Method for preparing semiconductor device, array substrate and display panel

Abstract

A method for preparing a semiconductor device includes: forming a metal oxide semiconductor layer on a substrate; forming a second insulating dielectric layer on a side of the metal oxide semiconductor layer away from the substrate; wherein further including: forming a metal oxide isolation layer on a side of the second insulating dielectric layer away from the substrate; wherein the metal oxide isolation layer is in contact with a surface of the second insulating dielectric layer away from the substrate, a concentration of elemental oxygen in the metal oxide isolation layer is greater than a concentration of elemental oxygen in the second insulating dielectric layer, and the concentration of elemental oxygen in the second insulating dielectric layer is greater than a concentration of elemental oxygen in the metal oxide semiconductor layer. An array substrate and a display panel are also provided.

What is claimed is: 
     
         1 . A method for preparing a semiconductor device, comprising:
 forming a metal oxide semiconductor layer on a substrate;   forming a second insulating dielectric layer on a side of the metal oxide semiconductor layer away from the substrate; and   forming a metal oxide isolation layer on a side of the second insulating dielectric layer away from the substrate; wherein the metal oxide isolation layer is in contact with a surface of the second insulating dielectric layer away from the substrate, a concentration of elemental oxygen in the metal oxide isolation layer is greater than a concentration of elemental oxygen in the second insulating dielectric layer, and the concentration of elemental oxygen in the second insulating dielectric layer is greater than a concentration of elemental oxygen in the metal oxide semiconductor layer.   
     
     
         2 . The method for preparing a semiconductor device according to  claim 1 , wherein the metal element of the metal oxide semiconductor layer comprises one or more of In, Ga, Zn, and Sn; and/or, the metal element of the metal oxide isolation layer comprises one or more of In, Ga, Zn, and Sn. 
     
     
         3 . The method for preparing a semiconductor device according to  claim 1 , wherein the forming a metal oxide isolation layer on a side of the second insulating dielectric layer away from the substrate comprises:
 forming the metal oxide isolation layer by sputtering on the surface of the second insulating dielectric layer away from the substrate in an atmosphere containing oxygen; wherein the oxygen flow rate in the atmosphere containing oxygen accounts for more than or equal to 7% of the entire atmosphere.   
     
     
         4 . The method for preparing a semiconductor device according to  claim 1 , further comprising:
 annealing the metal oxide isolation layer.   
     
     
         5 . The method for preparing a semiconductor device according to  claim 4 , wherein the annealing the metal oxide isolation layer is performed under dry compressed air. 
     
     
         6 . The method for preparing a semiconductor device according to  claim 4 , wherein the metal elements of the metal oxide semiconductor layer comprise In, Ga, and Zn, and the In element content is the same as the monomer content of other metal elements; the metal oxide isolation layer is a film structure with an In:Ga:Zn ratio range of 1˜8:1˜8:1˜8, the time range for annealing the metal oxide isolation layer is 45 min-75 min, and the annealing temperature range is 300° C.-450° C.; or
 the metal elements of the metal oxide semiconductor layer comprise In, Ga, Zn, and Sn, and the In element content is higher than the monomer content of other metal elements; the metal oxide isolation layer is a film structure with an In:Ga:Zn ratio range of 1˜8:1˜8:1˜8, the time range for annealing the metal oxide isolation layer is 45 min-75 min, and the annealing temperature range is 260° C.-350° C. 
 
     
     
         7 . The method for preparing a semiconductor device according to  claim 1 , further comprising: removing the metal oxide isolation layer. 
     
     
         8 . The method for preparing a semiconductor device according to  claim 7 , wherein the semiconductor device is a thin film transistor, and the method further comprises:
 forming a top gate electrode on the side of the second insulating dielectric layer away from the substrate after removing the metal oxide isolation layer.   
     
     
         9 . The method for preparing a semiconductor device according to  claim 7 , wherein the semiconductor device is a thin film transistor, and the method further comprises:
 forming sequentially a bottom gate electrode and a first insulating dielectric layer on the substrate before forming the metal oxide semiconductor layer on the substrate.   
     
     
         10 . An array substrate, comprising a semiconductor device, wherein the semiconductor device is prepared by a method, comprising:
 forming a metal oxide semiconductor layer on a substrate;   forming a second insulating dielectric layer on a side of the metal oxide semiconductor layer away from the substrate; and   forming a metal oxide isolation layer on a side of the second insulating dielectric layer away from the substrate; wherein the metal oxide isolation layer is in contact with a surface of the second insulating dielectric layer away from the substrate, a concentration of elemental oxygen in the metal oxide isolation layer is greater than a concentration of elemental oxygen in the second insulating dielectric layer, and the concentration of elemental oxygen in the second insulating dielectric layer is greater than a concentration of elemental oxygen in the metal oxide semiconductor layer.   
     
     
         11 . The array substrate according to  claim 10 , wherein the metal element of the metal oxide semiconductor layer comprises one or more of In, Ga, Zn, and Sn; and/or, the metal element of the metal oxide isolation layer comprises one or more of In, Ga, Zn, and Sn. 
     
     
         12 . The array substrate according to  claim 10 , wherein the forming a metal oxide isolation layer on a side of the second insulating dielectric layer away from the substrate comprises:
 forming the metal oxide isolation layer by sputtering on the surface of the second insulating dielectric layer away from the substrate in an atmosphere containing oxygen; wherein the oxygen flow rate in the atmosphere containing oxygen accounts for more than or equal to 7% of the entire atmosphere.   
     
     
         13 . The array substrate according to  claim 10 , wherein the method further comprises: annealing the metal oxide isolation layer. 
     
     
         14 . The array substrate according to  claim 13 , wherein the metal elements of the metal oxide semiconductor layer comprise In, Ga, and Zn, and the In element content is the same as the monomer content of other metal elements; the metal oxide isolation layer is a film structure with an In:Ga:Zn ratio range of 1˜8:1˜8:1˜8, the time range for annealing the metal oxide isolation layer is 45 min-75 min, and the annealing temperature range is 300° C.-450° C.; or
 the metal elements of the metal oxide semiconductor layer comprise In, Ga, Zn, and Sn, and the In element content is higher than the monomer content of other metal elements; the metal oxide isolation layer is a film structure with an In:Ga:Zn ratio range of 1˜8:1˜8:1˜8, the time range for annealing the metal oxide isolation layer is 45 min-75 min, and the annealing temperature range is 260° C. −350° C. 
 
     
     
         15 . The array substrate according to  claim 10 , wherein the method further comprises: removing the metal oxide isolation layer. 
     
     
         16 . A display panel, comprising:
 an array substrate; and   a light emitting layer, disposed on a side of the array substrate and electrically connected to the array substrate;   wherein the array substrate comprises a semiconductor device prepared by a method comprising:   forming a metal oxide semiconductor layer on a substrate;   forming a second insulating dielectric layer on a side of the metal oxide semiconductor layer away from the substrate; and   forming a metal oxide isolation layer on a side of the second insulating dielectric layer away from the substrate; wherein the metal oxide isolation layer is in contact with a surface of the second insulating dielectric layer away from the substrate, a concentration of elemental oxygen in the metal oxide isolation layer is greater than a concentration of elemental oxygen in the second insulating dielectric layer, and the concentration of elemental oxygen in the second insulating dielectric layer is greater than a concentration of elemental oxygen in the metal oxide semiconductor layer.   
     
     
         17 . The display panel according to  claim 16 , wherein the metal element of the metal oxide semiconductor layer comprises one or more of In, Ga, Zn, and Sn; and/or, the metal element of the metal oxide isolation layer comprises one or more of In, Ga, Zn, and Sn. 
     
     
         18 . The display panel according to  claim 16 , wherein the forming a metal oxide isolation layer on a side of the second insulating dielectric layer away from the substrate comprises:
 forming the metal oxide isolation layer by sputtering on the surface of the second insulating dielectric layer away from the substrate in an atmosphere containing oxygen; wherein the oxygen flow rate in the atmosphere containing oxygen accounts for more than or equal to 7% of the entire atmosphere.   
     
     
         19 . The display panel according to  claim 16 , wherein the method further comprises: annealing the metal oxide isolation layer. 
     
     
         20 . The display panel according to  claim 16 , wherein the method further comprises: removing the metal oxide isolation layer.