Method and Device for Producing a SiC Solid Material

Abstract

The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 μm/h, where a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and where the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1700° C.g. 1)

1 . Method for producing a preferably elongated SiC solid, in particular of polytype 3C,
 at least comprising the steps of:   Introducing at least a first source gas into a process chamber, said first source gas comprising Si,   introducing at least a second source gas into the process chamber, the second source gas comprising C,   electrically energizing at least one separator element disposed in the process chamber to heat the separator element,   setting a deposition rate of more than 200 μm/h,   wherein a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and   wherein the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1700° C.   
     
     
         2 . Method according to  claim 1 ,
 characterized by the step of   Introducing at least one carrier gas into the process chamber, the carrier gas preferably comprising H.   
     
     
         3 . Method for producing a preferably elongated SiC solid, in particular of polytype 3C,
 comprising at least the steps of:   introducing at least one source gas, in particular a first source gas, in particular SiCl3(CH3), into a process chamber, the source gas comprising Si and C,   introducing at least one carrier gas into the process chamber, the carrier gas preferably comprising H,   electrically energizing at least one separator element disposed in the process chamber to heat the separator element,   setting a deposition rate of more than 200 μm/h,   wherein a pressure of more than 1 bar is generated in the process chamber by the introduction of the source gas and/or the carrier gas, and   wherein the surface of the deposition element is heated to a temperature in the range between 1300° C. and 1700° C.   
     
     
         4 . Method according to  claim 1 ,
 characterized in that   a pressure in the process chamber of between 2 bar and 10 bar is generated by introducing the first source gas and/or the second source gas, preferably a pressure in the process chamber of between 4 bar and 8 bar is generated by introducing the first source gas and/or the second source gas, particularly preferably a pressure in the process chamber of between 5 bar and 7 bar, in particular of 6 bar, is generated by introducing the first source gas and/or the second source gas.   
     
     
         5 . Method according to  claim 1 ,
 characterized in that   the surface of the deposition element is heated to a temperature in the range between 1450° C. and 1700° C., in particular to a temperature in the range between 1500° C. and 1600° C.   
     
     
         6 . Method according to  claim 1 ,
 characterized in that   the first source gas is introduced into the process chamber via a first supply means, and the second source gas is introduced into the process chamber via a second supply means,   or the first source gas and the second source gas are mixed before being introduced into the process chamber and are introduced into the process chamber via a supply device,   wherein the source gases are introduced into the process chamber in a molar ratio Si:C of Si=1 and C=0.8 to 1.1 and/or an atomic ratio Si:C of Si=1 and C=0.8 to 1.1.   
     
     
         7 . Method according to  claim 6 ,
 characterized in that   the carrier gas comprises H   wherein the source gases and the carrier gas are introduced into the process chamber in a molar ratio Si:C:H of Si=1 and C=0.8 to 1.1 and H=2-10, in particular in a molar ratio Si:C:H of Si=1 and C=0.9 to 1 and H=3-5, and/or an atomic ratio Si:C:H of Si=1 and C=0.8 to 1.1 and H=2-10, in particular in an atomic ratio Si:C:H of Si=1 and C=0.9 to 1 and H=3-5.   
     
     
         8 . Method according to  claim 1 ,
 characterized in that   the deposition rate is set in the range between 300 μm/h and 2500 μm/h, in particular in the range between 350 μm/h and 2300 μm/h, in particular in the range between 400 μm/h and 2000 μm/h, in particular in the range between 450 μm/h and 1800 μm/h.   
     
     
         9 . Method according to  claim 1 ,
 characterized in that   the surface temperature of the deposition element is detected by a temperature measuring device, in particular a pyrometer, the temperature measuring device outputting a temperature signal and/or temperature data, and   a control device modifies, in particular increases, the electrical loading of the separator element as a function of the temperature signal and/or the temperature data.   
     
     
         10 . Method according to  claim 9 ,
 characterized in that   the temperature measuring device carries out temperature measurements at time intervals of less than 5 minutes, in particular less than 3 minutes or less than 2 minutes or less than 1 minute or less than 30 seconds, and outputs temperature signal and/or temperature data,   wherein a target temperature is defined,   wherein the control device controls an increase in the electrical application as soon as the temperature signal and/or the temperature data re-present a surface temperature which is lower than a defined threshold temperature, wherein the threshold temperature is a temperature which is lower than the set temperature by a defined value, the defined value preferably being less than 10° C. or less than 5° C. or less than 3° C. or less than 2° C. or less than 1.5° C. or less than 1° C.   
     
     
         11 . Method according to  claim 1 ,
 characterized in that   more of the source gas, in particular the first source gas and/or the second source gas, is introduced into the process chamber continuously or stepwise, in particular in a defined ratio, per unit time,   preferably more of the source gas, in particular the first source gas and/or the second source gas, is introduced into the process chamber as a function of time, and/or more of the source gas, in particular the first source gas and/or the second source gas, is introduced into the process chamber as a function of the electrical loading.   
     
     
         12 . Device for producing a preferably elongated SiC solid, in particular of polytype 3C, in particular for carrying out a previously mentioned process, comprising at least
 a process chamber for receiving an electrically chargeable deposition element, a first source gas, the first source gas comprising Si, a second source gas into the process chamber, the second source gas comprising C,   a first supply means and/or a second supply means for supplying the first source gas and/or the second source gas with a pressure of more than 1 bar into the process chamber,   a temperature measuring device for measuring the surface temperature of the deposition element,   a control device for setting a deposition rate of more than 200 μm/h,   wherein from the control means the electrical application of the deposition element is adjustable, wherein the electrical application for generating a surface temperature is adjustable from 1300° C. and 1700° C.   
     
     
         13 . Device for producing a preferably elongated SiC solid, in particular of polytype 3C, in particular for carrying out a previously mentioned process, comprising at least
 a process chamber for receiving an electrically chargeable deposition element, at least one source gas, in particular SiCl3(CH3), the source gas comprising Si and C, and a carrier gas into the process chamber, the carrier gas preferably comprising H,   a first feeding device and/or a second feeding device for feeding the source gas and/or the carrier gas with a pressure of more than 1 bar into the process chamber,   a temperature measuring device for measuring the surface temperature of the deposition element,   a control device for setting a deposition rate of more than 200 μm/h,   wherein from the control means the electrical application to the deposition element is adjustable, wherein the electrical application is adjustable to produce a surface temperature of 1300° C. and 1700° C.   
     
     
         14 . SiC solid state material, in particular 3C-SiC solid state material, having a purity excluding at least 99.9999% (ppm wt) of the substances B, Al, P, Ti, V, Fe, Ni and/or a density of less than 3.21 g/cm3,
 produced by a method according to  claim 1 .   
     
     
         15 . Use of the SiC solid state material according to  claim 14  in a PVT reactor for the production of monocrystalline SiC.