Retaining ring for chemical mechanical polishing

Abstract

A retaining ring used for chemical mechanical processing, includes a thermally conductive material formed by a base material and a material filler. The material filler is between 10% and 70% by weight of the material of the retaining ring.

1 . A retaining ring for chemical mechanical processing, comprising:
 a thermally conductive material formed by a base material and a material filler,   wherein the material filler is between 10% and 70% by weight of the material of the retaining ring.   
     
     
         2 . The retaining ring according to  claim 1 , wherein a thermal conductivity of the thermally conductive material in a through plane of the retaining ring is between 0.5 W/mk and 40 W/mk. 
     
     
         3 . The retaining ring according to  claim 2 , wherein the thermal conductivity of the thermally conductive material in the through plane of the retaining ring is between 2.0 W/mk and 40 W/mk. 
     
     
         4 . The retaining ring according to  claim 1 , wherein the material filler includes at least one of carbon, glass, polyimide, PAI, TiO 2 , ceramic, silica, alumina, boron nitride, diamond, aramid, aluminum oxide, aluminum nitride, pitch carbon fiber, PAN carbon fiber, pitch graphite fiber, graphite fiber, and graphite. 
     
     
         5 . The retaining ring according to  claim 1 , wherein the base material is a thermoplastic including at least one of PEEK, PPS, PET, PI, PAI, PK, PAEK, PTFE, PPA, LCP, PBT, nylon, TPU, polyolefin, or similar polymers. 
     
     
         6 . The retaining ring according to  claim 1 , wherein the thermally conductive material is a crosslinked polymer. 
     
     
         7 . The retaining ring according to  claim 1 , wherein the material filler is between 20% and 40% by weight of the material of the retaining ring. 
     
     
         8 . The retaining ring according to  claim 7 , wherein the material filler includes at least one of carbon, glass, polyimide, PAI, TiO 2 , ceramic, silica, alumina, boron nitride, diamond, aramid, aluminum oxide, aluminum nitride, pitch carbon fiber, PAN carbon fiber, pitch graphite fiber, graphite fiber, and graphite. 
     
     
         9 . The retaining ring according to  claim 4 , wherein the material filler is boron nitride. 
     
     
         10 . The retaining ring according to  claim 9 , wherein the material filler is between 20% and 40% by weight of the material of the retaining ring. 
     
     
         11 . The retaining ring according to  claim 4 , wherein the base material is a thermoplastic including at least one of PEEK, PPS, PET, PI, PAI, PK, PAEK, PTFE, PPA, LCP, PBT, nylon, TPU, polyolefin, or similar polymers. 
     
     
         12 . A chemical mechanical polishing system comprising:
 a platen;   a polishing pad disposed on the platen;   a slurry distribution system configured to supply a polishing slurry on the polishing pad;   a carrier head configured to hold a wafer; and   a retaining ring configured to keep the wafer in place on a housing of the carrier head,   wherein at least one of the platen and the carrier head is configured to rotate,   wherein the retaining ring comprises a thermally conductive material formed by a base material and a material filler, and   wherein the material filler is between 10% and 70% by weight of the material of the retaining ring.   
     
     
         13 . A chemical mechanical polishing method comprising:
 holding a wafer on a carrier head;   securing the wafer on a housing of the carrier head using a retaining ring;   providing a polishing pad on a platen;   supplying a polishing slurry on the polishing pad; and   polishing the wafer by rotating at least one of the platen and the carrier head, and applying a pressure between the wafer and the polishing pad,   wherein the retaining ring comprises a thermally conductive material formed by a base material and a material filler, and   wherein the material filler is between 10% and 70% by weight of the material of the retaining ring.   
     
     
         14 . The method according to  claim 13 , wherein the wafer is made of GaAs or SiC.