Solar cell and manufacturing method therefor

Abstract

A manufacturing method of a solar cell includes: performing a boron-diffusion treatment to one surface in a first direction of an N-type silicon wafer, and forming a diffusion layer and a borosilicate-glass layer; by using a chain-type rinsing device, sequentially removing a winding-plated borosilicate-glass layer and a winding-plated diffusion layer winding-plated onto the N-type silicon wafer, and performing a polishing treatment to the surface in the second direction of the N-type silicon wafer; by using a passivation-contacting process, treating the surface in the second direction of the N-type silicon wafer, to form a tunneling oxidation layer, a doped silicon layer and a first phosphorosilicate-glass layer; by using the chain-type rinsing device, removing a second phosphorosilicate-glass layer and a winding-plated silicon layer winding-plated onto at least part of the borosilicate-glass layer; and, by using the same chain-type rinsing device, removing the borosilicate-glass layer and the first phosphorosilicate-glass layer.

1 . A manufacturing method of a solar cell, wherein the manufacturing method comprises:
 performing a boron-diffusion treatment to one surface in a first direction of an N-type silicon wafer, forming a diffusion layer and a borosilicate-glass layer that are sequentially stacked on the surface in the first direction of the N-type silicon wafer, and forming a winding-plated diffusion layer and a winding-plated borosilicate-glass layer on a side surface and one surface in a second direction of the N-type silicon wafer;   by using a chain-type rinsing device, performing a first corroding and rinsing treatment to the side surface and the surface in the second direction of the N-type silicon wafer after the boron-diffusion treatment, to sequentially remove the winding-plated borosilicate-glass layer and the winding-plated diffusion layer, and performing a polishing treatment to the surface in the second direction of the N-type silicon wafer;   by using a passivation-contacting process, treating the surface in the second direction of the N-type silicon wafer, to form a tunneling oxidation layer, a doped silicon layer and a first phosphorosilicate-glass layer that are sequentially stacked on the surface in the second direction of the N-type silicon wafer, and forming a winding-plated silicon layer and a second phosphorosilicate-glass layer on at least part of the borosilicate-glass layer;   by using the chain-type rinsing device, performing a second corroding and rinsing treatment to the surface in the first direction of the N-type silicon wafer that is treated by using the passivation-contacting process, to sequentially remove the second phosphorosilicate-glass layer and the winding-plated silicon layer; and   by using the same chain-type rinsing device, performing a third corroding and rinsing treatment to the surface in the first direction and the surface in the second direction of the N-type silicon wafer after the second corroding and rinsing treatment, to remove the borosilicate-glass layer and the first phosphorosilicate-glass layer.   
     
     
         2 . The manufacturing method of the solar cell according to  claim 1 , wherein the step of, by using the chain-type rinsing device, performing the first corroding and rinsing treatment to the side surface and the surface in the second direction of the N-type silicon wafer after the boron-diffusion treatment, to sequentially remove the winding-plated borosilicate-glass layer and the winding-plated diffusion layer, and performing the polishing treatment to the surface in the second direction of the N-type silicon wafer comprises:
 contacting the surface in the second direction of the N-type silicon wafer after the boron-diffusion treatment with transfer rollers comprised by the chain-type rinsing device;   conveying the N-type silicon wafer after the boron-diffusion treatment to a pickling bath comprised by the chain-type rinsing device by using the transfer rollers, wherein a liquid level of an acidic rinsing solution located in the pickling bath is higher than the surface in the second direction of the N-type silicon wafer, and lower than the surface in the first direction of the N-type silicon wafer, and removing the winding-plated borosilicate-glass layer by using the acidic rinsing solution; and   by using the transfer rollers, conveying the N-type silicon wafer that is treated by using the acidic rinsing solution to an alkaline-rinsing bath comprised by the chain-type rinsing device, wherein a liquid level of an alkaline rinsing solution located in the alkaline-rinsing bath is higher than the surface in the second direction of the N-type silicon wafer, and lower than the surface in the first direction of the N-type silicon wafer, and, by using the alkaline rinsing solution, removing the winding-plated diffusion layer, and performing the polishing treatment to the surface in the second direction of the N-type silicon wafer.   
     
     
         3 . The manufacturing method of the solar cell according to  claim 1 , wherein after the step of performing the polishing treatment to the surface in the second direction of the N-type silicon wafer, and before the step of, by using the passivation-contacting process, treating the surface in the second direction of the N-type silicon wafer, the manufacturing method of the solar cell further comprises:
 in a first water-rinsing bath comprised by the chain-type rinsing device, spraying deionized water to the surface in the first direction and the surface in the second direction of the N-type silicon wafer after the polishing treatment, and performing a first rinsing treatment to the N-type silicon wafer after the polishing treatment.   
     
     
         4 . The manufacturing method of the solar cell according to  claim 1 , wherein the step of, by using the chain-type rinsing device, performing the second corroding and rinsing treatment to the surface in the first direction of the N-type silicon wafer that is treated by using the passivation-contacting process, to sequentially remove the second phosphorosilicate-glass layer and the winding-plated silicon layer comprises:
 contacting the surface in the first direction of the N-type silicon wafer that is treated by using the passivation-contacting process with transfer rollers comprised by the chain-type rinsing device;   spreading a water film fully on the surface in the second direction of the N-type silicon wafer that is treated by using the passivation-contacting process, and, by using a first rinsing solution, removing the second phosphorosilicate-glass layer by using a roller-carrying-liquid rinsing mode; and   by using the transfer rollers, placing the N-type silicon wafer that is treated by using the first rinsing solution into a second rinsing solution, wherein a liquid level of the second rinsing solution is higher than the surface in the first direction of the N-type silicon wafer, and removing the winding-plated silicon layer by using the second rinsing solution.   
     
     
         5 . The manufacturing method of the solar cell according to  claim 4 , wherein the second rinsing solution comprises deionized water, a potassium-hydroxide solution and a polishing additive;
 a volume ratio of the deionized water, the potassium-hydroxide solution and the polishing additive is 30-40:3-4:1;   a concentration of the potassium-hydroxide solution is 40%-50%;   a rinsing temperature is 69° C.-70° C.; and   a rinsing duration is 135 s-150 s.   
     
     
         6 . The manufacturing method of the solar cell according to  claim 5 , wherein the step of, by using the chain-type rinsing device, removing the winding-plated silicon layer further comprises:
 in a process of removing the winding-plated silicon layer by using the second rinsing solution, supplementing at least one of the deionized water, the potassium-hydroxide solution and the polishing additive into the second rinsing solution, to cause the volume ratio of the deionized water, the potassium-hydroxide solution and the polishing additive in the second rinsing solution to satisfy 30-40:3-4:1.   
     
     
         7 . The manufacturing method of the solar cell according to  claim 1 , wherein the step of, by using the same chain-type rinsing device, removing the borosilicate-glass layer comprises:
 placing the surface in the first direction of the N-type silicon wafer after the second corroding and rinsing treatment into a third rinsing solution, wherein a liquid level of the third rinsing solution is higher than the surface in the first direction of the N-type silicon wafer, and removing the borosilicate-glass layer by using the third rinsing solution.   
     
     
         8 . The manufacturing method of the solar cell according to  claim 1 , wherein the step of, by using the same chain-type rinsing device, removing the first phosphorosilicate-glass layer comprises:
 placing the surface in the second direction of the N-type silicon wafer after the second corroding and rinsing treatment into a fourth rinsing solution, wherein a liquid level of the fourth rinsing solution is higher than the surface in the second direction of the N-type silicon wafer, and removing the first phosphorosilicate-glass layer by using the fourth rinsing solution.   
     
     
         9 . The manufacturing method of the solar cell according to  claim 1 , wherein the chain-type rinsing device comprises a first rinsing tank, a second rinsing tank, a third rinsing tank and a fourth rinsing tank that are sequentially arranged, and a plurality of transfer rollers for conveying;
 the first rinsing tank is used to contain a first rinsing liquid for removing the second phosphorosilicate-glass layer, a diameter of the transfer rollers that are provided over the first rinsing tank is H 1 , and a distance between a liquid level of the first rinsing solution and a bottom of the transfer rollers that are provided over the first rinsing tank is H 2 , wherein ⅓ H 1 ≤H 2 ≤½ H 1 ;   the second rinsing tank is used to contain the second rinsing solution for removing the winding-plated silicon layer, and the transfer rollers that are provided over the second rinsing tank are submerged inside the second rinsing solution; and   the third rinsing tank is used to contain the third rinsing solution for removing the borosilicate-glass layer, the transfer rollers that are provided over the third rinsing tank are submerged inside the third rinsing solution, the fourth rinsing tank is used to contain the fourth rinsing solution for removing the first phosphorosilicate-glass layer, and the transfer rollers that are provided over the fourth rinsing tank are submerged inside the fourth rinsing solution; or the third rinsing tank is used to contain the fourth rinsing solution for removing the first phosphorosilicate-glass layer, the transfer rollers that are provided over the third rinsing tank are submerged inside the fourth rinsing solution, the fourth rinsing tank is used to contain the third rinsing solution for removing the borosilicate-glass layer, and the transfer rollers that are provided over the fourth rinsing tank are submerged inside the third rinsing solution.   
     
     
         10 . The manufacturing method of the solar cell according to  claim 9 , wherein the chain-type rinsing device further comprises a second water-rinsing bath for performing a second rinsing treatment;
 the second water-rinsing bath is provided between the second rinsing tank and the third rinsing tank; and   after the step of, by using the chain-type rinsing device, removing the winding-plated silicon layer, and before the step of, by using the same chain-type rinsing device, removing the borosilicate-glass layer, the manufacturing method of the solar cell further comprises:   in the second water-rinsing bath, spraying deionized water to the surface in the first direction and the surface in the second direction of the N-type silicon wafer after the second corroding and rinsing treatment, to perform the second rinsing treatment to the N-type silicon wafer after the second corroding and rinsing treatment.   
     
     
         11 . The manufacturing method of the solar cell according to  claim 1 , wherein after the step of, by using the same chain-type rinsing device, performing the third corroding and rinsing treatment to the surface in the first direction and the surface in the second direction of the N-type silicon wafer after the second corroding and rinsing treatment, to remove the borosilicate-glass layer and the first phosphorosilicate-glass layer, the manufacturing method of the solar cell further comprises:
 forming a first passivation layer on the diffusion layer;   performing a passivation treatment to the first passivation layer and the doped silicon layer, to form second passivation layers on both of the first passivation layer and the doped silicon layer, wherein a material of the second passivation layers and a material of the first passivation layer are different; and   performing a metallization treatment to each of the second passivation layers, to form electrodes on the second passivation layers.   
     
     
         12 . A solar cell, wherein the solar cell is manufactured by using the manufacturing method of the solar cell according to  claim 1 . 
     
     
         13 . The manufacturing method of the solar cell according to  claim 2 , wherein after the step of, by using the same chain-type rinsing device, performing the third corroding and rinsing treatment to the surface in the first direction and the surface in the second direction of the N-type silicon wafer after the second corroding and rinsing treatment, to remove the borosilicate-glass layer and the first phosphorosilicate-glass layer, the manufacturing method of the solar cell further comprises:
 forming a first passivation layer on the diffusion layer;   performing a passivation treatment to the first passivation layer and the doped silicon layer, to form second passivation layers on both of the first passivation layer and the doped silicon layer, wherein a material of the second passivation layers and a material of the first passivation layer are different; and   performing a metallization treatment to each of the second passivation layers, to form electrodes on the second passivation layers.   
     
     
         14 . The manufacturing method of the solar cell according to  claim 3 , wherein after the step of, by using the same chain-type rinsing device, performing the third corroding and rinsing treatment to the surface in the first direction and the surface in the second direction of the N-type silicon wafer after the second corroding and rinsing treatment, to remove the borosilicate-glass layer and the first phosphorosilicate-glass layer, the manufacturing method of the solar cell further comprises:
 forming a first passivation layer on the diffusion layer;   performing a passivation treatment to the first passivation layer and the doped silicon layer, to form second passivation layers on both of the first passivation layer and the doped silicon layer, wherein a material of the second passivation layers and a material of the first passivation layer are different; and   performing a metallization treatment to each of the second passivation layers, to form electrodes on the second passivation layers.   
     
     
         15 . The manufacturing method of the solar cell according to  claim 4 , wherein after the step of, by using the same chain-type rinsing device, performing the third corroding and rinsing treatment to the surface in the first direction and the surface in the second direction of the N-type silicon wafer after the second corroding and rinsing treatment, to remove the borosilicate-glass layer and the first phosphorosilicate-glass layer, the manufacturing method of the solar cell further comprises:
 forming a first passivation layer on the diffusion layer;   performing a passivation treatment to the first passivation layer and the doped silicon layer, to form second passivation layers on both of the first passivation layer and the doped silicon layer, wherein a material of the second passivation layers and a material of the first passivation layer are different; and   performing a metallization treatment to each of the second passivation layers, to form electrodes on the second passivation layers.   
     
     
         16 . The manufacturing method of the solar cell according to  claim 5 , wherein after the step of, by using the same chain-type rinsing device, performing the third corroding and rinsing treatment to the surface in the first direction and the surface in the second direction of the N-type silicon wafer after the second corroding and rinsing treatment, to remove the borosilicate-glass layer and the first phosphorosilicate-glass layer, the manufacturing method of the solar cell further comprises:
 forming a first passivation layer on the diffusion layer;   performing a passivation treatment to the first passivation layer and the doped silicon layer, to form second passivation layers on both of the first passivation layer and the doped silicon layer, wherein a material of the second passivation layers and a material of the first passivation layer are different; and   performing a metallization treatment to each of the second passivation layers, to form electrodes on the second passivation layers.   
     
     
         17 . The manufacturing method of the solar cell according to  claim 6 , wherein after the step of, by using the same chain-type rinsing device, performing the third corroding and rinsing treatment to the surface in the first direction and the surface in the second direction of the N-type silicon wafer after the second corroding and rinsing treatment, to remove the borosilicate-glass layer and the first phosphorosilicate-glass layer, the manufacturing method of the solar cell further comprises:
 forming a first passivation layer on the diffusion layer;   performing a passivation treatment to the first passivation layer and the doped silicon layer, to form second passivation layers on both of the first passivation layer and the doped silicon layer, wherein a material of the second passivation layers and a material of the first passivation layer are different; and   performing a metallization treatment to each of the second passivation layers, to form electrodes on the second passivation layers.   
     
     
         18 . The manufacturing method of the solar cell according to  claim 7 , wherein after the step of, by using the same chain-type rinsing device, performing the third corroding and rinsing treatment to the surface in the first direction and the surface in the second direction of the N-type silicon wafer after the second corroding and rinsing treatment, to remove the borosilicate-glass layer and the first phosphorosilicate-glass layer, the manufacturing method of the solar cell further comprises:
 forming a first passivation layer on the diffusion layer;   performing a passivation treatment to the first passivation layer and the doped silicon layer, to form second passivation layers on both of the first passivation layer and the doped silicon layer, wherein a material of the second passivation layers and a material of the first passivation layer are different; and   performing a metallization treatment to each of the second passivation layers, to form electrodes on the second passivation layers.   
     
     
         19 . The manufacturing method of the solar cell according to  claim 8 , wherein after the step of, by using the same chain-type rinsing device, performing the third corroding and rinsing treatment to the surface in the first direction and the surface in the second direction of the N-type silicon wafer after the second corroding and rinsing treatment, to remove the borosilicate-glass layer and the first phosphorosilicate-glass layer, the manufacturing method of the solar cell further comprises:
 forming a first passivation layer on the diffusion layer;   performing a passivation treatment to the first passivation layer and the doped silicon layer, to form second passivation layers on both of the first passivation layer and the doped silicon layer, wherein a material of the second passivation layers and a material of the first passivation layer are different; and   performing a metallization treatment to each of the second passivation layers, to form electrodes on the second passivation layers.   
     
     
         20 . The manufacturing method of the solar cell according to  claim 9 , wherein after the step of, by using the same chain-type rinsing device, performing the third corroding and rinsing treatment to the surface in the first direction and the surface in the second direction of the N-type silicon wafer after the second corroding and rinsing treatment, to remove the borosilicate-glass layer and the first phosphorosilicate-glass layer, the manufacturing method of the solar cell further comprises:
 forming a first passivation layer on the diffusion layer;   performing a passivation treatment to the first passivation layer and the doped silicon layer, to form second passivation layers on both of the first passivation layer and the doped silicon layer, wherein a material of the second passivation layers and a material of the first passivation layer are different; and   performing a metallization treatment to each of the second passivation layers, to form electrodes on the second passivation layers.