US2024387215A1PendingUtilityA1

Semiconductor apparatus and method of collecting residues

Assignee: TAIWAN SEMICONDUCTOR MFG CO LTDPriority: Aug 5, 2021Filed: Jul 26, 2024Published: Nov 21, 2024
Est. expiryAug 5, 2041(~15 yrs left)· nominal 20-yr term from priority
H10P 72/3312H10P 72/0436H10P 72/16H10P 72/12H10P 72/14H10P 72/0462H10P 72/0402H10P 72/0448H10P 72/04H01J 37/32715H01L 21/67757H01L 21/67115H01L 21/6732
63
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Claims

Abstract

A method for collecting residues of curable material includes: performing a curing process on a semiconductor wafer in a chamber, where the semiconductor wafer is held by a wafer cassette, and residues of curable material is formed in the chamber; and collecting the residues of curable material. A first portion of the residues dripping from a ceiling of the chamber is directed toward a tray using a flow-directing structure, where the flow-directing structure is below the ceiling of the chamber, the flow-directing structure includes a central opening and a slanted surface sloped to direct the first portion of the residues toward the central opening. The first portion of the residues is collected on a collecting surface of the tray which covers the central opening of the flow-directing structure.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method, comprising:
 performing a curing process on a semiconductor wafer in a chamber, wherein the semiconductor wafer is held by a wafer cassette, and residues of curable material is formed in the chamber; and   collecting the residues of curable material, comprising:
 directing a first portion of the residues of curable material dripping from a ceiling of the chamber toward a tray using a flow-directing structure, wherein the flow-directing structure is mounted below the ceiling of the chamber, the flow-directing structure comprises a central opening and a slanted surface sloped to direct the first portion of the residues of curable material toward the central opening; and 
 collecting the first portion of the residues of curable material on a collecting surface of the tray which covers the central opening of the flow-directing structure. 
   
     
     
         2 . The method of  claim 1 , wherein the tray is mounted on the wafer cassette and shields the wafer cassette to prevent dripping of the residues of curable material onto the semiconductor wafer. 
     
     
         3 . The method of  claim 1 , wherein collecting the residues of curable material further comprises:
 collecting a second portion of the residues of curable material dripping from an outer sidewall of the flow-directing structure on a collecting surface of a baffle ring which is mounted on the chamber.   
     
     
         4 . The method of  claim 3 , wherein a maximum lateral dimension of the baffle ring is greater than a maximum lateral dimension of the flow-directing structure so that the second portion of the residues of curable material is collected by the baffle ring. 
     
     
         5 . The method of  claim 1 , further comprising:
 moving the wafer cassette upwardly to position the collecting surface of the tray below the slanted surface of the flow-directing structure when the chamber is closed.   
     
     
         6 . The method of  claim 1 , further comprising:
 moving the wafer cassette downwardly when the chamber is open, wherein the tray is positioned within a baffle ring which is mounted on the chamber.   
     
     
         7 . The method of  claim 6 , wherein a bottom surface of the tray is substantially leveled with a bottom surface of the baffle ring when the tray is positioned within the baffle ring. 
     
     
         8 . The method of  claim 1 , further comprising:
 shielding the semiconductor wafer held by the wafer cassette through a sidewall extension of the tray to prevent dripping of the residues of curable material onto the semiconductor wafer, wherein the sidewall extension disposed around a bottom surface of the tray which faces the wafer cassette.   
     
     
         9 . A method, comprising:
 collecting residues of curable material formed in a chamber after a curing process is performed on a semiconductor wafer, wherein the chamber contains a wafer cassette carrying the semiconductor wafer, a collecting module is disposed in the chamber to collect the residues of curable material, wherein the collecting module comprises:
 a flow-directing structure mounted on an upper portion of the chamber, the flow-directing structure comprising a central opening and a slanted surface sloped to direct the residues of curable material toward the central opening; 
 a baffle ring mounted on a lower portion of the chamber; and 
 a tray shielding the wafer cassette and being movable together with the wafer cassette between the flow-directing structure and the baffle ring. 
   
     
     
         10 . The method of  claim 9 , wherein collecting the residues of curable material comprises:
 directing a portion of the residues of curable material dripping from the upper portion of the chamber toward the tray using the flow-directing structure.   
     
     
         11 . The method of  claim 9 , wherein collecting the residues of curable material comprises:
 collecting a portion of the residues of curable material on the tray which covers the central opening of the flow-directing structure.   
     
     
         12 . The method of  claim 9 , wherein collecting the residues of curable material comprises:
 collecting a portion of the residues of curable material dripping from an outer sidewall of the flow-directing structure on the baffle ring.   
     
     
         13 . The method of  claim 12 , wherein a collecting surface of the baffle ring is positioned right below the outer sidewall of the flow-directing structure. 
     
     
         14 . The method of  claim 9 , further comprising:
 moving the wafer cassette upwardly to position the tray below the slanted surface of the flow-directing structure when the chamber is closed.   
     
     
         15 . The method of  claim 9 , further comprising:
 moving the wafer cassette downwardly when the chamber is open, wherein the tray is positioned within the baffle ring.   
     
     
         16 . The method of  claim 15 , wherein a clearance is formed between a sidewall of the tray and an adjacent sidewall of the baffle ring after moving the wafer cassette downwardly. 
     
     
         17 . A method, comprising:
 collecting residues of curable material formed in a chamber using a collecting module after a curing process is performed on a semiconductor wafer, wherein the chamber contains a wafer cassette carrying the semiconductor wafer, and collecting the residues of curable material comprises:
 collecting a portion of the residues of curable dielectric material flowing along a slanted surface of a flow-directing structure of the collecting module toward a first hollow region of the flow-directing structure by a tray of the collecting module, wherein the tray is positioned below the first hollow region of the flow-directing structure and is mounted on the wafer cassette; and 
 collecting another second portion of the residues of curable dielectric material flowing along an outer sidewall of the flow-directing structure connected to the slanted surface by a baffle ring of the collecting module, wherein the baffle ring is positioned below the outer sidewall of the flow-directing structure. 
   
     
     
         18 . The method of  claim 17 , wherein the baffle ring comprises a second hollow region which allows the wafer cassette and the tray to pass through after collecting the residues of curable material. 
     
     
         19 . The method of  claim 17 , further comprising:
 closing a door of the chamber;   moving the wafer cassette which carries the semiconductor wafer to be positioned in the chamber; and   applying a thermal energy to cure the semiconductor wafer before collecting the residues of curable material.   
     
     
         20 . The method of  claim 17 , further comprising:
 lowering down the wafer cassette which carries the semiconductor wafer when the chamber is in a door-open state, wherein the tray is positioned within the baffle ring.

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