Biological Device And Biosensing Method Thereof

Abstract

A biological device includes a substrate, a gate electrode, and a sensing well. The substrate includes a source region, a drain region, a channel region, a body region, and a sensing region. The channel region is disposed between the source region and the drain region. The sensing region is at least disposed between the channel region and the body region. The gate electrode is at least disposed on or above the channel region of the substrate. The sensing well is at least disposed adjacent to the sensing region.

What is claimed is: 
     
         1 . A device, comprising:
 a source region and a drain region disposed in a substrate;   a sensing region disposed in the substrate;   a channel region disposed in the substrate and between the source region and the drain region;   a gate dielectric disposed on a first surface of the sensing region and on a first surface of the channel region;   a sensing well disposed on a second surface of the sensing region; and   a gate electrode disposed on a first surface of the gate dielectric and overlapping the sensing region and the channel region.   
     
     
         2 . The device of  claim 1 , wherein an elongated side of the sensing region extends along a first direction and an elongated side of the channel region extends along a second direction that is perpendicular to the first direction. 
     
     
         3 . The device of  claim 1 , wherein the sensing well is overlapping with the sensing region and non-overlapping with the channel region. 
     
     
         4 . The device of  claim 1 , wherein the sensing well is overlapping with the sensing region and the channel region. 
     
     
         5 . The device of  claim 1 , wherein the sensing well is overlapping with the sensing region, the channel region, the source region, and the drain region. 
     
     
         6 . The device of  claim 1 , wherein the sensing region is configured to bind target biomolecules. 
     
     
         7 . The device of  claim 1 , wherein the sensing well is configured to hold a liquid analyte. 
     
     
         8 . The device of  claim 1 , further comprising a buried oxide layer disposed on a second surface of the channel region. 
     
     
         9 . The device of  claim 1 , further comprising a buried oxide layer disposed on the substrate, wherein the sensing well is disposed in the buried oxide layer. 
     
     
         10 . The device of  claim 1 , wherein the gate electrode is H-shaped or T-shaped. 
     
     
         11 . A device, comprising:
 a buried oxide layer disposed on a first surface of a substrate;   a gate dielectric disposed on a second surface of the substrate;   a gate electrode disposed on a first surface of the gate dielectric;   a sensing region disposed in the substrate;   a channel region disposed in the substrate and abutting the sensing region; and   a source region and a drain region disposed in the substrate and abutting the sensing region.   
     
     
         12 . The device of  claim 11 , wherein the sensing region and the channel region are disposed in a T-shaped layout configuration. 
     
     
         13 . The device of  claim 11 , further comprising an other sensing region disposed in the substrate, wherein the source region and the drain region are disposed between the sensing region and the other sensing region. 
     
     
         14 . The device of  claim 13 , wherein the sensing region, the other sensing region, and the channel region are disposed in an H-shaped layout configuration. 
     
     
         15 . The device of  claim 11 , further comprising a sensing well disposed on the sensing region. 
     
     
         16 . The device of  claim 11 , further comprising a sensing well disposed on the sensing region and the channel region. 
     
     
         17 . A method, comprising:
 depositing a gate dielectric on a first surface of a substrate;   depositing a gate electrode on a first surface of the gate dielectric;   forming first and second sensing regions in the substrate and abutting a second surface of the gate dielectric;   forming a channel region in the substrate and abutting the first and second sensing regions; and   forming a source region and a drain region in the substrate and abutting the first and second sensing regions.   
     
     
         18 . The method of  claim 17 , further comprising binding target molecules to the first and second sensing regions. 
     
     
         19 . The method of  claim 17 , further comprising depositing a buried oxide layer on a second surface of the substrate. 
     
     
         20 . The method of  claim 17 , further comprising forming a sensing well on a second surface of the substrate.