Interferometry-based temperature monitoring in manufacturing systems

Abstract

Disclosed systems and techniques are directed to interferometry-based temperature monitoring of various operations performed in manufacturing systems. For example, the disclosed techniques include directing an incident light to a sample and detecting a plurality of interference patterns (IPs) associated with a light departing from the sample. The light departing from the sample can be generated upon interaction of the incident light with the sample. Each IP of the plurality of IPs can be associated with a respective temperature of a plurality of temperatures of the sample. The techniques further include determining, using the plurality of IPs, a temperature difference between a first temperature of the plurality of temperatures and a second temperature of the plurality of temperatures.

What is claimed is: 
     
         1 . A method of temperature monitoring in a manufacturing system, the method comprising:
 directing an incident light to a sample;   detecting a plurality of interference patterns (IPs) associated with a light departing from the sample, wherein the light departing from the sample is generated upon interaction of the incident light with the sample, and wherein each IP of the plurality of IPs is associated with a respective temperature of a plurality of temperatures of the sample; and   determining, using the plurality of IPs, a temperature difference between a first temperature of the plurality of temperatures and a second temperature of the plurality of temperatures.   
     
     
         2 . The method of  claim 1 , wherein the incident light comprises a focused beam. 
     
     
         3 . The method of  claim 2 , wherein the focused beam has a Gaussian profile. 
     
     
         4 . The method of  claim 1 , wherein the light departing from the sample comprises:
 a first reflected beam caused by reflection of the incident light from a first surface of the sample, and   a second reflected beam caused by reflection of the incident light from a second surface of the sample; and   
       wherein the plurality of IPs comprises one or more IPs between the first reflected beam and the second reflected beam. 
     
     
         5 . The method of  claim 1 , wherein the first temperature is associated with a first time and the second temperature is associated with a second time. 
     
     
         6 . The method of  claim 1 , wherein the first temperature is associated with a first location of the sample and the second temperature is associated with a second location of the sample. 
     
     
         7 . The method of  claim 1 , wherein determining the temperature difference comprises:
 identifying a displacement of a first IP of the plurality of IPs relative to a second IP of the plurality of IPs; and   determining, using a magnitude of the displacement, a magnitude of the temperature difference.   
     
     
         8 . The method of  claim 7 , further comprising:
 determining, using a direction of the displacement, a sign of the temperature difference.   
     
     
         9 . The method of  claim 1 , wherein the sample comprises a substrate. 
     
     
         10 . The method of  claim 9 , wherein the sample further comprises one or more films deposited on the substrate. 
     
     
         11 . The method of  claim 1 , wherein the incident light is a monochromatic light. 
     
     
         12 . The method of  claim 1 , wherein the light departing from the sample comprises a light transmitted through the sample. 
     
     
         13 . The method of  claim 1 , further comprising:
 configuring, responsive to the determined temperature difference, one or more processing operations of the manufacturing system.   
     
     
         14 . A system comprising:
 a source of light configured to generate an incident light;   a focusing optics configured to focus the incident light towards a sample;   a detection system configured to detect a plurality of interference patterns (IPs) in a light departing from the sample, wherein the light departing from the sample is generated upon interaction of the incident light with the sample, and wherein each IP of the plurality of IPs is associated with a respective temperature of a plurality of temperatures of the sample; and   a processing device configured to determine, using the plurality of IPs, a temperature difference between a first temperature of the plurality of temperatures and a second temperature of the plurality of temperatures.   
     
     
         15 . The system of  claim 14 , wherein the incident light comprises a focused beam. 
     
     
         16 . The system of  claim 14 , wherein the light departing from the sample comprises:
 a first reflected beam caused by reflection of the incident light from a first surface of the sample, and   a second reflected beam caused by reflection of the incident light from a second surface of the sample; and   
       wherein the plurality of IPs comprises one or more IPs between the first reflected beam and the second reflected beam. 
     
     
         17 . The system of  claim 14 , wherein the first temperature is associated with at least one of:
 a first time, or   a first location of the sample, and   
       wherein the second temperature is associated with at least one of:
 a second time, or 
 a second location of the sample. 
 
     
     
         18 . The system of  claim 14 , wherein to determine the temperature difference, the processing devices is to:
 identifying a displacement of a first IP of the plurality of IPs relative to a second IP of the plurality of IPs.   
     
     
         19 . The system of  claim 14 , wherein the sample comprises a substrate. 
     
     
         20 . A semiconductor manufacturing system comprising one or more chambers, the semiconductor manufacturing system comprising:
 a source of light configured to generate an incident light;   a focusing optics configured to focus the incident light towards a sample located in one of the one or more chambers;   a detection system configured to detect a plurality of interference patterns (IPs) in a light departing from the sample, wherein the light departing from the sample is generated upon interaction of the incident light with the sample, and wherein each IP of the plurality of IPs is associated with a respective temperature of a plurality of temperatures of the sample; and   a processing device configured to determine, using the plurality of IPs, a temperature difference between a first temperature of the plurality of temperatures and a second temperature of the plurality of temperatures.