Quantum dot light emitting diode and manufacturing method thereof

Abstract

This disclosure discloses a quantum dot light emitting diode and a manufacturing method thereof. The quantum dot light emitting diode includes an anode and a cathode disposed opposite to each other, a quantum dot light-emitting layer disposed between the anode and the cathode, and an electronic functional layer disposed between the quantum dot light-emitting layer and the cathode; a surface of the cathode facing away from the anode is treated with an active material, or a buffer layer is provided on the surface of the cathode facing away from the anode, and material of the buffer layer contains an active material; in this case the active material is selected from at least one of an organic hydrocarbon having at least one hydrogen atom substituted with a carboxyl group, an organic ester containing a carbon-carbon double bond or a carbon-carbon triple bond or a benzene ring, and an unsaturated ketone.

What is claimed is: 
     
         1 . A quantum dot light emitting diode, comprising an anode and a cathode disposed opposite to each other, a quantum dot light-emitting layer disposed between the anode and the cathode, and an electronic functional layer disposed between the quantum dot light-emitting layer and the cathode;
 wherein a surface of the cathode facing away from the anode is treated with an active material, or a buffer layer is provided on the surface of the cathode facing away from the anode, and material of the buffer layer contains an active material;   wherein the active material is selected from at least one of an organic hydrocarbon having at least one hydrogen atom substituted with a carboxyl group, an organic ester containing a carbon-carbon double bond or a carbon-carbon triple bond or a benzene ring, and an unsaturated ketone.   
     
     
         2 . The quantum dot light emitting diode according to  claim 1 , wherein the active material is selected from at least one of acrylic acid, benzoic acid, methacrylic acid, 3-butenoic acid, crotonic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, hydroxyethyl methacrylate, methyl methacrylate, butyl acrylate, trimethylolpropane trienate, and N-vinyl pyrrolidone. 
     
     
         3 . The quantum dot light emitting diode according to  claim 1 , wherein in case where the cathode is a cathode whose surface facing away from the anode is treated with the active material, the active material on the surface of the cathode is 0.001%-1% of the total weight of the cathode. 
     
     
         4 . The quantum dot light emitting diode according to  claim 1 , wherein in case where the buffer layer is provided on the surface of the cathode facing away from the anode, the material of the buffer layer is a mixed material of the active material and a polymer. 
     
     
         5 . The quantum dot light emitting diode according to  claim 4 , wherein the polymer is selected from one or more of polymethyl methacrylate, polyvinyl chloride, poly α-methylstyrene resin, polybutylene terephthalate, polypropylene carbonate, polystyrene, polyhydroxyethyl methacrylate, ethyl polymethacrylate, ethyl polyacrylate, n-butyl polyacrylate, lauryl acrylate, and urethane acrylate. 
     
     
         6 . The quantum dot light emitting diode according to any one of  claims 1, 2, 4 and 5 , wherein a weight percentage of the active ingredient in the buffer layer is 1%-70%. 
     
     
         7 . The quantum dot light emitting diode according to any one of  claims 1, 2, 4 and 5 , wherein thickness of the buffer layer is 100 nm-20 μm. 
     
     
         8 . The quantum dot light emitting diode according to any one of  claims 1-3 , wherein treatment with the active material comprises: cleaning the cathode with the active material solution; or
 preparing a mixed solution containing the active material, depositing the mixed solution on the surface of the cathode; or   exposing the cathode to an atmosphere containing a gaseous active material.   
     
     
         9 . The quantum dot light emitting diode according to any one of  claims 1, 2, 4 and 5 , wherein the buffer layer covers peripheral wall surfaces of the anode, the cathode, the quantum dot light-emitting layer, and the electronic functional layer. 
     
     
         10 . A manufacturing method of quantum dot light emitting diode, comprising steps of:
 providing a prefabricated device, which comprises an anode substrate, a quantum dot light-emitting layer coupled to an anode surface of the anode substrate, an electronic functional layer coupled to a surface of the quantum dot light-emitting layer facing away from the anode, and a cathode coupled to a surface of the electronic functional layer facing away from the quantum dot light-emitting layer; and   cleaning the cathode with an active material solution, and preparing the quantum dot light emitting diode; wherein the active material in the active material solution is selected from at least one of an organic hydrocarbon having at least one hydrogen atom substituted with a carboxyl group, an organic ester containing a carbon-carbon double bond or a carbon-carbon triple bond or a benzene ring, and an unsaturated ketone.   
     
     
         11 . The manufacturing method of quantum dot light emitting diode according to  claim 10 , wherein a volume percentage content of the active material in the active material solution is 0.1%-100%. 
     
     
         12 . The manufacturing method of quantum dot light emitting diode according to  claim 11 , wherein the active material is selected from at least one of acrylic acid, benzoic acid, methacrylic acid, 3-butenoic acid, crotonic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, hydroxyethyl methacrylate, methyl methacrylate, butyl acrylate, trimethylolpropane trienate, and N-vinyl pyrrolidone. 
     
     
         13 . A manufacturing method of quantum dot light emitting diode, comprising steps of:
 providing a prefabricated device, which comprises an anode substrate, a quantum dot light-emitting layer coupled to an anode surface of the anode substrate, an electronic functional layer coupled to a surface of the quantum dot light-emitting layer facing away from the anode, and a cathode coupled to a surface of the electronic functional layer facing away from the quantum dot light-emitting layer; and   placing the prefabricated device in an atmosphere environment containing a gaseous active material, treating the cathode with the active material and preparing the quantum dot light emitting diode; wherein the gaseous active material is selected from at least one of an organic hydrocarbon having at least one hydrogen atom substituted with a carboxyl group, an organic ester containing a carbon-carbon double bond or a carbon-carbon triple bond or a benzene ring, and an unsaturated ketone.   
     
     
         14 . The manufacturing method of quantum dot light emitting diode according to  claim 13 , wherein the atmosphere environment is a mixed gaseous environment of the gaseous active material with at least one of gases such as oxygen, nitrogen, argon, and carbon dioxide. 
     
     
         15 . The manufacturing method of quantum dot light emitting diode according to  claim 14 , wherein the gaseous active material is 1%-50% of total volume of the gases in the atmosphere environment. 
     
     
         16 . The manufacturing method of quantum dot light emitting diode according to  claim 14 , wherein temperature of the gaseous environment is 25-150° C., and total pressure is −0.1-4 MPa. 
     
     
         17 . The manufacturing method of quantum dot light emitting diode according to any one of  claims 14-16 , wherein the active material is selected from at least one of acrylic acid, benzoic acid, methacrylic acid, 3-butenoic acid, crotonic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, hydroxyethyl methacrylate, methyl methacrylate, butyl acrylate, trimethylolpropane trienate, and N-vinyl pyrrolidone. 
     
     
         18 . A manufacturing method of quantum dot light emitting diode, comprising steps of:
 providing a prefabricated device, which comprises an anode substrate, a quantum dot light-emitting layer coupled to an anode surface of the anode substrate, an electronic functional layer coupled to a surface of the quantum dot light-emitting layer facing away from the anode, and a cathode coupled to a surface of the electronic functional layer facing away from the quantum dot light-emitting layer; and   preparing a mixed solution containing an active material and a polymer, depositing the mixed solution on a surface of the cathode facing away from the anode, annealing, and preparing a buffer layer; wherein the active material in the active material solution is selected from at least one of an organic hydrocarbon having at least one hydrogen atom substituted with a carboxyl group, an organic ester containing a carbon-carbon double bond or a carbon-carbon triple bond or a benzene ring, and an unsaturated ketone.   
     
     
         19 . The manufacturing method of quantum dot light emitting diode according to  claim 18 , wherein the active material is 1%-70% of total weight of the active material and the polymer in the mixed solution. 
     
     
         20 . The manufacturing method of quantum dot light emitting diode according to  claim 19 , wherein the active material is selected from at least one of acrylic acid, benzoic acid, methacrylic acid, 3-butenoic acid, crotonic acid, acetic acid, propionic acid, butyric acid, isobutyric acid, hydroxyethyl methacrylate, methyl methacrylate, butyl acrylate, trimethylolpropane trienate, and N-vinyl pyrrolidone.