Power module

Abstract

A power module. The power module includes a first circuit carrier having power conductor structures, and a second circuit carrier in parallel therewith and having at least one further power conductor structure electrically connected at an internal contact region via a spacer element, which forms a first electrically symmetrical current star point, to an internal contact region of one of the power conductor structures. A control signal conductor structure is on a second side of the second circuit carrier. Semiconductor switches are arranged and electrically contacted between the first circuit carrier and the second circuit carrier. Control connections of the semiconductor switches are electrically connected to the control signal conductor structure. A common conductor structure is arranged on the second side of the second circuit carrier. Control connections of the semiconductor switches are electrically connected to the common conductor structure.

1 - 14 . (canceled) 
     
     
         15 . A power module, comprising:
 a first circuit carrier; and   at least one second circuit carrier, wherein the first circuit carrier has on a first side a plurality of power conductor structures arranged on an electrically insulating layer, wherein the at least one second circuit carrier is arranged spatially in parallel with the first circuit carrier and has, on a first side facing the first side of the first circuit carrier, at least one further power conductor structure arranged on an electrically insulating layer, wherein the at least one further power conductor structure of the at least one second circuit carrier is electrically connected at an internal contact region via a spacer element, which forms a first electrically symmetrical current star point, to an internal contact region of one of the power conductor structures of the first circuit carrier, wherein at least one control signal conductor structure is arranged on the electrically insulating layer on a second side of the at least one second circuit carrier, wherein at least two semiconductor switches with power connections are arranged and electrically contacted between another of the conductor structures of the first circuit carrier and the at least one further power conductor structure of the at least one second circuit carrier, wherein control connections of the at least two semiconductor switches are electrically connected to the at least one control signal conductor structure of the at least one second circuit carrier, wherein a common conductor structure is arranged on the electrically insulating layer on the second side of the at least one second circuit carrier, wherein control connections of the at least two semiconductor switches configured as Kelvin source connections are electrically connected to the common conductor structure, wherein the at least one second circuit carrier is situated in such a way that a second electrically symmetrical current star point, which corresponds to a geometric center of the common conductor structure, at least partially overlaps with the spacer element and the electrically symmetrical first current star point.   
     
     
         16 . The power module according to  claim 15 , wherein the power conductor structures arranged on the first side of the first circuit carrier form a first power level, in which external contact regions of the power conductor structures are arranged, wherein the at least one further power conductor structure arranged on the first side of the at least one second circuit carrier forms a second power level. 
     
     
         17 . The power module according to  claim 15 , wherein the at least one control signal conductor structure arranged on the second side of the at least one second circuit carrier forms a signal level. 
     
     
         18 . The power module according to  claim 15 , wherein the first circuit carrier has at least one thermal interface on a second side, wherein the at least one thermal interface can be contacted with a cooling device. 
     
     
         19 . The power module according to  claim 18 , wherein an encasement completely encloses the power module, leaving the at least one thermal interface exposed, wherein the encasement has at least one recess in a region of external contact regions of the first circuit carrier and in a region of external contact regions of the at least one second circuit carrier. 
     
     
         20 . The power module according to  claim 18 , wherein at least one recess between internal contact regions for the at least two semiconductor switches is introduced into the at least one further power conductor structure of the at least one second circuit carrier. 
     
     
         21 . The power module according to  claim 20 , wherein the at least one recess is a T-shaped structure. 
     
     
         22 . The power module according to  claim 17 , wherein hat, on the second side of the at least one second circuit carrier, at least one measuring signal conductor structure is arranged on the electrically insulating layer as part of the signal level. 
     
     
         23 . The power module according to  claim 22 , wherein an internal contact region of a first measuring signal conductor structure of the at least one second circuit carrier is electrically connected to one of the power conductor structures of the first circuit carrier via a connecting line, wherein an external contact region of the first measurement signal conductor structure of the at least one second circuit carrier provides a power measurement point via a spacer element. 
     
     
         24 . The power module according to  claim 23 , wherein an internal contact region of a second measuring signal conductor structure of the at least one second circuit carrier is electrically connected to a first connection of a temperature sensor, the second connection of which is electrically connected to an internal contact region of the common conductor structure of the at least one second circuit carrier, wherein an external contact region of the second measurement signal conductor structure provides a temperature measurement signal. 
     
     
         25 . The power module according to  claim 15 , wherein at least one first conductor structure of the first circuit carrier can be contacted via at least one external contact region with a positive supply connection, and at least one second conductor structure of the first circuit carrier can be contacted via at least one external contact region with a negative supply connection, and at least one third conductor structure of the first circuit carrier can be contacted via at least one external contact region with a load connection. 
     
     
         26 . The power module according to  claim 25 , wherein at least two semiconductor switches each form a high-side switch of the power module and are arranged and electrically contacted with power connections between the at least one first conductor structure of the first circuit carrier and the at least one further power conductor structure of a second circuit carrier, wherein control connections of the high-side switches configured as gate connections are each electrically connected to a control signal conductor structure of the second circuit carrier, wherein the at least one further power conductor structure of the second circuit carrier is electrically connected to an internal contact region of a third power conductor structure of the first circuit carrier at the internal contact region. 
     
     
         27 . The power module according to  claim 26 , wherein at least two semiconductor switches each form a low-side switch of the power module and are electrically arranged and electrically contacted with power connections between the at least one second conductor structure of the first circuit carrier and at least one further power conductor structure of a further second circuit carrier, wherein control connections of the low-side switches configured as gate connections are each electrically connected to a control signal conductor structure of the further second circuit carrier, wherein the at least one further power conductor structure of the further second circuit carrier is electrically connected to an internal contact region of a second power conductor structure of the first circuit carrier at the internal contact region. 
     
     
         28 . The power module according to  claim 15 , wherein the first circuit carrier and/or the at least one second circuit carrier is an active metal braze (AMB) substrate or a direct bonded copper (DBC) substrate.