Light emitting device

Abstract

A light emitting device includes: a semiconductor laser element that has an upper face and a light emitting face, the semiconductor laser element including a first waveguide and a second waveguide, wherein the first and second waveguides extend along a direction perpendicular to the light-emitting face in a top view; and a plurality of wires, each having a first end connected to the upper face of the semiconductor laser element at a connection position, wherein a quantity of the wires that is connected to the upper face of the semiconductor laser element is in a range of two to five, inclusive. In the top view, a quantity of the wires whose connection positions are located in a region overlapping the first waveguide is zero, and a quantity of the wires whose connection positions are located in a region overlapping the second waveguide is zero.

What is claimed is: 
     
         1 . A light emitting device comprising:
 a semiconductor laser element that has an upper face and a light emitting face, the semiconductor laser element comprising a first waveguide and a second waveguide, wherein the first and second waveguides extend along a direction perpendicular to the light-emitting face in a top view; and   a plurality of wires, each having a first end connected to the upper face of the semiconductor laser element at a connection position, wherein a quantity of the wires that is connected to the upper face of the semiconductor laser element is in a range of two to five, inclusive,   wherein, in the top view, a quantity of the wires whose connection positions are located in a region overlapping the first waveguide is zero, and a quantity of the wires whose connection positions are located in a region overlapping the second waveguide is zero.   
     
     
         2 . The light emitting device according to  claim 1 , wherein the quantity of the wires that is connected to the upper face of the semiconductor laser element is three or five. 
     
     
         3 . The light emitting device according to  claim 1 , wherein each wire has a second end connected to a common element other than the semiconductor laser element. 
     
     
         4 . The light emitting device according to  claim 1 , wherein a distance between each respective adjacent pair of the wires is in a range of 200 μm to 500 μm. 
     
     
         5 . The light emitting device according to  claim 1 , wherein the semiconductor laser element is a red light emitting laser element. 
     
     
         6 . The light emitting device according to  claim 1 , wherein, in the top view, the connection position of each of the plurality of wires that is connected to the upper face of the semiconductor laser element is located between, but not on, (i) a first virtual line that passes through a point on the first waveguide closest to the second waveguide and is perpendicular to the light-emitting face and (ii) a second virtual line that passes through a point on the second waveguide closest to the first waveguide and is perpendicular to the light-emitting face. 
     
     
         7 . The light emitting device according to  claim 2 , wherein, in the top view, the connection position of each of the plurality of wires that is connected to the upper face of the semiconductor laser element is located between, but not on, (i) a first virtual line that passes through a point on the first waveguide closest to the second waveguide and is perpendicular to the light-emitting face and (ii) a second virtual line that passes through a point on the second waveguide closest to the first waveguide and is perpendicular to the light-emitting face. 
     
     
         8 . The light emitting device according to  claim 3 , wherein, in the top view, the connection position of each of the plurality of wires that is connected to the upper face of the semiconductor laser element is located between, but not on, (i) a first virtual line that passes through a point on the first waveguide closest to the second waveguide and is perpendicular to the light-emitting face and (ii) a second virtual line that passes through a point on the second waveguide closest to the first waveguide and is perpendicular to the light-emitting face. 
     
     
         9 . The light emitting device according to  claim 4 , wherein, in the top view, the connection position of each of the plurality of wires that is connected to the upper face of the semiconductor laser element is located between, but not on, (i) a first virtual line that passes through a point on the first waveguide closest to the second waveguide and is perpendicular to the light-emitting face and (ii) a second virtual line that passes through a point on the second waveguide closest to the first waveguide and is perpendicular to the light-emitting face. 
     
     
         10 . The light emitting device according to  claim 5 , wherein, in the top view, the connection position of each of the plurality of wires that is connected to the upper face of the semiconductor laser element is located between, but not on, (i) a first virtual line that passes through a point on the first waveguide closest to the second waveguide and is perpendicular to the light-emitting face and (ii) a second virtual line that passes through a point on the second waveguide closest to the first waveguide and is perpendicular to the light-emitting face. 
     
     
         11 . The light emitting device according to  claim 1 , wherein, in the top view, the connection position of each of the plurality of wires that is connected to the upper face of the semiconductor laser element is located in either (i) a first region that includes the second waveguide and is on a second waveguide side of a first virtual line that passes through a point on the first waveguide closest to the second waveguide and is perpendicular to the light-emitting face, or (ii) a second region that includes the first waveguide and is on a first waveguide side of a second virtual line that passes through a point on the second waveguide closest to the first waveguide and is perpendicular to the light-emitting face. 
     
     
         12 . The light emitting device according to  claim 2 , wherein, in the top view, the connection position of each of the plurality of wires that is connected to the upper face of the semiconductor laser element is located in either (i) a first region that includes the second waveguide and is on a second waveguide side of a first virtual line that passes through a point on the first waveguide closest to the second waveguide and is perpendicular to the light-emitting face, or (ii) a second region that includes the first waveguide and is on a first waveguide side of a second virtual line that passes through a point on the second waveguide closest to the first waveguide and is perpendicular to the light-emitting face. 
     
     
         13 . The light emitting device according to  claim 3 , wherein, in the top view, the connection position of each of the plurality of wires that is connected to the upper face of the semiconductor laser element is located in either (i) a first region that includes the second waveguide and is on a second waveguide side of a first virtual line that passes through a point on the first waveguide closest to the second waveguide and is perpendicular to the light-emitting face, or (ii) a second region that includes the first waveguide and is on a first waveguide side of a second virtual line that passes through a point on the second waveguide closest to the first waveguide and is perpendicular to the light-emitting face. 
     
     
         14 . The light emitting device according to  claim 4 , wherein, in the top view, the connection position of each of the plurality of wires that is connected to the upper face of the semiconductor laser element is located in either (i) a first region that includes the second waveguide and is on a second waveguide side of a first virtual line that passes through a point on the first waveguide closest to the second waveguide and is perpendicular to the light-emitting face, or (ii) a second region that includes the first waveguide and is on a first waveguide side of a second virtual line that passes through a point on the second waveguide closest to the first waveguide and is perpendicular to the light-emitting face. 
     
     
         15 . The light emitting device according to  claim 5 , wherein, in the top view, the connection position of each of the plurality of wires that is connected to the upper face of the semiconductor laser element is located in either (i) a first region that includes the second waveguide and is on a second waveguide side of a first virtual line that passes through a point on the first waveguide closest to the second waveguide and is perpendicular to the light-emitting face, or (ii) a second region that includes the first waveguide and is on a first waveguide side of a second virtual line that passes through a point on the second waveguide closest to the first waveguide and is perpendicular to the light-emitting face. 
     
     
         16 . A light emitting device comprising:
 a semiconductor laser element that has an upper face and a light emitting face, the semiconductor laser element comprising a first waveguide and a second waveguide, wherein the first and second waveguides extend along a direction perpendicular to the light-emitting face in a top view; and   a plurality of wires, each connected to the upper face of the semiconductor laser element at a connection position, wherein a quantity of the wires that is connected to the upper face of the semiconductor laser element is in a range of two to five, inclusive, wherein, in the top view, a quantity of the wires whose connection positions are located in a region overlapping the first waveguide is different from a quantity of the wires whose connection positions are located in a region overlapping the second waveguide.   
     
     
         17 . The light emitting device according to  claim 16 , wherein the quantity of the wires that is connected to the upper face of the semiconductor laser element is three or five. 
     
     
         18 . The light emitting device according to  claim 16 , wherein each wire has a second end connected to a common element other than the semiconductor laser element. 
     
     
         19 . The light emitting device according to  claim 16 , wherein a distance between each respective adjacent pair of the wires is in a range of 200 μm to 500 μm. 
     
     
         20 . The light emitting device according to  claim 16 , wherein the semiconductor laser element is a red light emitting laser element. 
     
     
         21 . The light emitting device according to  claim 16 , wherein, in the top view, the connection position of each of the plurality of wires that is connected to the upper face of the semiconductor laser element is located in either (i) a first region that includes the second waveguide and is on a second waveguide side of a first virtual line that passes through a point on the first waveguide closest to the second waveguide and is perpendicular to the light-emitting face, or (ii) a second region that includes the first waveguide and is on a first waveguide side of a second virtual line that passes through a point on the second waveguide closest to the first waveguide and is perpendicular to the light-emitting face. 
     
     
         22 . The light emitting device according to  claim 17 , wherein, in the top view, the connection position of each of the plurality of wires that is connected to the upper face of the semiconductor laser element is located in either (i) a first region that includes the second waveguide and is on a second waveguide side of a first virtual line that passes through a point on the first waveguide closest to the second waveguide and is perpendicular to the light-emitting face, or (ii) a second region that includes the first waveguide and is on a first waveguide side of a second virtual line that passes through a point on the second waveguide closest to the first waveguide and is perpendicular to the light-emitting face. 
     
     
         23 . The light emitting device according to  claim 18 , wherein, in the top view, the connection position of each of the plurality of wires that is connected to the upper face of the semiconductor laser element is located in either (i) a first region that includes the second waveguide and is on a second waveguide side of a first virtual line that passes through a point on the first waveguide closest to the second waveguide and is perpendicular to the light-emitting face, or (ii) a second region that includes the first waveguide and is on a first waveguide side of a second virtual line that passes through a point on the second waveguide closest to the first waveguide and is perpendicular to the light-emitting face. 
     
     
         24 . The light emitting device according to  claim 19 , wherein, in the top view, the connection position of each of the plurality of wires that is connected to the upper face of the semiconductor laser element is located in either (i) a first region that includes the second waveguide and is on a second waveguide side of a first virtual line that passes through a point on the first waveguide closest to the second waveguide and is perpendicular to the light-emitting face, or (ii) a second region that includes the first waveguide and is on a first waveguide side of a second virtual line that passes through a point on the second waveguide closest to the first waveguide and is perpendicular to the light-emitting face. 
     
     
         25 . The light emitting device according to  claim 20 , wherein, in the top view, the connection position of each of the plurality of wires that is connected to the upper face of the semiconductor laser element is located in either (i) a first region that includes the second waveguide and is on a second waveguide side of a first virtual line that passes through a point on the first waveguide closest to the second waveguide and is perpendicular to the light-emitting face, or (ii) a second region that includes the first waveguide and is on a first waveguide side of a second virtual line that passes through a point on the second waveguide closest to the first waveguide and is perpendicular to the light-emitting face.