Semiconductor structures and manufacturing methods thereof

Abstract

A semiconductor structure and a manufacturing method thereof are provided. The method includes: providing a patterned substrate, where the patterned substrate includes columnar structures; providing second inhibition layers, where the second inhibition layers are respectively located between two adjacent columnar structures of the columnar structures, and upper surfaces of the columnar structures are exposed; providing a light-emitting structure layer on the upper surface of each of the columnar structures; and removing the patterned substrate, to obtain holes at regions corresponding to the columnar structures, where the holes are respectively located between two adjacent second inhibition layers of the second inhibition layers, and the holes correspond to the light-emitting structure layers respectively. The manufacturing method provided by the present disclosure optimizes the manufacturing process and realizes full-color LED.

What is claimed is: 
     
         1 . A manufacturing method of a semiconductor structure, comprising:
 providing a patterned substrate, wherein the patterned substrate comprises columnar structures;   providing second inhibition layers, wherein the second inhibition layers are respectively located between two adjacent columnar structures of the columnar structures, and upper surfaces of the columnar structures are exposed;   providing a light-emitting structure layer on the upper surface of each of the columnar structures; and   removing the patterned substrate, to obtain holes at regions corresponding to the columnar structures, wherein the holes are respectively located between two adjacent second inhibition layers of the second inhibition layers, and the holes correspond to the light-emitting structure layers respectively.   
     
     
         2 . The method according to  claim 1 , further comprising:
 providing color converting layers in the holes, wherein one of the light-emitting structure layers and one of the color converting layer corresponding to the one of the light-emitting structure layers are stacked and arranged along a light-emitting direction, and the second inhibition layers are respectively located between two adjacent color converting layers of the color converting layers.   
     
     
         3 . The method according to  claim 1 , wherein after providing the light-emitting structure layers on the upper surfaces of the columnar structures and before removing the patterned substrate, the method further comprises:
 filling an insulation layer between two adjacent light-emitting structure layers of the light-emitting structure layers.   
     
     
         4 . The method according to  claim 3 , wherein when a material of the insulation layer is a transparent material, a ratio of a projected area of the second inhibition layers on a plane of the patterned substrate to a projected area of the light-emitting structure layers on the plane of the patterned substrate is greater than or equal to 1. 
     
     
         5 . The method according to  claim 1 , wherein after providing the light-emitting structure layers on the upper surfaces of the columnar structures, the method further comprises:
 inverting a structure obtained after providing the light-emitting structure layers on the upper surfaces of the columnar structures on a support base.   
     
     
         6 . The method according to  claim 1 , wherein providing the second inhibition layers comprising:
 providing a first inhibition layer on a side of the patterned substrate with the columnar structures; and   removing the first inhibition layer above the columnar structures, to obtain the second inhibition layers, wherein the second inhibition layers are respectively located between two adjacent columnar structures of the columnar structures.   
     
     
         7 . The method according to  claim 1 , wherein at least two of the columnar structures have different cross-sectional areas. 
     
     
         8 . The method according to  claim 1 , wherein one of the light-emitting structure layers comprises: a first semiconductor layer, an active layer and a second semiconductor layer that are stacked, and the active layer is located on a side of the first semiconductor layer far from the patterned substrate, and a conductive type of the second semiconductor layer is opposite to a conductive type of the first semiconductor layer; and
 after providing the light-emitting structure layers on the upper surfaces of the columnar structures, and before removing the patterned substrate, the method further comprises:
 providing a first electrode and a second electrode, wherein the first electrode penetrates the second semiconductor layer and the active layer, and is electrically connected to the first semiconductor layer; and the second electrode is electrically connected to the second semiconductor layer. 
   
     
     
         9 . The method according to  claim 1 , wherein the patterned substrate comprises a silicon substrate; and
 after removing the first inhibition layer above the columnar structures, to obtain the second inhibition layers, the method further comprises:
 treating the exposed upper surfaces of the columnar structures with an alkaline solution, such that the exposed upper surfaces of the columnar structures are ( 111 ) crystal surfaces. 
   
     
     
         10 . The method according to  claim 1 , wherein after removing the patterned substrate to obtain the holes at regions corresponding to the columnar structures, the method further comprises:
 forming a second light-emitting structure layer in each of the holes.   
     
     
         11 . A semiconductor structure, comprising:
 light-emitting structure layers and holes that are stacked, wherein the holes are located on a light-emitting side of the light-emitting structure layers; and   second inhibition layers, wherein the second inhibition layers are respectively located between two adjacent holes of the holes.   
     
     
         12 . The semiconductor structure according to  claim 11 , further comprising:
 a color converting layer located in each of the holes.   
     
     
         13 . The semiconductor structure according to  claim 11 , further comprising:
 an insulation layer located between two adjacent light-emitting structure layers of the light-emitting structure layers.   
     
     
         14 . The semiconductor structure according to  claim 13 , wherein a material of the insulation layer is a transparent material or a non-transparent material. 
     
     
         15 . The semiconductor structure according to  claim 14 , wherein when the material of the insulation layer is transparent material, a ratio of a projected area of the second inhibition layers on a horizontal plane to a projected area of the light-emitting structure layers on the horizontal plane is greater than or equal to 1, and the horizontal plane is parallel to an arranging direction of the second inhibition layers. 
     
     
         16 . The semiconductor structure according to  claim 11 , wherein at least two of the light-emitting structure layers have different cross-sectional areas. 
     
     
         17 . The semiconductor structure according to  claim 12 , wherein the light-emitting structure layers emit blue light, and the color converting layers comprise at least one of: yellow quantum dots, yellow phosphors, red quantum dots, red phosphors, green quantum dots or green phosphors. 
     
     
         18 . The semiconductor structure according to  claim 11 , further comprising:
 a reflection layer located on a side of each of the light-emitting structure layers far from the holes.   
     
     
         19 . The semiconductor structure according to  claim 11 , wherein one of the light-emitting structure layers comprises a first semiconductor layer, an active layer and a second semiconductor layer that are stacked, wherein the active layer is located on a side of the first semiconductor layer far from the substrate, and a conductive type of the second semiconductor layer is opposite to a conductive type of the first semiconductor layer; and
 the semiconductor structure further comprises: a first electrode and a second electrode, wherein the first electrode penetrates the second semiconductor layer and the active layer, and is electrically connected to the first semiconductor layer, and the second electrode is electrically connected to the second semiconductor layer.   
     
     
         20 . The semiconductor structure according to  claim 11 , further comprising:
 a second light-emitting structure layer in each of the holes, wherein the second light-emitting structure layer is on a light-emitting side of the corresponding light-emitting structure layer.