Light emitting diode structure

Abstract

A light emitting diode structure is provided. The light emitting diode includes a permanent substrate, a bonding metal composite layer, a mirror composite layer and an epitaxial semiconductor composite layer. The bonding metal composite layer is disposed on the permanent substrate, the mirror composite layer is disposed on the bonding metal composite layer, and the epitaxial semiconductor composite layer is disposed on the mirror reflection composite layer. There is a non-flat surface between the bonding metal composite layer and the permanent substrate, and the surface roughness (Ra) of the non-flat surface is less than 0.5 microns (μm).

What is claimed is: 
     
         1 . A light emitting diode structure, including:
 a permanent substrate;   a bonding metal composite layer, disposed on the permanent substrate;   a mirror reflection composite layer, disposed on the bonding metal composite layer; and   an epitaxial semiconductor composite layer, disposed on the mirror reflection composite layer;   wherein an interface between the bonding metal composite layer and the permanent substrate is a non-flat surface, and the surface roughness (Ra) of the non-flat surface is less than 0.5 micrometers (μm).   
     
     
         2 . The light emitting diode structure of  claim 1 , wherein the bonding metal composite layer includes a first bonding metal layer and a second bonding metal layer, and an interface between the first bonding metal layer and the second bonding metal layer is a flat surface. 
     
     
         3 . The light emitting diode structure of  claim 2 , wherein a material of the first bonding metal layer and the second bonding metal layer is selected from a group consisting of gold (Au), indium (In), tin (Sn) and their combinations. 
     
     
         4 . The light emitting diode structure of  claim 2 , wherein a thickness of the first bonding metal layer and the second bonding metal layer ranges from 1 micrometer to 2 micrometers. 
     
     
         5 . The light emitting diode structure of  claim 1 , wherein an interface between the bonding metal composite layer and the permanent substrate is a patterned surface, and a patterned depth of the patterned surface is less than 0.5 micrometers. 
     
     
         6 . The light emitting diode structure of  claim 1 , wherein the mirror reflection composite layer includes a first mirror reflection layer and a second mirror reflection layer, and an interface between the first mirror reflection layer and the second mirror reflection layer is a flat surface. 
     
     
         7 . The light emitting diode structure of  claim 6 , wherein a material of the first mirror reflection layer is selected from a group consisting of titanium dioxide (TiO2), silicon nitride (SiN x ), silicon dioxide (SiO 2 ), magnesium fluoride (MgF 2 ), indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), zinc oxide (ZnO) and their combinations. 
     
     
         8 . The light emitting diode structure of  claim 6 , wherein a material of the second mirror reflection layer is selected from a group consisting of silver (Ag), gold (Au), aluminum (Al), platinum (Pt), titanium (Ti), nickel (Ni) and their combinations. 
     
     
         9 . A light emitting diode structure, including:
 a permanent substrate;   a bonding metal composite layer, disposed on the permanent substrate;   a mirror reflection composite layer, disposed on the bonding metal composite layer; and   an epitaxial semiconductor composite layer, disposed on the mirror reflection composite layer, and an interface between the mirror reflection composite layer and the epitaxial semiconductor composite layer is a non-flat surface;   wherein the mirror reflection composite layer includes a first mirror reflection layer and a second mirror reflection layer, and an interface between the first mirror reflection layer and the second mirror reflection layer is a flat surface.   
     
     
         10 . The light emitting diode structure of  claim 9 , wherein a material of the first mirror reflection layer is selected from a group consisting of titanium dioxide (TiO 2 ), silicon nitride (SiN x ), silicon dioxide (SiO 2 ), magnesium fluoride (MgF 2 ), indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), zinc oxide (ZnO) and their combinations. 
     
     
         11 . The light emitting diode structure of  claim 9 , wherein a material of the second mirror reflection layer is selected from a group consisting of silver (Ag), gold (Au), aluminum (Al), platinum (Pt), titanium (Ti), nickel (Ni) and their combinations. 
     
     
         12 . The light emitting diode structure of  claim 9 , wherein an interface between the bonding metal composite layer and the permanent substrate is a non-flat surface, and the surface roughness (Ra) of the non-flat surface is less than 0.5 micrometers (μm). 
     
     
         13 . The light emitting diode structure of  claim 12 , wherein the bonding metal composite layer further includes a first bonding metal layer and a second bonding metal layer, and an interface between the first bonding metal layer and the second bonding metal layer is a flat surface. 
     
     
         14 . The light emitting diode structure of  claim 13 , wherein a material of the first bonding metal layer and the second bonding metal layer is selected from a group consisting of gold (Au), indium (In), tin (Sn) and their combinations. 
     
     
         15 . The light emitting diode structure of  claim 13 , wherein a thickness of the first bonding metal layer and the second bonding metal layer ranges from 1 micrometer to 2 micrometers. 
     
     
         16 . The light emitting diode structure of  claim 9 , wherein an interface between the bonding metal composite layer and the permanent substrate is a patterned surface, and a patterned depth of the patterned surface is less than 0.5 micrometers.