein a determination of the binning and/or matching criteria is based on the transfer data and the secondary device characterization values. 
 
     
     
         17 . A process of configuring a power module, comprising:
 providing at least one power substrate;   arranging a housing on the at least one power substrate;   selecting a plurality of power devices based on at least transfer data of the plurality of power devices; and   electrically connecting the plurality of power devices to the at least one power substrate.   
     
     
         18 . The process of configuring a power module of  claim 17 , wherein the selecting the plurality of power devices based on at least the transfer data of the plurality of power devices further comprises:
 applying voltages and/or currents to each of the plurality of power devices;   sweeping or varying application of voltages and/or currents to each of the plurality of power devices;   measuring currents and/or voltages of each of the plurality of power devices with respect to time;   generating the transfer data based on the currents and/or the voltages with respect to time of each of the plurality of power devices;   selecting and comparing at least one operating point of the transfer data of the plurality of power devices; and   determining binning and/or matching criteria for the plurality of power devices based on the transfer data.   
     
     
         19 . The process of configuring a power module of  claim 18  wherein the applying the voltages and/or the currents to each of the plurality of power devices comprises applying a gate voltage. 
     
     
         20 . The process of configuring a power module of  claim 18  wherein the measuring the currents and/or the voltages with respect to time of each of the plurality of power devices comprises measuring a turn-on drain current of each of the plurality of power devices with respect to time. 
     
     
         21 . The process of configuring a power module of  claim 18  wherein the measuring the currents and/or the voltages with respect to time of each of the plurality of power devices comprises measuring a gate-source voltage with respect to time. 
     
     
         22 . The process of configuring a power module of  claim 18  wherein the measuring the currents and/or the voltages with respect to time of each of the plurality of power devices comprises measuring a turn-on drain current of each of the plurality of power devices with respect to time and a gate-source voltage with respect to time of each of the plurality of power devices. 
     
     
         23 . The process of configuring a power module of  claim 18  wherein the transfer data comprises at least one of the following: a device transfer curve, a transfer function, and data representative of an independent scalar input versus a dependent scalar output. 
     
     
         24 . The process of configuring a power module of  claim 18  wherein the determining binning and/or matching criteria based on the transfer data comprises a current range. 
     
     
         25 . The process of configuring a power module of  claim 18  wherein the determining binning and/or matching criteria further comprises determining secondary device characterization values;
 wherein the secondary device characterization values include at least one of the following: an anticipated implementation location of each of the plurality of power devices, an anticipated implementation temperature of each of the plurality of power devices, an anticipated implementation configuration of each of the plurality of power devices, an anticipated implementation voltage of each of the plurality of power devices, an anticipated implementation current of each of the plurality of power devices, an anticipated implementation environment of each of the plurality of power devices, an anticipated implementation humidity of each of the plurality of power devices, an anticipated number of each of the plurality of power devices implemented, an anticipated implementation location of each of the plurality of power devices, and an anticipated implementation position of each of the plurality of power devices; and 
 wherein the determining binning and/or matching criteria is based on the transfer data and the secondary device characterization values.