Polishing apparatus, polishing method, and semiconductor device manufacturing method

Abstract

A polishing apparatus according to the present embodiment includes a head, a polishing table, a rotation table, a particle supplier, and one chamber. The head holds an object. The polishing table polishes a polishing target surface of the polishing target object. The rotation table is capable of contacting the polishing target surface. The particle supplier supplies slurry containing particles onto the rotation table so that the particles are fixed onto at least part of the polishing target surface, while the polishing target surface is contacting the rotation table. The one chamber houses the polishing table and the rotation table.

1 . A polishing apparatus comprising:
 a head configured to hold an object;   a polishing table configured to polish a polishing target surface of the object;   a rotation table that is capable of contacting the polishing target surface;   a particle supplier configured to supply slurry containing particles onto the rotation table so that the particles are fixed onto at least part of the polishing target surface, while the polishing target surface is contacting the rotation table; and   one chamber in which the polishing table and the rotation table are housed.   
     
     
         2 . The polishing apparatus according to  claim 1 , wherein at least part of the polishing target surface includes a stepped portion or concave portion of the polishing target surface. 
     
     
         3 . The polishing apparatus according to  claim 1 , wherein the particle supplier includes a supply tube through which the slurry is supplied onto the rotation table, the supply tube penetrating through the rotation table and being opened at a surface of the rotation table, which contacts the polishing target surface. 
     
     
         4 . The polishing apparatus according to  claim 1 , wherein the particle supplier includes a dropper configured to supply the slurry onto the rotation table by dropping the slurry from above the rotation table. 
     
     
         5 . The polishing apparatus according to  claim 1 , wherein the particle supplier supplies the slurry further containing at least one of a flocculant that flocculates the particles or a dispersant that disperses the particles. 
     
     
         6 . The polishing apparatus according to  claim 1 , wherein the particle supplier supplies the slurry containing a plurality of the particles having different particle diameters. 
     
     
         7 . The polishing apparatus according to  claim 1 , wherein the particles contain at least one of silica, ceria, polyurethane, or polyethylene. 
     
     
         8 . The polishing apparatus according to  claim 1 , wherein the rotation table includes a table temperature control system configured to adjust temperature of the rotation table. 
     
     
         9 . The polishing apparatus according to  claim 1 , further comprising a gas supplier configured to supply gas onto the rotation table. 
     
     
         10 . The polishing apparatus according to  claim 1 , further comprising:
 a first drive current detector configured to detect drive current of the head during rotation or drive current of the rotation table during rotation; and   a first controller configured to control the particle supplier based on change of the detected drive current.   
     
     
         11 . The polishing apparatus according to  claim 1 , further comprising:
 a second drive current detector configured to detect drive current of the head during rotation or drive current of the polishing table and the rotation table during rotation; and   a second controller configured to control, based on change of the detected drive current, timing of switching between processing of the object by the polishing table and processing of the object by the rotation table.   
     
     
         12 . The polishing apparatus according to  claim 1 , wherein the rotation table includes a pad provided on a contact surface with the polishing target surface. 
     
     
         13 . A polishing method comprising:
 supplying slurry containing particles onto a rotation table;   contacting a polishing target surface of an object with the rotation table so that the particles are fixed onto at least part of the polishing target surface; and   polishing the polishing target surface on at least part of which the particles are fixed, the polishing target surface being polished with a polishing table.   
     
     
         14 . The polishing method according to  claim 13 , further comprising repeatedly contacting the polishing target surface with the rotation table and then polishing the polishing target surface on at least part of which the particles are fixed. 
     
     
         15 . A semiconductor device manufacturing method for a semiconductor substrate on which a film is formed, the method comprising:
 polishing the film on the semiconductor substrate by:
 supplying slurry containing particles onto a rotation table; 
 contacting a surface of the film with the rotation table so that the particles are fixed onto at least part of the surface; and 
 polishing the surface on at least part of which the particles are fixed, the surface being polished with a polishing table.