Laser Module for Optical Data Communication System within Silicon Interposer

Abstract

An interposer device includes a substrate that includes a laser source chip interface region, a silicon photonics chip interface region, an optical amplifier module interface region. A fiber-to-interposer connection region is formed within the substrate. A first group of optical conveyance structures is formed within the substrate to optically connect a laser source chip to a silicon photonics chip when the laser source chip and the silicon photonics chip are interfaced to the substrate. A second group of optical conveyance structures is formed within the substrate to optically connect the silicon photonics chip to an optical amplifier module when the silicon photonics chip and the optical amplifier module are interfaced to the substrate. A third group of optical conveyance structures is formed within the substrate to optically connect the optical amplifier module to the fiber-to-interposer connection region when the optical amplifier module is interfaced to the substrate.

1 . A system, comprising:
 an interposer device including a socket formed within an upper region of the interposer device, the interposer device including a first optical waveguide exposed within the socket; and   a laser source chip disposed within the socket such that a second optical waveguide within the laser source chip is optically coupled to the first optical waveguide within the interposer device.   
     
     
         2 . The system as recited in  claim 1 , wherein the upper region of the interposer device includes passive photonic layers, the socket formed through the passive photonic layers. 
     
     
         3 . The system as recited in  claim 1 , wherein the upper region of the interposer device includes a nitride layer that is exposed within the socket. 
     
     
         4 . The system as recited in  claim 3 , wherein the laser source chip includes bonding shoulders configured to interface and bond with the nitride layer exposed within the socket. 
     
     
         5 . The system as recited in  claim 4 , wherein the bonding shoulders are revealed portions of an epitaxial layer within the laser source chip. 
     
     
         6 . The system as recited in  claim 5 , wherein a vertical position of the nitride layer within the interposer device and a vertical position of the epitaxial layer within the laser source chip are collectively controlled to provide for optical alignment of the second optical waveguide within the laser source chip with the first optical waveguide within the interposer device. 
     
     
         7 . The system as recited in  claim 3 , wherein the nitride layer is vertically separated from the first optical waveguide within the interposer device by at least 6.75 micrometers. 
     
     
         8 . The system as recited in  claim 1 , wherein the interposer device includes a first plurality of electrically conductive connection structures disposed at a bottom of the socket, and wherein the laser source chip includes a second plurality of electrically conductive connection structures arranged to electrically connect with the first plurality of electrically conductive connection structures when the laser source chip is disposed within the socket. 
     
     
         9 . The system as recited in  claim 8 , wherein the first plurality of electrically conductive connection structures is soldered to the second plurality of electrically conductive connection structures. 
     
     
         10 . The system as recited in  claim 8 , wherein the laser source chip includes a first epitaxial layer, a second epitaxial layer formed on the first epitaxial layer, and a third epitaxial layer formed on the second epitaxial layer. 
     
     
         11 . The system as recited in  claim 10 , wherein a portion of the first epitaxial layer is an N-type structure of a PIN diode, wherein a portion of the second epitaxial layer is an intrinsic structure of the PIN diode, and wherein a portion of the third epitaxial layer is a P-type structure of the PIN diode. 
     
     
         12 . The system as recited in  claim 11 , wherein the P-type portion of the PIN diode is electrically connected to one of the second plurality of electrically conductive connection structures of the laser source chip. 
     
     
         13 . The system as recited in  claim 12 , wherein the laser source chip includes a plurality of PIN diodes, said PIN diode being one of the plurality of PIN diodes, wherein each of the plurality of PIN diodes includes a respective N-type structure formed of a respective portion of the first epitaxial layer, wherein each of the plurality of PIN diodes includes a respective intrinsic structure formed of a respective portion of the second epitaxial layer, and wherein each of the plurality of PIN diodes includes a respective P-type structure formed of a respective portion of the third epitaxial layer. 
     
     
         14 . The system as recited in  claim 13 , wherein the laser source chip includes a dielectric planarization layer disposed between the plurality of PIN diodes. 
     
     
         15 . The system as recited in  claim 14 , wherein the P-type portion of each of the plurality of PIN diodes is electrically connected to a respective one of the second plurality of electrically conductive connection structures of the laser source chip. 
     
     
         16 . The system as recited in  claim 1 , wherein the interposer device includes a silicon substrate. 
     
     
         17 . The system as recited in  claim 16 , wherein the silicon substrate has a vertical thickness of at least 100 micrometers. 
     
     
         18 . The system as recited in  claim 1 , further comprising:
 an optical amplifier module connected to the interposer device.   
     
     
         19 . The system as recited in  claim 18 , wherein the interposer device includes a fiber-to-interposer connection region. 
     
     
         20 . The system as recited in  claim 19 , wherein the first optical waveguide is configured to extend from the fiber-to-interposer connection region to one or more of the optical amplifier module and the laser source chip.