Core-Shell InGaN/AlGaN Quantum Nanowire Photonic Structures

Abstract

A nanowire can include a first semiconductor portion, a second portion including a quantum structure disposed on the first portion, and a second semiconductor portion disposed on the second portion opposite the first portion. The quantum structure can include one or more quantum core structures and a quantum core shell disposed about the one or more quantum core structures. The one or more quantum core structures can include one or more quantum disks, quantum arch-shaped forms, quantum wells, quantum dots within quantum wells or combinations thereof.

What is claimed is: 
     
         1 . A method of fabricating a nanowire comprising;
 forming by Selective Area Growth (SAG) a first semiconductor nanowire region with a first type of doping;   forming by SAG a quantum structure on the first semiconductor nanowire region, the quantum structure including one or more quantum core structures and a quantum shell structure disposed about a periphery of the one or more quantum core structures; and   forming by SAG a second semiconductor nanowire region with a second type of doping on the quantum structure.   
     
     
         2 . The method of fabricating the nanowire of  claim 1 , wherein forming by SAG a quantum structure comprises:
 forming by SAG a quantum active region; and   forming by SAG a quantum barrier region on the quantum active region.   
     
     
         3 . The method of fabricating the nanowire of  claim 1 , wherein:
 forming by SAG the quantum active region includes epitaxially depositing Indium Gallium Nitride (InGaN); and   forming by SAG the quantum barrier region includes epitaxially depositing Aluminum Gallium Nitride (AlGaN), wherein the quantum core structure is formed from layers of the Indium Gallium Nitride (InGaN) and the Aluminum Gallium Nitride (AlGaN) and the quantum shell structure is formed from the Aluminum Gallium Nitride (AlGaN).   
     
     
         4 . The method of fabricating the nanowire of  claim 1 , wherein:
 forming by SAG the first semiconductor nanowire region with the first type of doping includes epitaxially depositing n-type doped Gallium Nitride (GaN); and   forming by SAG the second semiconductor nanowire region with the second type of doping includes epitaxially depositing p-type doped Gallium Nitride (GaN).   
     
     
         5 . A method of fabricating a device including one or more clusters of nanowires comprising:
 forming a nano-pattern layer including one or more cluster of openings;   forming a first semiconductor region with a first type of doping disposed in the one or more cluster of openings in the nano-pattern layer;   forming a quantum structure on the first semiconductor region, the quantum structure including one or more quantum core structures and a quantum shell structure disposed about a the one or more quantum core structures; and   forming a second semiconductor region with a second type of doping disposed on the quantum structure.   
     
     
         6 . The method according to  claim 5 , wherein forming the nano-pattern layer comprises:
 depositing a Titanium (Ti) layer on a substrate;   forming a nano-pattern mask on the Ti layer, wherein the nano-pattern mask includes one or more clusters of openings; and   selectively etching the Ti layer exposed by the one or more clusters of opening in the nano-pattern mask.   
     
     
         7 . The method according to  claim 6 , wherein forming the first semiconductor region with the first type of doping comprises epitaxially depositing n-type doped Gallium Nitride (GaN). 
     
     
         8 . The method according to  claim 7 , wherein forming the quantum structure comprises:
 epitaxially depositing one or more layers of Indium Gallium Nitride (InGaN); and   epitaxially depositing one or more layer of Aluminum Gallium Nitride (AlGaN) interleaved between the one or more layers of Indium Gallium Nitride (InGaN) and about a periphery of the one or more layers of Indium Gallium Nitride (InGaN).   
     
     
         9 . The method according to  claim 8 , forming the second semiconductor region with the second type of doping comprises epitaxially depositing p-type doped Gallium Nitride (GaN). 
     
     
         10 . The method according to  claim 9 , further comprising forming a nucleation layer between a substrate and the nano-pattern layer. 
     
     
         11 . The method according to  claim 9 , further comprising:
 depositing an optically transmissive insulator on a substrate between the one or more clusters of nanowires:   forming one or more first contacts on the optically transmissive insulator layer and electrically coupled to the one or more clusters of nanowires; and   forming a second contact on the substrate opposite the one or more clusters of nanowires, wherein the second contact is electrically coupled to the one or more clusters of nanowires through the substrate.   
     
     
         12 . The method according to  claim 5 , wherein the openings in the nano-pattern layer have a hexagonal, square, rectangular, circular, elliptical or polygonal cross-sectional shape. 
     
     
         13 . The method according to  claim 5 , wherein the one or more quantum core structures include a plurality of quantum disks, quantum arch-shaped forms, quantum wells, quantum dots within quantum wells or combinations thereof.