Temperature Control Using Temperature Control Element Coupled to Faraday Shield

Abstract

Plasma processing apparatus and methods are disclosed. In one example implementation, a plasma processing apparatus can include a processing chamber. The apparatus can include a pedestal located in the processing chamber configured to support a workpiece during processing. The apparatus can include a dielectric window forming at least a portion of the processing chamber. The apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma in the processing chamber when energized with RF energy. The apparatus can include a Faraday shield located between the inductive coupling element and the processing chamber. The apparatus can include at least one temperature control element in thermal communication with the Faraday shield.

What is claimed is: 
     
         1 . A plasma processing apparatus, comprising:
 a processing chamber;   a pedestal located in the processing chamber configured to support a workpiece during processing;   a dielectric window forming at least a portion of the processing chamber;   an inductive coupling element located proximate the dielectric window, the inductive coupling element configured to generate a plasma in the processing chamber when energized with radio frequency (RF) energy;   a Faraday shield located between the inductive coupling element and the processing chamber; and   at least one temperature control element in thermal communication with the Faraday shield.   
     
     
         2 . The plasma processing apparatus of  claim 1 , wherein the Faraday shield is located between the inductive coupling element and the dielectric window. 
     
     
         3 . The plasma processing apparatus of  claim 1 , wherein the at least one temperature control element provides a thermally conductive path between the dielectric window and the Faraday shield. 
     
     
         4 . The plasma processing apparatus of  claim 1 , wherein the at least one temperature control element comprises a heating element. 
     
     
         5 . The plasma processing apparatus of  claim 4 , wherein the heating element is a thin film heating element. 
     
     
         6 . The plasma processing apparatus of  claim 5 , wherein the thin film heating element is a polyimide thin film heating element or is a silicon rubber sheet heating element. 
     
     
         7 . The plasma processing apparatus of  claim 4 , wherein the heating element has a shape that at least partially conforms to a shape of the Faraday shield. 
     
     
         8 . The plasma processing apparatus of  claim 7 , wherein the Faraday shield comprises one or more solid metal portions and plurality of leaf elements, each of the plurality of leaf elements coupled to at least one of the one or more solid metal portion via at least one radial spike element, the thin film heating element comprising a plurality of leaf elements, each leaf element coupled to a ring portion via at least one radial spike element. 
     
     
         9 . The plasma processing apparatus of  claim 1 , wherein the apparatus comprises:
 a first set of conductors configured to provide power to the at least one temperature control element; and a second set of conductors, the second set of conductors associated with a temperature sensor configured to generate one or more signals indicative of a temperature associated with the at least one temperature control element.   
     
     
         10 . The plasma processing apparatus of  claim 9 , wherein at least one of the first set of conductors or the second set of conductors pass through a tube element coupled to the Faraday shield. 
     
     
         11 . The plasma processing apparatus of  claim 1 , wherein the apparatus comprises one or more control devices configured to control the delivery of power to the at least one temperature control element based at least in part on one or more signals indicative of the temperature of the Faraday shield. 
     
     
         12 . The plasma processing apparatus of  claim 1 , wherein the at least one temperature control element comprises a first temperature control element disposed on a first portion of the Faraday shield and a second temperature control element disposed on a second portion of the Faraday shield. 
     
     
         13 . The plasma processing apparatus of  claim 12 , wherein the first portion is a central portion and the second portion is a peripheral portion. 
     
     
         14 . The plasma processing apparatus of  claim 12 , wherein the first temperature control element is independently controllable relative to the second temperature control element. 
     
     
         15 . A plasma processing apparatus, comprising:
 a processing chamber;   a pedestal located in the processing chamber configured to support a workpiece during processing;   a dielectric window forming at least a portion of the processing chamber;   an inductive coupling element located proximate the dielectric window, the inductive coupling element configured to generate a plasma in the processing chamber when energized with radio frequency (RF) energy;   a Faraday shield located between the inductive coupling element and the dielectric window; and   at least one heating element in thermal communication with the Faraday shield.   
     
     
         16 . The plasma processing apparatus of  claim 15 , wherein the at least one heating element comprises a first heating element disposed on a first portion of the Faraday shield and a second heating element disposed on a second portion of the Faraday shield, the first heating element and the second heating element being independently controllable. 
     
     
         17 . The plasma processing apparatus of  claim 16 , wherein the first portion comprises a peripheral portion of the Faraday shield and the second portion comprises a center portion of the Faraday shield. 
     
     
         18 . The plasma processing apparatus of  claim 16 , wherein the apparatus comprises a power source configured to independently provide power to the first heating element and the second heating element. 
     
     
         19 . The plasma processing apparatus of  claim 16 , wherein the apparatus comprises one or more control devices, the one or more control devices configured to receive one or more signals indicative of a temperature associated with a first heating zone and one or more signals indicative of a temperature associated with the second heating zone, wherein the one or more control devices are configured to control power to the first heating element and the second heating element based at least in part on the one or more signals indicative of a temperature associated with the first heating zone and the one or more signals indicative of a temperature associated with a second heating zone. 
     
     
         20 . A plasma processing apparatus, comprising:
 a processing chamber;   a pedestal located in the processing chamber configured to support a workpiece during processing;   a dielectric window forming at least a portion of the processing chamber;   an inductive coupling element located proximate the dielectric window, the inductive coupling element configured to generate a plasma in the processing chamber when energized with radio frequency (RF) energy;   a Faraday shield located between the inductive coupling element and the dielectric window;   at least one heating element in thermal communication with the Faraday shield; and   one or more control devices configured to control delivery of power to the at least one heating element based at least in part on one or more signals from a temperature sensor.