Substrate polishing apparatus and method of polishing substrate

Abstract

A substrate polishing apparatus includes a platen having a surface configured polish through relative movement between the platen and a semiconductor substrate, a slurry supply configured to supply slurry to the platen, wherein the slurry flows to a location between the semiconductor substrate and the platen, a substrate holder configured to grip and fix the semiconductor substrate to be in contact with the platen such that the platen contacts the surface of the semiconductor substrate to be polished, a temperature controller having a thermal conductive body that is configured to contact the surface of the platen to transfer heat between the thermal conductive body and the platen to control the temperature of the platen, and a first cleaner having an ultrasonic transducer and at least one probe, the ultrasonic transducer configured to generate ultrasonic waves and the probe configured to transmit the ultrasonic waves to an outer surface of the thermal conductive body.

1 . A substrate polishing apparatus, comprising:
 a platen having a surface configured to polish a semiconductor substrate through relative movement between the platen and the semiconductor substrate;   a slurry supply configured to supply slurry to the platen, wherein the slurry flows to a location between the semiconductor substrate and the platen;   a substrate holder configured to grip and fix the semiconductor substrate to be in contact with the platen such that the platen contacts the surface of the semiconductor substrate to be polished;   a temperature controller having a thermal conductive body that is configured to contact the surface of the platen to transfer heat between the thermal conductive body and the platen to control the temperature of the platen; and   a first cleaner having an ultrasonic transducer and at least one probe, the ultrasonic transducer configured to generate ultrasonic waves and the probe configured to transmit the ultrasonic waves to an outer surface of the thermal conductive body.   
     
     
         2 . The substrate polishing apparatus of  claim 1 , further comprising:
 a second cleaner having at least one cleaning nozzle, the cleaning nozzle configured to spray a cleaning solution to the outer surface of the thermal conductive body.   
     
     
         3 . The substrate polishing apparatus of  claim 2 , wherein the cleaning nozzle has a predetermined angle from a direction perpendicular to the surface of the platen, and
 the predetermined angle is within a range of 5 degrees to 70 degrees.   
     
     
         4 . The substrate polishing apparatus of  claim 2 , wherein the second cleaner further includes a plurality of the cleaning nozzles, and
 the plurality of cleaning nozzles are arranged along the outer surface of the thermal conductive body.   
     
     
         5 . The substrate polishing apparatus of  claim 1 , wherein the temperature controller includes,
 a first fluid transfer line through which cooling fluid moves along a lower surface of the thermal conductive body; and   a second fluid transfer line through which heating fluid moves along the lower surface of the thermal conductive body.   
     
     
         6 . The substrate polishing apparatus of  claim 5 , wherein each of the first and second fluid transfer lines includes a meandering arrangement extending in a zigzag pattern, or a spiral arrangement. 
     
     
         7 . The substrate polishing apparatus of  claim 1 , wherein the thermal conductive body includes a circular shape or a trapezoidal shape. 
     
     
         8 . The substrate polishing apparatus of  claim 1 , wherein the thermal conductive body rotates or sweeps on the platen. 
     
     
         9 . The substrate polishing apparatus of  claim 1 , wherein the probe is provided in the thermal conductive body to transmit the ultrasonic waves to the thermal conductive body. 
     
     
         10 . The substrate polishing apparatus of  claim 1 , wherein the ultrasonic transducer and the probe are provided on the thermal conductive body, and
 the probe contacts the outer surface of the thermal conductive body to transmit the ultrasonic waves.   
     
     
         11 . A substrate polishing apparatus, comprising:
 a platen having a surface configured to polish a semiconductor substrate through relative movement between the platen and the semiconductor substrate;   a slurry supply configured to supply slurry between the semiconductor substrate and the platen;   a substrate holder configured to grip and fix the semiconductor substrate to be in contact with the platen such that the platen contacts the surface of the semiconductor substrate to be polished;   a temperature controller in contact with the surface of the platen, the temperature controller having a thermal conductive body that is configured to absorb or dissipate heat from the surface of the platen;   a first cleaner having an ultrasonic transducer and at least one probe, the ultrasonic transducer configured to generate ultrasonic waves, the probe contacting the thermal conductive body to transmit the ultrasonic waves to the thermal conductive body; and   a second cleaner having a plurality of cleaning nozzles that are configured to spray a cleaning solution on an outer surface of the thermal conductive body.   
     
     
         12 . The substrate polishing apparatus of  claim 11 , wherein
 each of the plurality of cleaning nozzles has a predetermined angle from a direction perpendicular to the surface of the platen, and   the predetermined angle is within a range of 5 degrees to 70 degrees.   
     
     
         13 . The substrate polishing apparatus of  claim 11 , wherein the plurality of cleaning nozzles are arranged along an outer surface of the thermal conductive body. 
     
     
         14 . The substrate polishing apparatus of  claim 11 , wherein the temperature controller includes,
 a first fluid transfer line through which cooling water moves along a lower surface of the thermal conductive body; and   a second fluid transfer line through which heating water moves along the lower surface of the thermal conductive body.   
     
     
         15 . The substrate polishing apparatus of  claim 14 , wherein each of the first and second fluid transfer lines includes a meandering arrangement extending in a zigzag pattern, or a spiral arrangement. 
     
     
         16 . The substrate polishing apparatus of  claim 11 , wherein the thermal conductive body includes a circular shape or a trapezoidal shape. 
     
     
         17 . The substrate polishing apparatus of  claim 11 , wherein the thermal conductive body rotates or sweeps on the platen. 
     
     
         18 . The substrate polishing apparatus of  claim 11 , wherein the probe is provided in the thermal conductive body to transmit the ultrasonic waves to the thermal conductive body. 
     
     
         19 . The substrate polishing apparatus of  claim 11 , wherein the ultrasonic transducer and the probe are provided on the thermal conductive body, and the probe contacts the outer surface of the thermal conductive body to transmit the ultrasonic waves. 
     
     
         20 . A substrate polishing apparatus, comprising:
 a platen having a surface configured to polishing a semiconductor substrate through interaction between the platen and the semiconductor substrate using a slurry that is supplied on the surface of the platen;   a substrate holder configured to grip and fix the semiconductor substrate to be in contact with the platen such that the platen contacts the surface of the platen semiconductor substrate to be polished;   a temperature controller having a thermal conductive body that is configured to in contact with the platen to transfer heat between the surface of the platen and the thermal conductivity body;   a first cleaner configured to generate ultrasonic waves on an outer surface of the thermal conductive body to remove foreign substances that are formed on the outer surface; and   a second cleaner configured to spray a cleaning solution on the outer surface of the thermal conductive body at a predetermined angle from a direction perpendicular to the surface of the platen to remove the foreign substances.   
     
     
         21 . (canceled)