Continuous annealer for wire

Abstract

A continuous annealer for wire is disclosed, and specifically for annealing and recrystallizing a wire in a continuous process. The continuous annealer for wire comprises: two contact discs for contacting a first wire portion extending therebetween; an annealing zone situated between the two contact discs; and annealing means for annealing the first wire portion in the annealing zone, as a result of which a first partial recrystallisation process in the first wire portion takes place in the annealing zone. A recrystallisation zone is situated downstream of the second contact disc, wherein, downstream of the annealing zone, the first wire portion passes through the recrystallisation zone as the second wire portion, and a second partial recrystallisation process takes place in the second wire portion. The wire has the opportunity to recrystallize further after leaving the annealing zone without further heating. By extending the recrystallisation time, the recrystallisation temperature can be reduced accordingly. As a result, the same degree of recrystallisation can be achieved overall with a significantly lower input of energy than when the wire is cooled immediately after leaving the annealing zone.

1 . A continuous annealer for wire for annealing and recrystallizing an in particular metallic wire in a continuous process which comprises:
 at least two contact disks which are configured such that a first contact disk contacts a rear end, seen in the wire's direction of travel, and a second contact disk contacts a front end, seen in the wire's direction of travel, of a first wire portion extending between the first contact disk and the second contact disk,   an annealing zone situated between the first contact disk and the second contact disk which is configured such that the first wire portion passes through the annealing zone, as well as   annealing means for annealing the first wire portion in the annealing zone, whereby a first partial recrystallization process takes place in the first wire portion in the annealing zone,   wherein   
       a recrystallization zone is situated downstream of the second contact disk, seen in the wire's direction of travel, which is configured such that a second wire portion, which has previously passed through the annealing zone as a first wire portion, passes through the recrystallization zone and that a second partial recrystallization process takes places in the second wire portion. 
     
     
         2 . The continuous annealer for wire according to  claim 1 , wherein the annealing means are means for conductively heating the first wire portion, wherein the first contact disk and the second contact disk are configured to respectively feed or discharge an electric current into or from the first wire portion. 
     
     
         3 . The continuous annealer for wire according to  claim 1 , wherein the annealing means are means for inductively heating the first wire portion. 
     
     
         4 . The continuous annealer for wire according to  claim 1 , the wherein the crystallization zone is configured to dispose the second wire portion under a protective gas. 
     
     
         5 . The continuous annealer for wire according to  claim 1 , wherein it has no cooling device for the wire between the annealing zone and the recrystallization zone. 
     
     
         6 . The continuous annealer for wire according to  claim 1 , wherein it has a cooling device for cooling the second contact disk. 
     
     
         7 . The continuous annealer for wire according to  claim 6 , wherein the cooling device for cooling the second contact disk comprises means for spraying the second contact disk with a cooling medium, particularly an emulsion or oil. 
     
     
         8 . The continuous annealer for wire according to  claim 1 , wherein a cooling zone and/or a cooling basin is/are situated downstream of the recrystallization zone seen in the wire's direction of travel, and configured such that a third wire portion, which has previously passed through the recrystallization zone as a second wire portion, passes through the cooling zone and/or the cooling basin and is cooled therein by a cooling medium. 
     
     
         9 . The continuous annealer for wire according to  claim 8 , wherein it comprises the cooling zone and that the cooling zone has means for spraying the third wire portion with a cooling medium, particularly an emulsion or oil. 
     
     
         10 . The continuous annealer for wire according to  claim 9 , wherein the cooling zone comprises at least one apparatus for regulating the volumetric flow of the cooling medium in the cooling zone, wherein the apparatus in particular has at least one valve for introducing cooling medium into the cooling zone and the at least one valve is adjustable and in particular designed as a proportional valve. 
     
     
         11 . A method for annealing and recrystallizing a wire in a continuous process in a continuous annealer for wire according to  claim 1 , wherein a first wire portion passes through the annealing zone, is annealed there and a first partial recrystallization process thereby takes place in the first wire portion as well as that a second wire portion, which has previously passed through the annealing zone as a first wire portion, passes through the recrystallization zone and a second partial recrystallization process thereby takes place in the second wire portion. 
     
     
         12 . The method of  claim 11 , wherein the wire is metal.