US2024044846A1PendingUtilityA1

Microfabricated ultrasonic transducers and related apparatus and methods

87
Assignee: BFLY OPERATIONS INCPriority: Jul 14, 2014Filed: Oct 20, 2023Published: Feb 8, 2024
Est. expiryJul 14, 2034(~8 yrs left)· nominal 20-yr term from priority
H10W 72/5453G01N 29/2406B81C 1/00238B06B 1/0292A61B 8/4483B81B 7/007B81C 1/00301H01L 2924/0002H01L 2924/146H01L 2924/1461H01L 2224/4813B81C 2203/0792B81C 2201/019B81B 2201/0271B81C 2203/036
87
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Claims

Abstract

An ultrasound device includes: ultrasonic transducer cavities; a membrane comprising a silicon layer that seals the ultrasonic transducer cavities; electrode regions configured to control vibration of the membrane; and a complementary metal-oxide-semiconductor (CMOS) substrate including integrated circuitry that is electrically coupled to the electrode regions. The ultrasonic transducer cavities are disposed between the membrane and the integrated circuitry along a vertical direction of the ultrasound device.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An ultrasound device, comprising:
 ultrasonic transducer cavities;   a membrane comprising a silicon layer that seals the ultrasonic transducer cavities;   electrode regions configured to control vibration of the membrane; and   a complementary metal-oxide-semiconductor (CMOS) substrate including integrated circuitry that is electrically coupled to the electrode regions,   wherein the ultrasonic transducer cavities are disposed between the membrane and the integrated circuitry along a vertical direction of the ultrasound device.   
     
     
         2 . The ultrasound device of  claim 1 , further comprising:
 isolation regions disposed between the electrode regions of adjacent ultrasound transducer cavities when viewed in the vertical direction,   wherein the isolation regions are doped.   
     
     
         3 . The ultrasound device of  claim 1 , further comprising:
 an embedded electrical contact between the CMOS substrate and an engineered substrate that includes the ultrasonic transducer cavities,   wherein ends of the embedded electrical contact directly connect:
 a bond point between the CMOS substrate and the engineered substrate; and 
 an electrical contact disposed on the membrane. 
   
     
     
         4 . The ultrasound device of  claim 3 ,
 wherein the embedded electrical contact protrudes though the engineered substrate along the vertical direction.   
     
     
         5 . The ultrasound device of  claim 4 ,
 wherein the embedded electrical contact protrudes though the membrane along the vertical direction.

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