A micro led panel with re-growth layer and manufacturing method thereof

Abstract

A micro LED panel having a micro LED array and the system and method to manufacture the micro LED panel are provided by the present disclosure. The micro LED array includes at least one micro LED structure. The micro LED structure at least includes: a mesa structure and a photonic crystal structure array. The photonic crystal structure array formed through the mesa structure from top to bottom, thereby realizing higher directional light emission, simpler structure and lower cost.

1 . A micro LED panel including a micro LED array, comprising a plurality of micro LED structures, wherein each of the plurality of micro LED structures comprises:
 a mesa structure, comprising a first type epitaxial layer, a light emitting layer, and a second type epitaxial layer from bottom to top; and   a photonic crystal structure array comprising a plurality of photonic crystal structures, each photonic crystal structure of the plurality of photonic crystal structures being formed through the mesa structure from top to bottom, and a gap being between adjacent photonic crystal structures of the plurality of photonic crystal structures.   
     
     
         2 . The micro LED panel according to  claim 1 , wherein:
 a top of the plurality of photonic crystal structures is aligned with a top of the mesa structure; and   a bottom of the plurality of photonic crystal structures is aligned with a bottom of the mesa structure.   
     
     
         3 . The micro LED panel according to  claim 1 , wherein;
 each photonic crystal structure is a one-dimensional nano-structure; and   the one-dimensional nano-structure is formed perpendicular to the light emitting layer and along a light emitting direction of the mesa structure.   
     
     
         4 - 5 . (canceled) 
     
     
         6 . The micro LED panel according to  claim 3 , wherein:
 a diameter of the one-dimensional nano-structure is less than or equal to about 1000 nm; and   a width of the mesa structure is less than or equal to about 3 μm.   
     
     
         7 . (canceled) 
     
     
         8 . The micro LED panel according to  claim 1 , wherein a dielectric layer is filled in the gap between adjacent photonic crystal structures of the plurality of photonic crystal structures. 
     
     
         9 . The micro LED panel according to  claim 8 , wherein the dielectric layer is further formed on a sidewall of the mesa structure. 
     
     
         10 . (canceled) 
     
     
         11 . The micro LED panel according to  claim 8 , wherein the dielectric layer is transparent and electrically isolated. 
     
     
         12 . (canceled) 
     
     
         13 . The micro LED panel according to  claim 1 , wherein the light emitting layer comprises a plurality of stacked pairs of quantum wells. 
     
     
         14 . The micro LED panel according to  claim 1 , wherein a cross section of the light emitting layer has a straight line shape without bending. 
     
     
         15 . The micro LED panel according to  claim 1 , wherein;
 a material of the first type epitaxial layer is monocrystal; and   a material of the second type epitaxial layer is monocrystal.   
     
     
         16 . The micro LED panel according to  claim 1 , wherein:
 a top contact is formed on and electrically connected to a top of the mesa structure; and   a top conductive layer is formed on the top contact and the top of the mesa structure.   
     
     
         17 . The micro LED panel according to  claim 16 , wherein the top conductive layer is transparent. 
     
     
         18 - 84 . (canceled) 
     
     
         85 . The micro LED panel according to  claim 1 , wherein:
 the plurality of photonic crystal structures comprise a center photonic crystal structure, each of rest photonic crystal structures of the plurality of photonic crystal structures being formed around the center photonic crystal structure.   
     
     
         86 . The micro LED panel according to  claim 85 , wherein:
 each of the plurality of micro LED structures further comprises a top contact, formed on top of the center photonic crystal structure; and   a diameter of the center photonic crystal structure is greater than a diameter of each of rest photonic crystal structures of the plurality of photonic crystal structures.   
     
     
         87 - 165 . (canceled) 
     
     
         166 . The micro LED panel according to  claim 1 , wherein:
 a bottom contact layer is formed at a bottom of the mesa structure;   a bottom connected layer is formed at a bottom of the bottom contact layer; and   a space is formed between adjacent micro LED structures of the plurality of micro LED structures.   
     
     
         167 . The micro LED panel according to  claim 166 , wherein a bottom surface of the space is aligned with a bottom surface of the bottom connected layer. 
     
     
         168 . The micro LED panel according to  claim 166 , wherein a bottom surface of the space is aligned with a top surface of the bottom contact layer. 
     
     
         169 . The micro LED panel according to  claim 166 , wherein a dielectric layer is fully filled in the space. 
     
     
         170 . The micro LED panel according to  claim 16 , wherein the top conductive layer is continuously formed on an entirety of a top surface of the micro LED panel. 
     
     
         171 . The micro LED panel according to  claim 16 , wherein the top conductive layer covers a part of a top surface of the mesa structure.