Chemical Mechanical Polishing Pad Dresser and Manufacturing Method Thereof

Abstract

The present invention provides a chemical mechanical polishing pad dresser, which comprises: a substrate having an upper surface; and an abrasive layer covering the upper surface of the substrate, and the abrasive layer including a bonding layer and a plurality of abrasive particles embedded in the bonding layer. Each of the abrasive particles has a tip height, which is a distance between the highest point of each abrasive particle and a surface of the bonding layer; wherein the chemical mechanical polishing pad dresser has an imaginary surface, which is a plane calculated on the basis of the average of each of the tip heights of the plurality of abrasive particles, and wherein the distance between the tip height of each of the abrasive particles and the imaginary surface is a value of the tip variation, which is less than 50 μm; besides, 80% or more of the abrasive particles have a value of the tip variation between the tip height of each of the abrasive particles and the imaginary surface which is less than 30 μm. By controlling the distance between the tip heights of the plurality of abrasive particles and the imaginary surface, the present invention can effectively reduce the occurrence of killer diamond, thereby reducing the probability that the dresser will occur deep grooves on the polishing pad during polishing process, causing wafer scratches, and reducing the yield of the wafer.

What is claimed is: 
     
         1 . A chemical mechanical polishing pad dresser, comprising:
 a substrate having an upper surface; and   an abrasive layer covering the upper surface of the substrate, the abrasive layer comprising a bonding layer and a plurality of abrasive particles embedded in the bonding layer, and each of the abrasive particles having a tip height, which is a distance between the highest point of each abrasive particle and a surface of the bonding layer;   wherein the chemical mechanical polishing pad dresser has an imaginary surface, which is a plane calculated on the basis of the average of each of the tip heights of the plurality of abrasive particles, and wherein the distance between the tip height of each of the abrasive particles and the imaginary surface is a value of the tip variation, which is less than 50 μm; and   80% or more of the abrasive particles have a value of the tip variation between the tip height of each of the abrasive particles and the imaginary surface which is less than 30 μm.   
     
     
         2 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the abrasive particles have a value of the tip variation between the tip height of each of the abrasive particles and the imaginary surface which is less than 30 μm. 
     
     
         3 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the abrasive particles have a value of the tip variation between the tip height of each of the abrasive particles and the imaginary surface which is less than 15 μm. 
     
     
         4 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein 95% or more of the abrasive particles have a value of the tip variation between the tip height of each of the abrasive particles and the imaginary surface which is less than 30 μm. 
     
     
         5 . The chemical mechanical polishing pad dresser according to  claim 4 , wherein 99% or more of the abrasive particles have a value of the tip variation between the tip height of each of the abrasive particles and the imaginary surface which is less than 30 μm. 
     
     
         6 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the tip height of each of the abrasive particles is 20 μm to 300 μm. 
     
     
         7 . The chemical mechanical polishing pad dresser according to  claim 6 , wherein a standard deviation of the tip heights is less than 20 μm. 
     
     
         8 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the abrasive particles are arranged on the substrate in an array or a honeycomb. 
     
     
         9 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the material of the substrate is selected from a group consisting of metal, ceramic and polymer resin. 
     
     
         10 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the material of the bonding layer is a brazing material, an electroplating material, a ceramic material, a metal material or a polymer material. 
     
     
         11 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the abrasive particles are selected from a group consisting of natural diamond, synthetic diamond, polycrystalline diamond, cubic boron nitride, aluminum oxide and silicon carbide. 
     
     
         12 . A manufacturing method of a chemical mechanical polishing pad dresser with a leveling surface, comprising:
 (a) providing a substrate and an abrasive layer having a bonding layer and a plurality of abrasive particles, and the abrasive layer forming on an upper surface of the substrate;   (b) heat-curing the bonding layer, and the abrasive layer fixed on the upper surface of the substrate;   (c) measuring a tip height of each of the abrasive particles, and obtaining a plane calculated on the basis of the average of each of the tip heights of the plurality of abrasive particles as an imaginary surface; and   (d) adjusting the tip heights of the plurality of abrasive particles according to the imaginary surface such that the abrasive particles have a value of the tip variation between the tip height of each of the abrasive particles and the imaginary surface which is less than 50 μm, thereby obtaining the chemical mechanical polishing pad dresser with a leveling surface.   
     
     
         13 . The method according to  claim 12 , wherein the abrasive particles are arranged on the substrate in an array or a honeycomb. 
     
     
         14 . The method according to  claim 12 , wherein the bonding layer is formed on the substrate by brazing, electroplating, ceramic sintering, metal curing or polymer curing.