US2023417458A1PendingUtilityA1

Improved reagent for thermal machine

Assignee: SOFRIGAM SAPriority: Oct 22, 2020Filed: Oct 22, 2021Published: Dec 28, 2023
Est. expiryOct 22, 2040(~14.3 yrs left)· nominal 20-yr term from priority
F25B 17/08B01J 20/0222B01J 20/0288B01J 20/20B01J 20/28011B01J 20/28019B01J 20/28042B01J 20/3035B01J 20/3078Y02A30/27
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Claims

Abstract

The disclosed subject matter relates to a reactive matrix for the sorption/desorption of a heat transfer fluid (FG) in a reactor of a cold production device, this matrix comprising a compacted mixture of sorbent, of the manganese chloride monohydrate type, and expanded natural graphite in a preferred proportion of 79/21. The disclosed subject matter also relates to a method for manufacturing a wafer from this matrix and a reactor comprising a stack of such wafers.

Claims

exact text as granted — not AI-modified
1 . A reactive matrix for the sorption/desorption of a heat transfer fluid (FG) in a reactor of a cold production device, wherein the matrix comprises a mixture of sorbent and expanded natural graphite (ENG). 
     
     
         2 . The matrix according to  claim 1 , wherein the sorbent is a salt selected from manganese chloride, calcium chloride, barium chloride or nickel chloride. 
     
     
         3 . The matrix according to  claim 1 , wherein the sorbent grain size is between 25 and 150 micrometers. 
     
     
         4 . The matrix according to  claim 1 , wherein the matrix comprises a proportion of sorbent of between 76% and 87% of the mass of sorbent material, with the ENG forming substantially the rest of the complement. 
     
     
         5 . The matrix according to  claim 1 , wherein the matrix is compacted such that the apparent mass of the ENG is between 80 kg/m 3  and 130 kg/m 3 . 
     
     
         6 . A reactive wafer consisting of a compact matrix according to  claim 1 . 
     
     
         7 . The wafer according to  claim 6 , wherein the wafter shape is cylindrical about an axis (X) and in that the wafter comprises a substantially coaxial interior passage. 
     
     
         8 . The wafer according to  claim 7 , wherein:
 the wafter has an outer diameter between 40 mm and 200 mm;   the passage  [ZP1]  has a minimum diameter of between 17 mm and 23 mm; and,   the wafter Chas a substantially constant axial thickness of between 40 mm and 50 mm.   
     
     
         9 . A method for manufacturing a wafer consisting of a compact matrix comprising a mixture of sorbent and expanded natural graphite (ENG), wherein the sorbent comprises manganese chloride hydrate, further comprising a prior drying to obtain a manganese chloride salt of water content less than 0.1 moles per mole of salt. 
     
     
         10 . The method according to  claim 9 , further comprising mixing the manganese chloride monohydrate with the expanded natural graphite in chosen proportions and of compacting said mixture. 
     
     
         11 . A method for manufacturing a reactor, further comprising arranging one or more wafers manufactured according to  claim 10 , in an envelope of the reactor. 
     
     
         12 . The method according to  claim 11 , further comprising an additional drying by creating a vacuum in the envelope and by heating the envelope to a temperature close to 180° C., to extract water from the salt monohydrate. 
     
     
         13 . The method according to  claim 9 , wherein the compacting further comprises using a piston, that is substantially cylindrical about a pistoning axis and which comprises a front surface, substantially flat and perpendicular to said pistoning axis, and a head which extends axially from said surface, said head comprising a substantially cylindrical distal part and a flared connection which connects said distal part to the front surface, said connection forming a quarter of a circle.

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