US2025146114A1PendingUtilityA1

Method for grain growth mitigation in titanium, zirconium, and/or hafnium materials

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Assignee: U S ARMY DEVCOM ARMY RES LABORATORYPriority: Nov 8, 2023Filed: Nov 8, 2023Published: May 8, 2025
Est. expiryNov 8, 2043(~17.3 yrs left)· nominal 20-yr term from priority
Inventors:Matthew K. DunstanBrady G. ButlerJames D. Paramore
C22F 1/18C22F 1/02C22F 1/186C22F 1/183
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Claims

Abstract

Disclosed is a method for grain growth mitigation in titanium, zirconium, and/or hafnium materials. The method may include heating a titanium, zirconium, and/or hafnium material in a processing atmosphere to a first temperature above a β transus temperature of the material. At a point in time before the material is at the first temperature, the method may include introducing hydrogen gas into the processing atmosphere to achieve a predetermined hydrogen partial pressure in the processing atmosphere. The method may include holding the material at the first temperature in the processing atmosphere at the predetermined hydrogen partial pressure for a first period of time.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method for grain growth mitigation in titanium, zirconium, and/or hafnium materials, comprising:
 heating a titanium, zirconium, and/or hafnium material in a processing atmosphere to a first temperature above a β transus temperature of the titanium, zirconium, and/or hafnium material;   at a point in time before the titanium, zirconium, and/or hafnium material is at the first temperature, introducing hydrogen gas into the processing atmosphere to achieve a predetermined hydrogen partial pressure in the processing atmosphere; and   holding the titanium, zirconium, and/or hafnium material at the first temperature in the processing atmosphere at the predetermined hydrogen partial pressure for a first holding time.   
     
     
         2 . The method of  claim 1 , further comprising, after holding, cooling to a second temperature less than the first temperature. 
     
     
         3 . The method of  claim 2 , further comprising removing hydrogen gas from the processing atmosphere at the second temperature. 
     
     
         4 . The method of  claim 2 , further comprising, after cooling to the second temperature, annealing in an inert gas or vacuum atmosphere. 
     
     
         5 . The method of  claim 2 , further comprising, after cooling to the second temperature, cooling to a third temperature less than the second temperature. 
     
     
         6 . The method of  claim 1 , further comprising directly heating in an inert or reactive atmosphere. 
     
     
         7 . The method of  claim 1 , further comprising cooling in an inert or reactive atmosphere. 
     
     
         8 . The method of  claim 1 , wherein the titanium, zirconium, and/or hafnium material is titanium. 
     
     
         9 . The method of  claim 1 , wherein the titanium, zirconium, and/or hafnium material is zirconium or hafnium. 
     
     
         10 . The method of  claim 1 , wherein the titanium, zirconium, and/or hafnium material is an alloy. 
     
     
         11 . The method of  claim 10 , wherein the alloy includes titanium, and further includes zirconium and/or hafnium. 
     
     
         12 . The method of  claim 1 , wherein the first holding time is no more than 24 hours. 
     
     
         13 . The method of  claim 1 , wherein the first holding time is no more than 8 hours. 
     
     
         14 . The method of  claim 1 , wherein the predetermined hydrogen partial pressure is less than 0.5 atm.

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