US2025137131A1PendingUtilityA1

Deposition apparatus and method of depositing substrate

Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Oct 30, 2023Filed: May 22, 2024Published: May 1, 2025
Est. expiryOct 30, 2043(~17.2 yrs left)· nominal 20-yr term from priority
C23C 16/50C23C 16/56C23C 16/4585C23C 16/45565C23C 16/505C23C 16/4583C23C 16/482C23C 16/458H10P 72/0431H10P 14/6336
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Claims

Abstract

A deposition apparatus includes: a chamber; a support unit within the chamber and including a chuck and a driving member, wherein a substrate is seated on the chuck, wherein the chuck has a first process position and a second process position, wherein the first process position is for processing the substrate in a first process, wherein the second process position is for processing the substrate in a second process, wherein the driving member moves the chuck between the first process position and the second process position; a showerhead supplying process gas toward the substrate, when the chuck is located in the first process position; a power supply unit supplying power to generate plasma between the chuck and the showerhead; and a first ultraviolet lamp disposed in the chamber and emitting ultraviolet rays toward the substrate, when the chuck is located in the second process position.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A deposition apparatus comprising:
 a chamber;   a support unit within the chamber and including a chuck and a driving member, wherein a substrate is seated on the chuck, wherein the chuck has a first process position and a second process position, wherein the first process position is for processing the substrate in a first process, wherein the second process position is located below the first process position and is for processing the substrate in a second process, wherein the driving member is connected to the chuck and moves the chuck between the first process position and the second process position;   a showerhead disposed to face the chuck and supplying process gas toward an upper surface of the substrate that is seated on the chuck, when the chuck is located in the first process position;   a power supply unit connected to the showerhead and supplying power to generate plasma between the chuck and the showerhead; and   a first ultraviolet lamp disposed above the chuck in the chamber and emitting ultraviolet rays toward the upper surface of the substrate that is seated on the chuck, when the chuck is located in the second process position.   
     
     
         2 . The deposition apparatus of  claim 1 , wherein the first ultraviolet lamp is disposed adjacent to a side surface of the showerhead. 
     
     
         3 . The deposition apparatus of  claim 2 , wherein the first ultraviolet lamp protrudes beyond a lower surface of the showerhead. 
     
     
         4 . The deposition apparatus of  claim 2 , further comprising:
 a rotation support member disposed above the showerhead, and having a lower edge region and a rotation axis, wherein the lower edge region is coupled to the first ultraviolet lamp, and wherein the rotation axis is rotatably coupled to the chamber; and   a rotation drive member connected to the rotation axis and rotating the rotation support member and the first ultraviolet lamp around the rotation axis.   
     
     
         5 . The deposition apparatus of  claim 4 , wherein the first ultraviolet lamp is of a plurality of ultraviolet lamps, wherein the plurality of ultraviolet lamps are symmetrical to each other and spaced apart from each other at the lower edge region of the rotation support member with respect to the rotation axis. 
     
     
         6 . The deposition apparatus of  claim 5 , further comprising:
 a second ultraviolet lamp, wherein the first ultraviolet lamp and the second ultraviolet lamp are symmetrical to each other and spaced apart from each other at the lower edge region of the rotation support member with respect to the rotation axis.   
     
     
         7 . The deposition apparatus of  claim 4 , wherein the rotation support member has a shape of a disk and covers an upper portion of the showerhead. 
     
     
         8 . The deposition apparatus of  claim 1 , wherein the first ultraviolet lamp is coupled to a lower edge region of the showerhead. 
     
     
         9 . The deposition apparatus of  claim 8 , wherein the first ultraviolet lamp is disposed an annular shape along a circumference of the lower edge region of the showerhead. 
     
     
         10 . The deposition apparatus of  claim 1 , wherein the first ultraviolet lamp includes a lamp bulb emitting ultraviolet rays, a power source supplying power to the lamp bulb, a reflector surrounding the lamp bulb and reflecting ultraviolet rays, and a light transmitting window disposed between the lamp bulb and the chuck and transmitting ultraviolet rays that are emitted from the lamp bulb toward the upper surface of the substrate. 
     
     
         11 . The deposition apparatus of  claim 10 , wherein the lamp bulb is comprised of an H-type ultraviolet lamp bulb. 
     
     
         12 . The deposition apparatus of  claim 1 , wherein the first ultraviolet lamp emits ultraviolet rays with a wavelength of about 150 nm to about 400 nm. 
     
     
         13 . The deposition apparatus of  claim 1 , wherein a separation distance between the chuck and the first ultraviolet lamp is about 15 cm to about 30 cm, when the chuck is in the second process position. 
     
     
         14 . A deposition apparatus comprising:
 a chamber having a plurality of processing areas;   a transfer arm within the chamber and transferring a substrate to the plurality of processing areas;   a support unit in each of the processing areas, and including a chuck and a driving member, wherein a substrate is mounted on the chuck, wherein the chuck has a deposition position and an annealing position, wherein the deposition position is for a deposition process of the substrate, wherein the annealing position is located below the deposition position and is for an annealing process of the substrate, and wherein the driving member is connected to the chuck and moves the chuck between the deposition position and the annealing position;   a showerhead disposed to be opposite to the chuck in the chamber and supplying process gas toward an upper surface of the substrate that is seated on the chuck, when the chuck is located in the deposition position;   a power supply unit connected to the showerhead and supplying power to generate plasma in a processing area that is between the chuck and the showerhead; and   an ultraviolet lamp disposed in the chamber and emitting ultraviolet rays toward the upper surface of the substrate that is seated on the chuck, when the chuck is located in the annealing position.   
     
     
         15 . The deposition apparatus of  claim 14 , wherein the ultraviolet lamp is disposed adjacent to a side surface of the showerhead and protrudes beyond a lower surface of the showerhead, and
 a separation distance between the chuck and the ultraviolet lamp is about 15 cm to about 30 cm, when the chuck is in the annealing position.   
     
     
         16 . The deposition apparatus of  claim 14 , wherein the ultraviolet lamp is disposed adjacent to a side surface of the showerhead,
 the deposition apparatus further comprising:   a rotating support member having a lower portion that is coupled to the showerhead, wherein the ultraviolet lamp is coupled to a lower edge region of the showerhead, and wherein the rotation support member is provided with a rotation shaft that is rotatably coupled to the chamber; and   a rotation drive member connected to the rotation shaft and rotating the rotation support member and the ultraviolet lamp around the rotation shaft.   
     
     
         17 . The deposition apparatus of  claim 14 , wherein the ultraviolet lamp is coupled to a lower edge region of the showerhead. 
     
     
         18 . The deposition apparatus of  claim 14 , further comprising a rotation driver rotating the transfer arm and transferring the substrate from one processing area of the plurality of processing areas to another processing area of the plurality of processing areas. 
     
     
         19 . A method of depositing a substrate, comprising:
 a deposition operation of depositing a substrate that is mounted on a chuck, when the chuck is located in a first process position within a chamber; and   an annealing operation of lowering the chuck within the chamber after the deposition operation is performed and emitting ultraviolet rays toward an upper surface of the substrate that is seated on the chuck, when the chuck is located in a second process position that is lower than the first process position,   wherein the deposition operation and the annealing operation are repeatedly performed multiple times within the chamber.   
     
     
         20 . The method of  claim 19 , wherein in the deposition operation, process gas is supplied into the chamber to generate plasma and the substrate is deposited, and
 in the annealing operation, annealing is performed by emitting ultraviolet rays toward the upper surface of the substrate by using an ultraviolet lamp while stopping supply of the process gas and generation of the plasma.

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