Composite passive component and preparation method therefor

Abstract

A composite passive component includes: a substrate, an epitaxial structure and a passive component body. The epitaxial structure is set on the substrate, and a two-dimensional electron gas with a specific pattern is formed in the epitaxial structure. The passive component body is in ohmic contact with the two-dimensional electron gas.

What is claimed is: 
     
         1 . A composite passive component, comprising:
 a substrate;   an epitaxial structure, set on the substrate, wherein a two-dimensional electron gas with a specific pattern is formed in the epitaxial structure; and   a passive component body, set on a side, away from the substrate, of the epitaxial structure, and being in ohmic contact with the two-dimensional electron gas.   
     
     
         2 . The composite passive component according to  claim 1 , wherein an isolation part is formed in the epitaxial structure, and the isolation part defines an area corresponding to the two-dimensional electron gas. 
     
     
         3 . The composite passive component according to  claim 1 , wherein the specific pattern of the two-dimensional electron gas is adaptively set with the passive component body. 
     
     
         4 . The composite passive component according to  claim 1 , wherein the composite passive component is a composite capacitor, the passive component body comprises: a metal capacitor structure, set on the side, away from the substrate, of the epitaxial structure, the metal capacitor structure comprises a first metal plate and a second metal plate, the second metal plate is located on a side, away from the substrate, of the first metal plate, and the first metal plate is insulated from the two-dimensional electron gas; and
 along a thickness direction of the composite passive component, a total projection, on the substrate, of the first metal plate and the second metal plate at least partially overlaps with a projection, on the substrate, of the two-dimensional electron gas.   
     
     
         5 . The composite passive component according to  claim 4 , wherein the two-dimensional electron gas is configured to be equipotential with the second metal plate; and
 along the thickness direction of the composite passive component, a projection, on the substrate, of the first metal plate at least partially overlaps with the projection, on the substrate, of the two-dimensional electron gas.   
     
     
         6 . The composite passive component according to  claim 4 , wherein the composite passive component further comprises:
 a first interlayer dielectric layer, covering the epitaxial structure;   the metal capacitor structure is set on a side, away from the substrate, of the first interlayer dielectric layer, and the metal capacitor structure comprises the first metal plate, the second metal plate and a second interlayer dielectric layer.   
     
     
         7 . The composite passive component according to  claim 4 , wherein along the thickness direction of the composite passive component, the projection, on the substrate, of the two-dimensional electron gas covers a projection, on the substrate, of the first metal plate and a projection, on the substrate, of the second metal plate. 
     
     
         8 . The composite passive component according to  claim 4 , wherein the two-dimensional electron gas is insulated from the second metal plate. 
     
     
         9 . The composite passive component according to  claim 1 , wherein the two-dimensional electron gas is in a first planar spiral shape, the composite passive component is a composite inductor, and the passive component body comprises:
 a first connecting metal layer, being in ohmic contact with a first end of the two-dimensional electron gas;   an inductive metal wire, set on the side, away from the substrate, of the epitaxial structure, the inductive metal wire being in a second planar spiral shape;   a first connecting metal, wherein a first end of the first connecting metal is electrically connected with the first connecting metal layer, and a second end of the first connecting metal is electrically connected with a first end of the inductive metal wire,   wherein the first end of the inductive metal wire is one end, corresponding to a center point of the second planar spiral shape, of the inductive metal wire; the first end of the two-dimensional electron gas is one end, corresponding to a center point of the first planar spiral shape, of the two-dimensional electron gas.   
     
     
         10 . The composite passive component according to  claim 9 , wherein a spiral direction of the first planar spiral shape is opposite to a spiral direction of the second planar spiral shape. 
     
     
         11 . The composite passive component according to  claim 9 , wherein a width of the two-dimensional electron gas is greater than a width of the inductive metal wire. 
     
     
         12 . The composite passive component according to  claim 9 , wherein the composite passive component further comprises a first interlayer dielectric layer, a first electrode metal, a second electrode metal, a second connecting metal layer and a second connecting metal;
 the first interlayer dielectric layer is set on the side, away from the substrate, of the epitaxial structure; the inductive metal wire is set on a side, away from the substrate, of the first interlayer dielectric layer;   the first electrode metal, the second electrode metal and the inductive metal wire are set on a same layer, and the first electrode metal is electrically connected with a second end of the inductive metal wire;   the second connecting metal layer and the first connecting metal layer are set on a same layer, and the second connecting metal layer is in ohmic contact with a second end of the two-dimensional electron gas; and   the second connecting metal penetrates through the first interlayer dielectric layer, a first end of the second connecting metal is electrically connected with the second connecting metal layer, and a second end of the second connecting metal is electrically connected with the second electrode metal.   
     
     
         13 . The composite passive component according to  claim 9 , wherein the composite passive component further comprises a second interlayer dielectric layer, a first ohmic metallized through hole and a second ohmic metallized through hole; the second interlayer dielectric layer is set between the first interlayer dielectric layer and the epitaxial structure; the first ohmic metallized through hole penetrates through the second interlayer dielectric layer, and the second ohmic metallized through hole penetrates through the second interlayer dielectric layer; and
 the first connecting metal layer is in ohmic contact with the first end of the two-dimensional electron gas through the first ohmic metallized through hole, and the second connecting metal layer is in ohmic contact with the second end of the two-dimensional electron gas through the second ohmic metallized through hole.   
     
     
         14 . The composite passive component according to  claim 9 , further comprising:
 a protective layer covering the inductive metal wire.   
     
     
         15 . A preparation method for a composite passive component, comprising:
 providing a substrate;   forming an epitaxial structure layer on the substrate by epitaxy;   performing ion implantation on the epitaxial structure layer to form an isolation part, to define an area corresponding to a two-dimensional electron gas; and   setting a passive component body on a side, away from the substrate, of the epitaxial structure, and making the passive component body be in ohmic contact with the two-dimensional electron gas.   
     
     
         16 . The preparation method according to  claim 15 , wherein the passive component body comprises a metal capacitor structure, and the setting a passive component body on a side, away from the substrate, of the epitaxial structure, comprises:
 forming the metal capacitor structure on the side, away from the substrate, of the epitaxial structure, the metal capacitor structure comprises a first metal plate and a second metal plate, the second metal plate is located on a side, away from the substrate, of the first metal plate, and the first metal plate is insulated from the two-dimensional electron gas; and   along a thickness direction of the composite passive component, a total projection, on the substrate, of the first metal plate and the second metal plate at least partially overlaps with a projection, on the substrate, of the two-dimensional electron gas.   
     
     
         17 . The preparation method according to  claim 16 , wherein the forming the metal capacitor structure on the side, away from the substrate, of the epitaxial structure, comprises:
 forming the first metal plate, so that along the thickness direction of the composite passive component, a projection, on the substrate, of the first metal plate at least partially overlaps with a projection, on the substrate, of the two-dimensional electron gas;   wherein when forming the metal capacitor structure on the side, away from the substrate, of the epitaxial structure, the preparation method further comprises:   forming a connecting structure, wherein the connecting structure is in ohmic contact with the two-dimensional electron gas and is electrically connected with the second metal plate.   
     
     
         18 . The preparation method according to  claim 15 , wherein the epitaxial structure comprises a two-dimensional electron gas in a first planar spiral shape, the passive component body comprises a first connecting metal layer, an inductive metal wire and a first connecting metal;
 the setting a passive component body on a side, away from the substrate, of the epitaxial structure, comprises:   forming the first connecting metal layer on the side, away from the substrate, of the epitaxial structure, the first connecting metal layer being in ohmic contact with a first end of the two-dimensional electron gas; and   forming the first connecting metal and the inductive metal wire on the side, away from the substrate, of the epitaxial structure;   wherein the inductive metal wire is in a second planar spiral shape, a first end of the first connecting metal is electrically connected with the first connecting metal layer, a second end of the first connecting metal is electrically connected with a first end of the inductive metal wire; the first end of the inductive metal wire is one end, corresponding to a center point of the second planar spiral shape, of the inductive metal wire; the first end of the two-dimensional electron gas is one end, corresponding to a center point of the first planar spiral shape, of the two-dimensional electron gas.   
     
     
         19 . The preparation method according to  claim 18 , wherein before the forming the first connecting metal and the inductive metal wire on the side, away from the substrate, of the epitaxial structure, the preparation method further comprises:
 forming a first interlayer dielectric layer on the side, away from the substrate, of the epitaxial structure, a first through hole being formed in the first interlayer dielectric layer, and the first through hole exposing the first connecting metal layer;   wherein the forming the first connecting metal on the side, away from the substrate, of the epitaxial structure comprises:   metallizing the first through hole to form the first connecting metal.   
     
     
         20 . The preparation method according to  claim 19 , wherein before the forming the first connecting metal layer on the side, away from the substrate, of the epitaxial structure, the preparation method further comprises:
 forming a second interlayer dielectric layer on the side, away from the substrate, of the epitaxial structure, a first ohmic through hole and a second ohmic through hole being formed in the second interlayer dielectric layer, the first ohmic through hole exposing a first end of the two-dimensional electron gas, and the second ohmic through hole exposing a second end of the two-dimensional electron gas;   wherein when forming the first connecting metal layer on the side, away from the substrate, of the epitaxial structure, the preparation method further comprises:   metallizing the first ohmic through hole to form a first ohmic metallized through hole, forming a second connecting metal layer on the side, away from the substrate, of the epitaxial structure, and metallizing the second ohmic through hole to form a second ohmic metallized through hole; the first connecting metal layer being in ohmic contact with the first end of the two-dimensional electron gas through the first ohmic metallized through hole, the second connecting metal layer being in ohmic contact with the second end of the two-dimensional electron gas through the second ohmic metallized through hole;   wherein when forming a first interlayer dielectric layer on the side, away from the substrate, of the epitaxial structure, the preparation method further comprises:   forming the first interlayer dielectric layer with a second through hole, the second through hole exposing the second connecting metal layer;   wherein when metallizing the first through hole to form the first connecting metal, and forming the inductive metal wire on the side, away from the substrate, of the first interlayer dielectric layer, the preparation method further comprises:   forming a first electrode metal on the side, away from the substrate, of the first interlayer dielectric layer, metallizing the second through hole to form a second connecting metal, and forming a second electrode metal on the side, away from the substrate, of the first interlayer dielectric layer; wherein the first electrode metal is electrically connected with a second end of the inductive metal wire; a first end of the second connecting metal is electrically connected with the second connecting metal layer, and a second end of the second connecting metal is electrically connected with the second electrode metal.