Spin-on carbon hard mask composition with high planarization performance and patterning method using same

Abstract

The present invention relates to a spin-on carbon hard mask composition with higher planarization performance, which is useful in semiconductor lithography processes, and a patterning method using same. The composition according to the present invention contains the 3′,6′-Dihydroxy-3H-spiro[2-benzofuran-1,9′-xanthen]-3-one derivative polymer represented by the following chemical formula 1, an organic solvent, and a surfactant and exhibits excellent effects including excellent solubility, uniform coating performance, high etch-resistance enduring multi-etch processes, excellent mechanical properties, and high planarization properties.

1 . A spin-on hardmask composition with high planarization properties, the hardmask composition comprising:
 a 3′,6′-dihydroxy-3H-spiro[2-benzofuran-1,9′-xanthen]-3-one derivative polymer represented by Formula 1 shown below;   an organic solvent; and   a surfactant,   
       
         
           
           
               
               
           
         
         wherein in Formula 1 shown above, l, m, and n are in ranges of 1≤l≤20, 1≤m≤40, and 1≤n≤20, respectively, 
         R 1  comprises any one among hydrogen (H), a hydroxy group (OH), a ketone group (CO), an ether group (COC), an aldehyde group (CHO), 
       
       
         
           
           
               
               
           
         
         R 2  comprises any one among 
       
       
         
           
           
               
               
           
         
       
       and
 R 3  comprises any one among hydrogen (H), a hydroxy group (OH), 
 
       
         
           
           
               
               
           
         
       
     
     
         2 . The hardmask composition of  claim 1 , wherein the hardmask composition comprising the polymer having a weight average molecular weight in a range of 1,000 to 5,000 exhibits a planarity of 20% or less at a thickness of 4,000 Å or smaller. 
     
     
         3 . The hardmask composition of  claim 2 , wherein the polymer has a weight average molecular weight in a range of 1,000 to 4,000. 
     
     
         4 . The hardmask composition of  claim 3 , wherein the polymer has a weight average molecular weight in a range of 1,500 to 3,000. 
     
     
         5 . The hardmask composition of  claim 1 , wherein the polymer, the surfactant, and the organic solvent account for 1 to 50 wt %, greater than 0 to 2 wt %, and 50 to 99 wt %, respectively, based on the total weight of the hardmask composition. 
     
     
         6 . The hardmask composition of  claim 1 , wherein the organic solvent is one or a mixture of two or more selected from the group consisting of propyleneglycolmonomethylether (PGME), propyleneglycolmonomethylether acetate (PGMEA), cyclohexanone (CHN), cyclopentanone (CPN), γ-butyrolactone (GBL), ethyllactate (EL), methylethylketone (MEK), n-butylacetate, N-methylpyrrolidone (NMP), methyl 3-methoxypropionate (MMP), and ethyl 3-ethoxypropionate (EEP). 
     
     
         7 . The hardmask composition of  claim 1 , wherein the surfactant is one or a mixture of two or more selected from the group consisting of polyacrylates, polyfluorocarbons, polysiloxanes, polyoxyethylenealkylethers, polyoxyethylenealkylphenylethers, polyoxyethylenenonylphenylethers, polyoxyethyleneoctylphenylethers, polyoxyethylenepolyoxypropylenes, polyoxyethylenelaurylethers, or polyoxyethylenesorbitans. 
     
     
         8 . A patterning method comprising:
 performing a coating process of an upper portion of a layer to be etched with the hardmask composition of  claim 1  through spin coating; and   performing a baking process to form a hardmask layer.   
     
     
         9 . The patterning method of  claim 8 , wherein the baking process is performed at a temperature in a range of 150° C. to 400° C. for 1 to 5 minutes to form the hardmask layer.