US2025022732A1PendingUtilityA1

Wafer-like sensor

Assignee: CYBEROPTICS CORPPriority: Nov 14, 2018Filed: Aug 21, 2024Published: Jan 16, 2025
Est. expiryNov 14, 2038(~12.3 yrs left)· nominal 20-yr term from priority
H10P 74/277H10P 72/0612H10P 74/207H10P 74/238H10P 72/0602H10P 72/06H10P 72/0604B32B 17/10981B32B 17/10899B32B 17/10651B32B 17/10733B32B 17/1044B32B 17/1055B32B 17/10137B32B 17/10036G05B 19/41875G05B 2219/32179H01L 22/34H01L 21/67276
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Claims

Abstract

A wafer-like semiconductor sensor includes a wafer-like base formed of a plurality of layers of chemically-hardened glass and an electronics module mounted to a recessed pocket in the base and containing a sensor.

Claims

exact text as granted — not AI-modified
1 . A wafer-like substrate, comprising:
 an upper annular layer formed of chemically-hardened glass;   a lower layer formed of chemically-hardened glass; and   wherein the annular upper layer is chemically bonded to the lower layer.   
     
     
         2 . The wafer-like substrate of  claim 1 , wherein the upper annular layer has an inner perimeter defining a region configured to seat an electronics module. 
     
     
         3 . The wafer-like substrate of  claim 1 , wherein the upper annular layer has a thickness of 0.4 mm. 
     
     
         4 . The wafer-like substrate of  claim 1 , wherein in the lower layer has a thickness of 0.4 mm. 
     
     
         5 . The wafer-like substrate of  claim 1 , and further comprising an opaque coating interposed between the upper annular layer and the lower layer. 
     
     
         6 . The wafer-like substrate of  claim 1 , and further comprising an anti-shatter layer interposed between the upper annular layer and the lower layer. 
     
     
         7 . The wafer-like substrate of  claim 1 , wherein an outer perimeter of the upper annular layer has a SEMI notch. 
     
     
         8 . The wafer-like substrate of  claim 1 , wherein an outer perimeter of the lower layer has a SEMI notch. 
     
     
         9 . The wafer of  claim 1 , and further including a recess having a thickness of 0.4 mm. 
     
     
         10 . The wafer-like substrate of  claim 1 , wherein the upper annular layer is chemically bonded to the lower layer with epoxy. 
     
     
         11 . A method of making a wafer-like sensor, the method comprising:
 providing a chemically-hardened base glass layer;   providing a chemically-hardened upper annular glass layer;   bonding the chemically-hardened base glass layer to the chemically-hardened annular glass layer to provide a chemically-hardened wafer-like substrate having a recessed pocket; and   mounting an electronics housing within the recessed pocket.   
     
     
         12 . The method of  claim 11 , and further comprising applying an anti-shatter layer to at least one of the chemically-hardened base glass layer and the chemically-hardened annular glass layer. 
     
     
         13 . The method of  claim 11 , and further comprising applying an opaque coating to at least one of the chemically-hardened base glass layer and the chemically-hardened annular glass layer. 
     
     
         14 . The wafer-like substrate of  claim 1 , wherein the upper annular layer and the lower layer form a recess. 
     
     
         15 . The wafer-like substrate of  claim 14 , wherein the recess is positioned proximate a center of the lower layer. 
     
     
         16 . The wafer-like substrate of  claim 14 , and further comprising a housing disposed within the recess. 
     
     
         17 . The wafer-like substrate of  claim 16 , and further comprising a camera disposed within the housing. 
     
     
         18 . The wafer-like substrate of  claim 16 , and further comprising a sensor disposed within the housing. 
     
     
         19 . The wafer-like substrate of  claim 1 , wherein at least a portion of the wafer-like substrate includes a transparent portion. 
     
     
         20 . The wafer-like substrate of  claim 19 , wherein the transparent portion is proximate a housing disposed within a recess formed by the annular layer and the lower layer.

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