Display Device and Head-Mounted Display Apparatus

Abstract

A display device includes a substrate including a light-emissive area and a non-light-emissive area, a diode type bank located on the non-light-emissive area and separating a plurality of sub-pixels from each other, a light-emitting element disposed in each of the plurality of sub-pixels, and an encapsulation portion disposed on the light-emitting element.

What is claimed is: 
     
         1 . A display device comprising:
 a substrate including a light-emissive area and a non-light-emissive area;   a diode type bank located on the non-light-emissive area and constructed to separate a plurality of sub-pixels from each other;   a light-emitting element disposed in each of the plurality of sub-pixels; and   an encapsulation portion disposed on the light-emitting element.   
     
     
         2 . The display device of  claim 1 , wherein the diode type bank includes an opaque semiconductor material. 
     
     
         3 . The display device of  claim 1 , wherein the diode type bank includes a first semiconductor layer and a second semiconductor layer disposed on the first semiconductor layer. 
     
     
         4 . The display device of  claim 3 , wherein the first semiconductor layer includes amorphous silicon doped with a first conductivity type impurity, and the second semiconductor layer includes amorphous silicon doped with a second conductivity type impurity,
 wherein the first conductivity type impurity and the second conductivity type impurity are of different conductivity types.   
     
     
         5 . The display device of  claim 4 , wherein the first conductivity type impurity includes n-type impurities including phosphorus (P), arsenic (AS), or antimony (Sb),
 wherein the second conductivity type impurity includes p-type impurities including boron (B), aluminum (Al), gallium (Ga), or indium (In).   
     
     
         6 . The display device of  claim 4 , wherein each of the first semiconductor layer and the second semiconductor layer has a lower density than a density of polycrystalline silicon or single crystalline silicon. 
     
     
         7 . The display device of  claim 4 , wherein each of the first semiconductor layer and the second semiconductor layer has a light transmittance lower than 5%. 
     
     
         8 . The display device of  claim 1 , wherein the light-emitting element includes:
 a first electrode overlapping the light-emissive area and having an edge covered by the diode type bank;   an organic light-emitting layer disposed on the first electrode; and   a second electrode disposed on the organic light-emitting layer.   
     
     
         9 . The display device of  claim 8 , wherein the diode type bank includes:
 a first semiconductor layer having a portion overlapping an edge of the first electrode, wherein the first semiconductor layer is doped with a first conductivity type impurity;   a second semiconductor layer disposed on the first semiconductor layer and doped with a second conductivity type impurity different from the first conductivity type impurity; and   a first depletion area of a first width disposed in a boundary area between the first semiconductor layer and the second semiconductor layer.   
     
     
         10 . The display device of  claim 9 , wherein the first conductivity type impurity includes n-type impurities, and the second conductivity type impurity includes p-type impurities. 
     
     
         11 . The display device of  claim 9 , wherein the diode type bank is disposed between the first electrode receiving a positive (+) voltage and the second electrode receiving a negative (−) voltage,
 wherein the diode type bank includes a second depletion area between the first semiconductor layer and the second semiconductor layer, the second depletion region having a second width greater than first width of the first depletion region, and wherein no current flows in the second depletion area. 
 
     
     
         12 . A head-mounted display apparatus comprising:
 a display device;   a case for accommodating the display device therein; and   a lens array disposed at one side of the case and configured to display an image output from the display device,   wherein the display device includes:
 a substrate including a light-emissive area and a non-light-emissive area; 
 a diode type bank located on the non-light-emissive area and constructed to separate a plurality of sub-pixels from each other; 
 a light-emitting element disposed in each of the plurality of sub-pixels; and 
 an encapsulation portion disposed on the light-emitting element. 
   
     
     
         13 . The head-mounted display apparatus of  claim 12 , wherein the diode type bank includes a first semiconductor layer and a second semiconductor layer disposed on the first semiconductor layer. 
     
     
         14 . The head-mounted display apparatus of  claim 13 , wherein the first semiconductor layer includes amorphous silicon doped with a first conductivity type impurity, and the second semiconductor layer includes amorphous silicon doped with a second conductivity type impurity,
 wherein the first conductivity type impurity and the second conductivity type impurity are of different conductivity types.   
     
     
         15 . The head-mounted display apparatus of  claim 14 , wherein the first conductivity type impurity includes n-type impurities including phosphorus (P), arsenic (AS), or antimony (Sb),
 wherein the second conductivity type impurity includes p-type impurities including boron (B), aluminum (Al), gallium (Ga), or indium (In).   
     
     
         16 . The head-mounted display apparatus of  claim 14 , wherein the diode type bank further includes a first depletion area of a first width disposed in a boundary area between the first semiconductor layer and the second semiconductor layer.