Topological Qubits, Registers, and Methods

Abstract

A topological quantum register comprises an array of topological qubits on a substrate. A reconfigurable quantum register also comprises an electrically conducting lead connecting each quantum bit to at least one other quantum bit and has a solid state switch. A topological quantum register also has means for determining quantum states of the quantum bits simultaneously, means for establishing a superposition state in each of the quantum bits; and a computer in communication with each of said solid state switches.

1 . A topological quantum register comprising an array of topological qubits on a substrate, wherein each of said topological qubits comprises a topological quantum nanoparticle electrically coupled to a pulsing lead, said pulsing lead being configured to pulse said topological quantum nanoparticle with an electrical potential, and means for determining the states of said topological qubits simultaneously
 wherein said topological quantum nanoparticle is a transition metal dichalcogenide (TMD) nanoplatelet having a topology that creates at least two degenerate charge parity protected quantum states exhibiting spin current flows and   wherein said means for determining the states of said topological qubits simultaneously comprises detecting a direction of spin current flows exhibited by each said TMD nanoplatelet.   
     
     
         2 . The topological quantum register of  claim 1 , wherein said spin current flows of said topological qubits are entangled by proximity of said topological quantum qubits to one another. 
     
     
         3 . The topological quantum register of  claim 1 , wherein said spin current flows of said topological qubits are entangled by connecting leads forming electrical connections between said topological qubits. 
     
     
         4 . The topological quantum register of  claim 3 , wherein one or more of said electrical connections between said topological qubits comprises a solid state switch. 
     
     
         5 . The topological quantum register of  claim 4 , further comprising an electrical connection between said solid state switch and a computer and wherein said solid state switch is controlled by said computer. 
     
     
         6 . The topological quantum register of  claim 1 , wherein said means for determining the states of said topological qubits simultaneously is a voltammetric means, a current measuring means, a capacitance means, an inductance means, a polarization detecting means, or a SQUID means. 
     
     
         7 . The topological quantum register of  claim 5 , wherein said computer controls said means for determining quantum states of said quantum bits simultaneously and said pulsing lead. 
     
     
         8 . The topological quantum register of  claim 5 , wherein said solid state switch is operable to be controlled by said computer when said solid state switch is at a temperature greater than 70 K. 
     
     
         9 . A method for making a quantum register comprising an array of qubits, said method comprising:
 providing a substrate comprising an array of back gate electrodes;   positioning a topological quantum nanoparticle in contact with or in apposition to each of a plurality of said back gate electrodes so as to electrically connect said topological quantum nanoparticles to said plurality of said back gate electrodes;   depositing electrically conducting leads onto the substrate in relation to said topological quantum nanoparticles to form sensors for determining quantum states of said topological quantum nanoparticles simultaneously   wherein said topological quantum nanoparticle is a transition metal dichalcogenide (TMD) nanoplatelet having a topology that creates at least two degenerate charge parity protected quantum states exhibiting spin current flows and   wherein said means for determining the states of said topological qubits simultaneously comprises detecting a direction of spin current flows exhibited by each said TMD nanoplatelet.   
     
     
         10 . The method of  claim 9 , wherein said back gate electrodes are embodied as a single electrode partially covered by an electrical insulator to expose said array of back gate electrodes. 
     
     
         11 . The method of  claim 9 , wherein said substrate comprises a silicon wafer having a surface layer of an electrical insulator. 
     
     
         12 . The method of  claim 11 , and further comprising:
 covering said substrate and back gate electrodes with a resist layer or photoresist layer, and forming a hole pattern in the resist or photoresist layer above said back gate electrodes using photolithography   wherein said positioning a topological quantum nanoparticle comprises placing a conductive electrode in contact with a suspension of topological quantum nanoparticles on said substrate and   applying a bias voltage between the conductive electrode and the back gate electrodes to guide said topological quantum nanoparticles toward the back gate electrodes.   
     
     
         13 . The method of  claim 9 , and further comprising covering said substrate and back gate electrodes with an insulating layer and forming holes in the insulating layer above said back gate electrodes,
 wherein said positioning a topological quantum nanoparticle comprises applying a suspension of topological quantum nanoparticles onto said substrate and applying a potential to said back gate electrodes to direct said topological quantum nanoparticle into one of said holes.   
     
     
         14 . The method of  claim 9 , and further comprising individually testing the functionality of the qubits.