US2025185319A1PendingUtilityA1

Open base transistor

62
Assignee: Nexperia BVPriority: Dec 5, 2023Filed: Dec 3, 2024Published: Jun 5, 2025
Est. expiryDec 5, 2043(~17.4 yrs left)· nominal 20-yr term from priority
Inventors:Hema Eraganahalli PuttaswamyHans-Martin Ritter
H10D 64/281H10D 89/60H10D 84/613H10D 10/441H10D 10/00H10D 62/177H10D 89/711
62
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Claims

Abstract

An open base transistor has an emitter region of a first doping polarity, a collector region of the first doping polarity, a base region of a second polarity different from the first doping polarity, and an additional region of the first doping polarity. The base region is resistively connected to the additional region via a resistor.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An open base transistor comprising:
 an emitter region of a first doping polarity;   a collector region of the first doping polarity;   a base region of a second polarity different from the first doping polarity; and   an additional region of the first doping polarity,   wherein the base region is resistively connected to the additional region via a resistor,   wherein the base region forms diode junctions with the emitter region, the collector region, and the additional region, and   wherein the emitter region and the collector region are each connected to respective external contacts.   
     
     
         2 . The open base transistor according to  claim 1 , wherein the additional region is arranged within the base region. 
     
     
         3 . The open base transistor according to  claim 1 , wherein the additional region is adjacent to the base region and forms a diode junction with the base region, and at least part of the additional region is not in contact with the base region. 
     
     
         4 . The open base transistor according to  claim 1 , wherein the emitter region and the collector region are arranged at a surface side of the open base transistor. 
     
     
         5 . The open base transistor according to  claim 1 , wherein the emitter region and the collector region are arranged at different sides of the open base transistor. 
     
     
         6 . The open base transistor according to  claim 1 , further comprising:
 an additional buried region of the first doping polarity,   wherein the additional buried region forms a diode junction with the base region,   wherein the additional buried region is connected to the additional region,   wherein the additional buried region is arranged in a layer below the base region, and   wherein the additional buried region is at least partly arranged below at least one of the emitter region and the collector region.   
     
     
         7 . The open base transistor according to  claim 1 , further comprising:
 a bulk region that has the first doping polarity type,   wherein the bulk region forms a diode junction with the base region, and   wherein the bulk region is connected to the additional region.   
     
     
         8 . The open base transistor according to  claim 6 , further comprising:
 a bulk region that has the first doping polarity type,   wherein the bulk region forms a diode junction with the base region, and   wherein the bulk region is connected to the additional region.   
     
     
         9 . The open base transistor according to  claim 6 , wherein the additional buried region or a bulk region has a doping level that is at least 10 times greater than a doping level of the base region. 
     
     
         10 . The open base transistor according to  claim 1 , further comprising:
 a base contact region of the second polarity,   wherein the base contact region is arranged in or at the base region,   wherein the base contact region is arranged at a surface side of the open base transistor, and   wherein the resistor is connected to the base region via the base contact region.   
     
     
         11 . The open base transistor according to  claim 10 , further comprising:
 a base contact region of the second polarity,   wherein the base contact region is arranged in or at the base region,   wherein the base contact region is arranged at a surface side of the open base transistor, and   wherein the resistor is connected to the base region via the base contact region.   
     
     
         12 . The open base transistor according to  claim 11 , further comprising:
 a bulk region that has the first doping polarity type,   wherein the bulk region forms a diode junction with the base region, and   wherein the bulk region is connected to the additional region.   
     
     
         13 . The open base transistor according  claim 1 , wherein the open base transistor is symmetrical, and wherein the emitter region and the collector region are reversible in operation. 
     
     
         14 . The open base transistor according to  claim 13 , wherein the emitter region and the collector region are arranged in multiple stripes. 
     
     
         15 . The open base transistor according to  claim 1 , further comprising:
 an additional diffusion region arranged below and adjacent to the emitter region; and   a further additional diffusion region arranged directly below the collector region,   wherein the further additional diffusion region has a doping level higher than a base doping level.   
     
     
         16 . The open base transistor according to  claim 15 , further comprising:
 a base contact region of the second polarity,   wherein the base contact region is arranged in or at the base region,   wherein the base contact region is arranged at a surface side of the open base transistor, and   wherein the resistor is connected to the base region via the base contact region.   
     
     
         17 . The open base transistor according to  claim 16 , further comprising:
 a base contact region of the second polarity,   wherein the base contact region is arranged in or at the base region,   wherein the base contact region is arranged at a surface side of the open base transistor, and   wherein the resistor is connected to the base region via the base contact region.   
     
     
         18 . The open base transistor according to  claim 1 , wherein the transistor has a value in a range of 100 Ohm to 100 kOhm. 
     
     
         19 . A semiconductor device comprising:
 an open base transistor;   an emitter region of the open base transistor that has a first doping polarity;   a collector region of the open base transistor that has the first doping polarity;   a base region of the open base transistor that has a second polarity different from the first doping polarity; and   an additional region of the open base transistor that has the first doping polarity,   wherein the base region is resistively connected to the additional region via a resistor,   wherein the base region forms diode junctions with the emitter region, the collector region, and the additional region, and   wherein the emitter region and the collector region are each connected to respective external contacts.   
     
     
         20 . An electrostatic discharge (ESD) protection device comprising:
 an open base transistor;   an emitter region of the open base transistor that has a first doping polarity;   a collector region of the open base transistor that has the first doping polarity;   a base region of the open base transistor that has a second polarity different from the first doping polarity;   an additional region of the open base transistor that has the first doping polarity,   wherein the base region is resistively connected to the additional region via a resistor,   wherein the base region forms diode junctions with the emitter region, the collector region, and the additional region, and   wherein the emitter region and the collector region are each connected to respective external contacts; and   a resistor arranged between a base region and an additional region of the open base transistor.

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