Light emitting element, method of manufacturing light emitting element, and display device

Abstract

Provided herein is a light emitting element including a semiconductor stack structure including an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer; an intermediate passivation structure disposed on a side surface of the semiconductor stack structure; and an insulating layer disposed on the intermediate passivation structure, and including a metal oxide. The intermediate passivation structure includes a crystal structure including nitrogen (N) and material forming the semiconductor stack structure.

What is claimed is: 
     
         1 . A light emitting element comprising:
 a semiconductor stack structure comprising:
 an N-type semiconductor layer; 
 a P-type semiconductor layer; and 
 an active layer disposed between the N-type semiconductor layer and the P-type semiconductor layer; 
   an intermediate passivation structure disposed on a side surface of the semiconductor stack structure; and   an insulating layer disposed on the intermediate passivation structure, and comprising a metal oxide,   wherein the intermediate passivation structure comprises a crystal structure comprising nitrogen (N), and a material forming the semiconductor stack structure.   
     
     
         2 . The light emitting element according to  claim 1 , wherein
 the semiconductor stack structure comprises GaP, and   the intermediate passivation structure comprises GaP x N (1-x) .   
     
     
         3 . The light emitting element according to  claim 1 , wherein
 the semiconductor stack structure comprises In x Al y Ga (1-x-y) P, and   the intermediate passivation structure comprises Al x In y Ga (1-y) PzN (1-z) .   
     
     
         4 . The light emitting element according to  claim 1 , wherein
 the intermediate passivation structure spaces apart an interior of the semiconductor stack structure from the insulating layer, and   the insulating layer comprises a metal oxide comprising at least one metal selected from a group comprising tantalum (Ta), hafnium (Hf), zirconium (Zr), lanthanum (La), silicon (Si), titanium (Ti), and aluminum (Al).   
     
     
         5 . The light emitting element according to  claim 1 , wherein the insulating layer comprises insulating layers comprising two or more materials different from each other. 
     
     
         6 . The light emitting element according to  claim 1 , wherein the metal oxide forming the insulating layer has a bonding energy greater than a bonding energy of the material forming the semiconductor stack structure. 
     
     
         7 . The light emitting element according to  claim 2 , wherein
 in a crystal structure of the intermediate passivation structure comprising the GaP, a displacement of P based on a reference position is determined to be within about 8% compared to a bonding length between Ga and P, and   the reference position of the P is a position of the P in the crystal structure of the intermediate passivation structure in case that a separate energy is not supplied to the light emitting element.   
     
     
         8 . The light emitting element according to  claim 1 , wherein a diameter of the light emitting element is about 100 μm or less. 
     
     
         9 . The light emitting element according to  claim 1 , wherein
 the intermediate passivation structure is an intermediate passivation layer, and   a first surface of the intermediate passivation layer contacts the semiconductor stack structure, and a second surface of the intermediate passivation layer contacts the insulating layer.   
     
     
         10 . The light emitting element according to  claim 1 , wherein
 the intermediate passivation structure comprises an intermediate passivation area, and   the intermediate passivation area comprises an area in which a side surface of the semiconductor stack structure is doped with N.   
     
     
         11 . The light emitting element according to  claim 1 , wherein the light emitting element comprises a red light emitting element that emits red light. 
     
     
         12 . A display device, comprising the light emitting element according to  claim 1 , that allows the light emitting element to be supplied with an energy of about 0.15 eV or less in case that the light emitting element emits light. 
     
     
         13 . A method of manufacturing a light emitting element, comprising:
 patterning a semiconductor stack structure on a growth substrate;   forming an intermediate passivation structure on a side surface of the semiconductor stack structure; and   forming an insulating layer comprising a metal oxide on the intermediate passivation structure, wherein the semiconductor stack structure comprises GaP, and the intermediate passivation structure comprises GaP x N (1-x) .   
     
     
         14 . The method according to  claim 13 , wherein the forming of the intermediate passivation structure comprises forming an intermediate passivation layer comprising GaP x N (1-x)  on the side surface of the semiconductor stack structure. 
     
     
         15 . The method according to  claim 13 , wherein the forming of the intermediate passivation structure comprises doping the side surface of the semiconductor stack structure with nitrogen (N). 
     
     
         16 . The method according to  claim 13 , wherein the insulating layer comprises a metal oxide comprising at least one metal selected from a group comprising tantalum (Ta), hafnium (Hf), zirconium (Zr), lanthanum (La), silicon (Si), titanium (Ti), and aluminum (Al). 
     
     
         17 . The method according to  claim 13 , further comprising:
 separating a structure comprising the semiconductor stack structure, the intermediate passivation structure, and the insulating layer.   
     
     
         18 . The method according to  claim 13 , wherein the patterning of the semiconductor stack structure comprises sequentially growing semiconductor layers on the growth substrate;
 and etching the grown semiconductor layers.   
     
     
         19 . A display device, comprising:
 a base layer; and   sub-pixels disposed on the base layer, wherein   each of the sub-pixels comprises series parts comprising light emitting elements, an anode connection electrode electrically connected to the series parts, and a cathode connection electrode electrically connected to the series parts,   the sub-pixels comprise a first sub-pixel that provides red light, a second sub-pixel that provides green light, and a third sub-pixel that provides blue light,   the light emitting elements comprise first light emitting elements comprised in the first sub-pixel, second light emitting elements comprised in the second sub-pixel, and third light emitting elements comprised in the third sub-pixel,   the series parts comprise r red series parts comprised in the first sub-pixel, g green series parts comprised in the second sub-pixel, and b blue series parts comprised in the third sub-pixel,   r, g, and b are natural numbers, and   r is greater than g or b.   
     
     
         20 . A display device, comprising:
 a base layer; and   sub-pixels disposed on the base layer, and comprising a first sub-pixel comprising a first light emitting element that emits red light, a second sub-pixel comprising a second light emitting element that emits green light, and a third sub-pixel comprising a third light emitting element that emits blue light, wherein   the first light emitting element has a first size,   the second light emitting element has a second size,   the third light emitting clement has a third size, and   the first size is greater than the second size or the third size.