Diamond Semiconductor System And Method

Abstract

Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

1 . A method of fabricating doped diamond material, comprising:
 providing diamond material;   depositing a mask on the diamond material;   implanting a first set of dopant atoms into the diamond material layer; and   implanting a second set of dopant atoms sized to be larger than the first set of dopant atoms into the diamond material.   
     
     
         2 . The method of  claim 1 , wherein the diamond material is formed on a substrate that further comprises at least one of intrinsic diamond, fused silica, quartz, glass, sapphire, oxides, silicon oxide, silicon, and metal. 
     
     
         3 . The method of  claim 1 , wherein the diamond material forms a part of a light emitting device. 
     
     
         4 . The method of  claim 1 , wherein the diamond material forms a part of an RF attenuator device. 
     
     
         5 . The method of  claim 1 , wherein the diamond material forms a part of a logic device. 
     
     
         6 . The method of  claim 1 , wherein the diamond material is attached to a metal contact. 
     
     
         7 . The method of  claim 1 , wherein dopant atoms positioned in the diamond material form n-type material. 
     
     
         8 . The method of  claim 1 , wherein dopant atoms positioned in the diamond material form p-type material. 
     
     
         9 . The method of  claim 1 , further comprising patterning the diamond material by masking with at least one of a photoresist and a metallic element. 
     
     
         10 . The method of  claim 1 , further comprising defining different electrically active and inactive areas in the diamond material. 
     
     
         11 . The method of  claim 1 , wherein the second set of dopant atoms is implanted into the diamond material after the first set of dopant atoms. 
     
     
         12 . The method of  claim 1 , wherein the first set of dopant atoms forms pathways in the diamond material. 
     
     
         13 . The method of  claim 1 , wherein the first set of dopant atoms forms pathways in the diamond material into which the second set of dopant atoms is implanted. 
     
     
         14 . The method of  claim 1 , wherein temperature of the diamond material is changed after implant of the first set of dopant atoms. 
     
     
         15 . The method of  claim 1 , wherein at least a portion of the surface of the diamond material is terminated. 
     
     
         16 . The method of  claim 1 , wherein the diamond material further comprises polycrystalline diamond material. 
     
     
         17 . The method of  claim 1 , wherein the diamond material further comprises ultrananocrystalline diamond material.