Chip electrical property detection device and method of manufacturing the same

Abstract

A chip electrical property detection device and a method of manufacturing the same are provided. The chip electrical property detection device includes a structural strengthening module, an electrical detection module and a flexible buffer structure. The structural strengthening module includes a structural strengthening substrate. The flexible buffer structure includes a flexible buffer material layer. The structural strengthening module, the electrical detection module and the flexible buffer structure are configured to cooperate with each other to form the chip electrical property detection device. The probe carrying substrate is disposed on the flexible buffer material layer, and the electrical detection structures are respectively disposed on the probe carrying substrate and electrically connected to the electrical connection structures. The probe carrying substrate can be configured to be slightly adjusted through the flexible buffer material layer, thereby allowing each electrical detection structure to be slightly adjusted following the probe carrying substrate.

What is claimed is: 
     
         1 . A chip electrical property detection device, comprising:
 a structural strengthening module including a structural strengthening substrate;   an electrical detection module including a probe carrying substrate, a plurality of electrical detection structures and a plurality of electrical connection structures; and   a flexible buffer structure including a flexible buffer material layer;   wherein the structural strengthening module, the electrical detection module and the flexible buffer structure are configured to cooperate with each other to form the chip electrical property detection device;   wherein the probe carrying substrate is disposed on the flexible buffer material layer, and the electrical detection structures are respectively disposed on the probe carrying substrate and electrically connected to the electrical connection structures.   
     
     
         2 . The chip electrical property detection device according to  claim 1 ,
 wherein each of the electrical detection structures includes a first electrical detection probe and a second electrical detection probe;   wherein the probe carrying substrate is configured to be allowed to be slightly adjusted through the flexible buffer material layer, thereby allowing each of the electrical detection structures to be configured to be slightly adjusted following the probe carrying substrate.   
     
     
         3 . The chip electrical property detection device according to  claim 1 ,
 wherein the structural strengthening substrate of the structural strengthening module is configured to carry a plurality of functional chips;   wherein the flexible buffer material layer is configured as a prefabricated polymer material layer, and the prefabricated polymer material layer is a silicone layer or an epoxy layer;   wherein the structural strengthening substrate is configured as a first silicon wafer substrate, and the probe carrying substrate is configured as a second silicon wafer substrate.   
     
     
         4 . The chip electrical property detection device according to  claim 1 ,
 wherein each of the electrical detection structures includes a first electrical detection probe and a second electrical detection probe;   wherein, when the chip electrical property detection device is configured to detect a plurality of chips, the chip electrical property detection device is configured to be moved downward through a downward pressure provided by a flexible pressing device, so that the first electrical detection probe and the second electrical detection probe of each of the electrical detection structures respectively and electrically contact two conductive pads of a corresponding one of the chips.   
     
     
         5 . The chip electrical property detection device according to  claim 1 ,
 wherein each of the electrical detection structures includes a first electrical detection probe and a second electrical detection probe;   wherein the probe carrying substrate includes a plurality of movable carrying plates, and the movable carrying plates are separate from each other and disposed on the flexible buffer material layer;   wherein the first electrical detection probe and the second electrical detection probe of each of the electrical detection structures are respectively disposed on two corresponding ones of the movable carrying plates of the probe carrying substrate;   wherein two adjacent ones of the movable carrying plates are separate from each other by a predetermined distance, and an outer surrounding surface of each of the movable carrying plates is a surrounding cutting surface formed by cutting;   wherein the movable carrying plates are separately disposed on a bottom side of the flexible buffer material layer, and each of the movable carrying plates is configured to be allowed to be slightly adjusted through the flexible buffer material layer, thereby allowing each of the electrical detection structures to be configured to be slightly adjusted following the flexible buffer material layer.   
     
     
         6 . A method of manufacturing a chip electrical property detection device, comprising:
 providing a structural strengthening module, wherein the structural strengthening module includes a structural strengthening substrate;   providing an electrical detection module, wherein the electrical detection module includes a probe carrying substrate, a plurality of electrical detection structures and a plurality of electrical connection structures;   providing a flexible buffer structure, wherein the flexible buffer structure includes a flexible buffer material layer; and   cooperating the structural strengthening module, the electrical detection module and the flexible buffer structure with each other to form the chip electrical property detection device;   wherein the probe carrying substrate is disposed on the flexible buffer material layer, and the electrical detection structures are respectively disposed on the probe carrying substrate and electrically connected to the electrical connection structures.   
     
     
         7 . The method according to  claim 6 ,
 wherein each of the electrical detection structures includes a first electrical detection probe and a second electrical detection probe;   wherein the probe carrying substrate is configured to be allowed to be slightly adjusted through the flexible buffer material layer, thereby allowing each of the electrical detection structures to be configured to be slightly adjusted following the probe carrying substrate.   
     
     
         8 . The method according to  claim 6 ,
 wherein the structural strengthening substrate of the structural strengthening module is configured to carry a plurality of functional chips;   wherein the flexible buffer material layer is configured as a prefabricated polymer material layer, and the prefabricated polymer material layer is a silicone layer or an epoxy layer;   wherein the structural strengthening substrate is configured as a first silicon wafer substrate, and the probe carrying substrate is configured as a second silicon wafer substrate.   
     
     
         9 . The method according to  claim 6 ,
 wherein each of the electrical detection structures includes a first electrical detection probe and a second electrical detection probe;   wherein, when the chip electrical property detection device is configured to detect a plurality of chips, the chip electrical property detection device is configured to be moved downward through a downward pressure provided by a flexible pressing device, so that the first electrical detection probe and the second electrical detection probe of each of the electrical detection structures respectively and electrically contact two conductive pads of a corresponding one of the chips.   
     
     
         10 . The method according to  claim 6 ,
 wherein each of the electrical detection structures includes a first electrical detection probe and a second electrical detection probe;   wherein the probe carrying substrate includes a plurality of movable carrying plates, and the movable carrying plates are separate from each other and disposed on the flexible buffer material layer;   wherein the first electrical detection probe and the second electrical detection probe of each of the electrical detection structures are respectively disposed on two corresponding ones of the movable carrying plates of the probe carrying substrate;   wherein two adjacent ones of the movable carrying plates are separate from each other by a predetermined distance, and an outer surrounding surface of each of the movable carrying plates is a surrounding cutting surface formed by cutting;   wherein the movable carrying plates are separately disposed on a bottom side of the flexible buffer material layer, and each of the movable carrying plates is configured to be allowed to be slightly adjusted through the flexible buffer material layer, thereby allowing each of the electrical detection structures to be configured to be slightly adjusted following the flexible buffer material layer.