Reaction chamber and semiconductor equipment

Abstract

The present disclosure provides a reaction chamber and semiconductor processing equipment. The reaction chamber includes an insulating chamber, a first heating body, a second heating body, and an isolation protection structure. The first heating body and the second heating body are arranged at an interval within the insulating chamber. The second heating body is provided with a carrier device for carrying a wafer. The isolation protection structure is arranged within the insulating chamber, located between the first heating body and the second heating body, forms a reaction space, and isolates the first heating body and the second heating body from the reaction space. An opening is arranged on a side of the isolation protection structure close to the second heating body, and the surface of the carrier device is exposed in the reaction space.

1 . A reaction chamber applied to semiconductor processing equipment comprising:
 an insulating chamber,   a first heating body arranged in the insulating chamber;   a second heating body arranged in the insulating chamber at an interval with the first heating body, a carrier device for carrying a wafer being arranged on the second heating body; and   an isolation protection structure arranged in the insulating chamber,   located between the first heating body and the second heating body, forming a reaction space, and isolating the first heating body and the second heating body from the reaction space, an opening being arranged on a side of the isolation protection structure close to the second heating body and configured to accommodate the carrier device, and a carrying surface of the carrier device being exposed in the reaction space.   
     
     
         2 . The reaction chamber according to  claim 1 , wherein the isolation protection structure includes:
 a first isolating member arranged at the second heating body, configured to cover a surface of the second heating body neighboring to the reaction space, and including the opening;   a second isolating member arranged at the first heating body and configured to cover a surface of the first heating body neighboring to the reaction space; and   two third isolating members arranged on two sides of the carrier device at an interval, and each third isolating member of the two third isolating members connecting between the second isolating member and the second heating body and extending along a gas flow direction from an inlet opening to an outlet opening, wherein:
 the inlet opening and the outlet opening are arranged on sidewalls on two sides of the insulating chamber; and 
 the inlet opening and the outlet opening communicate with the reaction space. 
   
     
     
         3 . The reaction chamber according to  claim 2 , wherein the carrier device includes:
 a rotation table located in the opening and rotatably connected to the second heating body through a rotating shaft and including:
 a protrusion table; 
 an edge member protruding relative to an outer peripheral wall of the protrusion table; and 
   a carrier plate for carrying the wafer arranged on the protrusion table of the rotation table, wherein:
 the first isolating member includes a first flange at an edge of the opening; and 
 the first flange partially overlaps with the edge member to shield a gap between the edge member and the first isolating member. 
   
     
     
         4 . The reaction chamber according to  claim 3 , wherein:
 two surfaces of the rotation table and the second heating body that face to each other are a conical concave surface and a conical convex surface and are arranged at an interval; and   an inlet channel is arranged in the second heating body for introducing a rotating drive gas into a gap between the conical concave surface and the conical convex surface to drive the rotation table to rotate.   
     
     
         5 . The reaction chamber according to  claim 4 , wherein the first isolating member includes:
 two first sub-isolating members located on an upstream side of the gas flow direction and symmetrically arranged relative to a radial centerline of the carrier device parallel to the gas flow direction;   a second sub-isolating member located on a downstream side of the gas flow direction and in a central area of the reaction space; and   two third sub-isolating members located on the downstream side of the gas flow direction on two edge areas on two sides of the central area of the reaction space and symmetrically arranged relative to the radial centerline of the carrier device parallel to the gas flow direction, wherein:
 the two first sub-isolating members, the one second sub-isolating member, and the two third sub-isolating members cooperate to form the opening; 
 the second sub-isolating member and the second heating body form an intermediate exhaust channel; 
 gaps between the two third sub-isolating members and the second sub-isolating member form edge exhaust channels; 
 an inlet end of the intermediate exhaust channel and inlet ends of the edge exhaust channels communicate with the gap between the conical concave surface and conical convex surface; and 
 an outlet end of the intermediate exhaust channel and outlet ends of the edge exhaust channels are located at one end of the second sub-isolating member away from the carrier device. 
   
     
     
         6 . The reaction chamber according to  claim 5 , wherein:
 a second flange is arranged at an edge of the second sub-isolating member neighboring to a third sub-isolating member and partially overlaps with the third sub-isolating member to shield a gap between the second sub-isolating member and the third sub-isolating member.   
     
     
         7 . The reaction chamber according to  claim 2 , wherein the first isolating member includes:
 a first inclined surface located upstream of the gas flow direction and joint with a lower end of the inlet opening, and a distance between the first inclined surface and the second isolating member gradually decreasing along the gas flow direction; and   a second inclined surface located downstream of the gas flow direction and joint with a lower end of the outlet opening, and a distance between the second inclined surface and the second isolating member gradually increasing along the gas flow direction.   
     
     
         8 . The reaction chamber according to  claim 7 , wherein:
 a opening size of the outlet opening gradually increases along the gas flow direction; and   a minimum opening size of the outlet opening is equal to an opening size of a conjunction of the reaction space with the outlet opening.   
     
     
         9 . The reaction chamber according to  claim 2 , wherein the second isolating member includes:
 a thermally conductive isolating plate made of a thermally conductive material; and   an isolating layer covering an entire outer surface of the thermally conductive isolating plate.   
     
     
         10 . The reaction chamber according to  claim 9 , wherein the thermally conductive material is graphite, and a material for forming the isolating layer includes silicon carbide. 
     
     
         11 . The reaction chamber according to  claim 2 , wherein the second isolating member and the third isolating member both include insulating isolating plates made of an insulating material. 
     
     
         12 . The reaction chamber according to  claim 1 , wherein:
 the first heating body and the second heating body are heated in an induction heating method;   the first heating body includes a flat member and an arc member;   the second heating body includes a flat member and an arc member;   the flat member of the first heating body and the flat member of the second heating body are arranged at an interval opposite to each other;   the flat member and the arc member form a hollow chamber; and   at least one isolating layer is arranged in the hollow chamber to isolate the hollow chamber to form a plurality of sub-hollow chambers and configured to cause heating temperatures at different positions of the first heating body and the second heating body to be consistent.   
     
     
         13 . The reaction chamber according to  claim 1 , wherein the insulating chamber is a cylindrical chamber formed by two semi-annular insulating covers and two disk-shaped insulating covers that are joined with each other. 
     
     
         14 . Semiconductor processing equipment comprising:
 a reaction chamber including:
 an insulating chamber, 
 a first heating body arranged in the insulating chamber; 
 a second heating body arranged in the insulating chamber at an interval with the first heating body, a carrier device for carrying a wafer being arranged on the second heating body; and 
 an isolation protection structure arranged in the insulating chamber, located between the first heating body and the second heating body, forming a reaction space, and isolating the first heating body and the second heating body from the reaction space, an opening being arranged on a side of the isolation protection structure close to the second heating body and configured to accommodate the carrier device, and a carrying surface of the carrier device being exposed in the reaction space; and 
   an induction coil for heating the reaction chamber, wound externally around the insulating chamber and configured for inductively heating the first heating body and the second heating body.   
     
     
         15 . The semiconductor processing equipment according to  claim 14 , wherein the semiconductor processing equipment is applied to an epitaxial growth process. 
     
     
         16 . The semiconductor processing equipment according to  claim 14 , wherein the isolation protection structure includes:
 a first isolating member arranged at the second heating body, configured to cover a surface of the second heating body neighboring to the reaction space, and including the opening;   a second isolating member arranged at the first heating body and configured to cover a surface of the first heating body neighboring the reaction space; and   two third isolating members arranged on two sides of the carrier device at an interval, and each third isolating member of the two third isolating members connecting between the second isolating member and the second heating body and extending along a gas flow direction from an inlet opening to an outlet opening, wherein:
 the inlet opening and the outlet opening are arranged on sidewalls on two sides of the insulating chamber; and 
 the inlet opening and the outlet opening communicate with the reaction space. 
   
     
     
         17 . The semiconductor processing equipment according to  claim 16 , wherein the carrier device includes:
 a rotation table located in the opening and rotatably connected to the second heating body through a rotating shaft and including:
 a protrusion table; 
 an edge member protruding relative to an outer peripheral wall of the protrusion table; and 
   a carrier plate for carrying the wafer arranged on the protrusion table of the rotation table, wherein:
 the first isolating member includes a first flange at an edge of the opening; and 
 the first flange partially overlaps with the edge member to shield a gap between the edge member and the first isolating member. 
   
     
     
         18 . The semiconductor processing equipment according to  claim 17 , wherein:
 two surfaces of the rotation table and the second heating body that face to each other are a conical concave surface and a conical convex surface and are arranged at an interval; and   an inlet channel is arranged in the second heating body for introducing a rotating drive gas into a gap between the conical concave surface and the conical convex surface to drive the rotation table to rotate.   
     
     
         19 . The semiconductor processing equipment according to  claim 18 , wherein the first isolating member includes:
 two first sub-isolating members located on an upstream side of the gas flow direction and symmetrically arranged relative to a radial centerline of the carrier device parallel to the gas flow direction;   a second sub-isolating member located on a downstream side of the gas flow direction and in a central area of the reaction space; and   two third sub-isolating member located on the downstream side of the gas flow direction on two edge areas on two sides of the central area of the reaction space and symmetrically arranged relative to the radial centerline of the carrier device parallel to the gas flow direction, wherein:
 the two first sub-isolating members, the one second sub-isolating member, and the two third sub-isolating members cooperate to form the opening; 
 the second sub-isolating member and the second heating body form an intermediate exhaust channel; 
 gaps between the two third sub-isolating members and the second sub-isolating member form edge exhaust channels; 
 an inlet end of the intermediate exhaust channel and inlet ends of the edge exhaust channels communicate with the gap between the conical concave surface and conical convex surface; and 
 an outlet end of the intermediate exhaust channel and outlet ends of the edge exhaust channels are located at one end of the second sub-isolating member away from the carrier device. 
   
     
     
         20 . The semiconductor processing equipment according to  claim 19 , wherein:
 a second flange is arranged at an edge of the second sub-isolating member neighboring to a third sub-isolating member and partially overlaps with the third sub-isolating member to shield a gap between the second sub-isolating member and the third sub-isolating member.