Microelectronic workpiece processing systems and associated methods of color correction

Abstract

Several embodiments of semiconductor systems and associated methods of color corrections are disclosed herein. In one embodiment, a method for producing a light emitting diode (LED) includes forming an (LED) on a substrate, measuring a base emission characteristic of the formed LED, and selecting a phosphor based on the measured base emission characteristic of the formed LED such that a combined emission from the LED and the phosphor at least approximates white light. The method further includes introducing the selected phosphor onto the LED via, for example, inkjet printing.

We claim: 
     
         1 . A light emitting diode (LED) system, comprising:
 a substrate;   a plurality of LEDs carried by the substrate, each of the plurality of LEDs having a base emission characteristic; and   a plurality of converters, each disposed over a corresponding one of the plurality of LEDs,   wherein the base emission characteristic of a first LED of the plurality differs from the base emission characteristic of a second LED of the plurality,   wherein a first converter of the plurality that corresponds to the first LED comprises a different composition, a different concentration, and/or a different quantity of a phosphor than comprised by a second converter of the plurality that corresponds to the second LED, such that a compensated emission of the first LED passing through the first converter and a compensated emission of the second LED passing through the second converter each more closely approximate a black body emission for a predetermined color temperature than do the base emission characteristics for the first and second LEDs.   
     
     
         2 . The LED system of  claim 1 , wherein the base emission characteristic of the first LED includes an emission peak at a first wavelength, wherein the phosphor of the first converter includes an emission peak at a second wavelength, and wherein a line drawn from the first wavelength to the second wavelength on a chromaticity curve intersects a black body curve at about the predetermined color temperature. 
     
     
         3 . The LED system of  claim 2 , wherein the base emission characteristic of the second LED includes an emission peak at a third wavelength different than the first wavelength, wherein the phosphor of the second converter includes an emission peak at a fourth wavelength different form the second wavelength, and wherein a line drawn from the third wavelength to the fourth wavelength on the chromaticity curve intersects the black body curve at the predetermined color temperature. 
     
     
         4 . The LED system of  claim 1 , wherein at least one of the first and second converter includes a plurality of phosphors. 
     
     
         5 . The LED system of  claim 1 , wherein the plurality of LEDs are formed in a common semiconductor material of the substrate. 
     
     
         6 . The LED system of  claim 1 , wherein the LEDs comprise InGaN. 
     
     
         7 . A light emitting diode (LED) system, comprising:
 a substrate;   a plurality of LEDs carried by the substrate, each of the plurality of LEDs having a base emission characteristic; and   a plurality of converters, each disposed over a corresponding one of the plurality of LEDs,   wherein the base emission characteristic of a first LED of the plurality differs from the base emission characteristic of a second LED of the plurality,   wherein a first converter of the plurality that corresponds to the first LED comprises a different composition, a different concentration, and/or a different quantity of a phosphor than comprised by a second converter of the plurality that corresponds to the second LED, such that a combination of (i) a compensated emission of the first LED passing through the first converter and (ii) a compensated emission of the second LED passing through the second converter together approximate a black body emission for a predetermined color temperature.   
     
     
         8 . The LED system of  claim 7 , wherein the base emission characteristic of the first LED includes an emission peak at a first wavelength, wherein the phosphor of the first converter includes an emission peak at a second wavelength, and wherein a line drawn from the first wavelength to the second wavelength on a chromaticity curve intersects a black body curve at a higher color temperature than the predetermined color temperature. 
     
     
         9 . The LED system of  claim 8 , wherein the base emission characteristic of the second LED includes an emission peak at a third wavelength different than the first wavelength, wherein the phosphor of the second converter includes an emission peak at a fourth wavelength different form the second wavelength, and wherein a line drawn from the third wavelength to the fourth wavelength on the chromaticity curve intersects the black body curve at a lower temperature than the predetermined color temperature. 
     
     
         10 . The LED system of  claim 7 , wherein at least one of the first and second converter includes a plurality of phosphors. 
     
     
         11 . The LED system of  claim 7 , wherein the plurality of LEDs are formed in a common semiconductor material of the substrate. 
     
     
         12 . The LED system of  claim 7 , wherein the LEDs comprise InGaN.