Electromagnetic wave attenuation film and manufacturing method of same
Abstract
A electromagnetic wave attenuation film includes a substrate provided with a dielectric substrate having a front surface and a back surface, and thin film conductive layers arranged on both the front surface and the back surface of the electromagnetic wave attenuation substrate; a support layer arranged on the back surface of the electromagnetic wave attenuation substrate; and a flat plate inductor arranged on the back surface of the support layer; wherein the thin film conductive layers include a plurality of conductive elements. Furthermore, the conductive elements are arranged periodically, and when a distance in a plane direction between a center of gravity of the conductive elements on the front surface and the back surface is 1, and a shortest distance from the center of gravity of the conductive elements to a plate end portion is a, equation (1) below may be satisfied. I≤5.2a . . . (1)
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . An electromagnetic wave attenuation film, comprising:
an electromagnetic wave attenuation substrate provided with a dielectric substrate having a front surface and a back surface, and thin film conductive layers arranged on both the front surface and the back surface of the electromagnetic wave attenuation substrate; a support layer arranged on the back surface of the electromagnetic wave attenuation substrate; and a flat plate inductor arranged on a back surface of the support layer; wherein the thin film conductive layers include a plurality of conductive elements.
2 . The electromagnetic wave attenuation film of claim 1 , wherein
the conductive elements are arranged periodically, and when a distance in a plane direction between a center of gravity of the conductive elements on the front surface and the back surface of the dielectric substrate is 1, and a shortest distance from the center of gravity of the conductive elements to a plate end portion is a, equation (1) below is satisfied.
I
≦
5.2
a
(
1
)
3 . The electromagnetic wave attenuation film of claim 1 , wherein
the conductive elements are arranged periodically, and when a thickness of the conductive elements is T, and a skin depth is d, equation (4) below is satisfied.
-
2
≦
ln
(
T
/
d
)
≦
1
(
4
)
4 . The electromagnetic wave attenuation film of claim 1 , wherein
the conductive elements are arranged periodically, and when a distance in a plane direction between a center of gravity of the conductive elements on the front surface and the back surface of the dielectric substrate is 1, and a shortest distance from the center of gravity of the conductive elements to a plate end portion is a, electromagnetic wave attenuation performance is exhibited at multiple frequencies as a result of mixing a combination of conductive elements on the front surface and the back surface of the dielectric substrate satisfying equation (6) below, and a combination of conductive elements on the front surface and the back surface of the dielectric substrate satisfying equation (7) below.
I
<
2
a
(
6
)
I
≧
2
a
(
7
)
5 . The electromagnetic wave attenuation film of claim 1 , wherein
a front surface and a back surface of the thin film conductive layer on the front surface of the dielectric substrate is provided with a blackening layer.
6 . The electromagnetic wave attenuation film of claim 1 , wherein
a front surface and a back surface of the thin film conductive layer on the back surface of the dielectric substrate is provided with a blackening layer.
7 . The electromagnetic wave attenuation film of claim 1 , wherein
the thin film conductive layers are capable of capturing an electromagnetic wave incident from a front surface side of the dielectric substrate.
8 . The electromagnetic wave attenuation film of claim 1 , wherein
the conductive elements are planar elements and have a pair of opposing sides.
9 . The electromagnetic wave attenuation film of claim 1 , wherein
a thickness of the dielectric substrates is less than one-tenth of an attenuation center wavelength.
10 . The electromagnetic wave attenuation film of claim 2 , wherein
a size of the conductive elements on the front surface of the dielectric substrate is smaller than a size of the conductive elements on the back surface of the dielectric substrate and have absorption peak frequencies that are different from each other.
11 . The electromagnetic wave attenuation film of claim 10 , wherein
an absorption peak frequency ratio between the absorption peak frequencies that are different from each other is 1.153 or more.
12 . A manufacturing method of an electromagnetic wave attenuation film, comprising the steps of:
a step for performing simultaneous front and back formation of a predetermined repeating pattern formed of a plurality of conductive elements on a front surface of a dielectric substrate (hereinafter referred to as “front surface pattern”), and a predetermined repeating pattern formed of a plurality of conductive elements on a back surface of the dielectric substrate (hereinafter referred to as “back surface pattern”); a step for laminating a support layer on the back surface of the dielectric substrate on which patterns have been formed on the front and back; and a step for forming a flat plate inductor on a back surface of the support layer.
13 . The manufacturing method of an electromagnetic wave attenuation film of claim 12 , further comprising
a step for attaching, to the back surface of the dielectric substrate on which the front surface pattern and the back surface pattern have been formed, a front surface of the support layer on which the flat plate inductor has been formed.
14 . The manufacturing method of an electromagnetic wave attenuation film of claim 12 , wherein
a shape and/or a position of the front surface pattern and the back surface pattern are different from each other.
15 . The manufacturing method of an electromagnetic wave attenuation film of claim 12 , wherein
the front surface pattern and the back surface pattern are formed by a photolithography method.Join the waitlist — get patent alerts
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