Chemical Mechanical Polishing Pad Dresser and Manufacturing Method Thereof

Abstract

The present invention provides a chemical mechanical polishing pad dresser, which comprises: a substrate having an upper surface; and an abrasive layer covering the upper surface of the substrate, and the abrasive layer including a bonding layer and a plurality of abrasive particles embedded in the bonding layer. Each of the abrasive particles has a tip height (H), which is a distance between the highest point of each abrasive particle and a surface of the bonding layer, and the abrasive particles have a particle size(S) of 40 μm to 800 μm; wherein the dresser has a leveling value (R) of 0.1 to 0.7 for the ratio of the tip height (H) to the particle size(S). The chemical mechanical polishing pad dresser of the present invention controls the ratio of the tip height to the particle size of the abrasive particles, thereby preventing the abrasive particles with different particle sizes referenced the same tip height as a baseline, and causing the polishing pad dresser to have incorrect working points of the abrasive particles, which further reduce defects such as scratch the wafer during processing.

What is claimed is: 
     
         1 . A chemical mechanical polishing pad dresser, comprising:
 a substrate having an upper surface; and   an abrasive layer covering the upper surface of the substrate, the abrasive layer comprising a bonding layer and a plurality of abrasive particles embedded in the bonding layer, each of the abrasive particles has a tip height (H), which is a distance between the highest point of each abrasive particle and a surface of the bonding layer, and the abrasive particles have a particle size(S) of 40 μm to 800 μm;   wherein the dresser has a leveling value (R) of 0.1 to 0.7 for the ratio of the tip height (H) to the particle size(S).   
     
     
         2 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the tip height (H) is ½ to ⅕ of the particle size(S), and the tip height (H) is 8 μm to 400 μm. 
     
     
         3 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the leveling value (R) is 0.2 to 0.5. 
     
     
         4 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the abrasive particles are arranged on the substrate in an array or a honeycomb. 
     
     
         5 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the material of the substrate is selected from a group consisting of metal, ceramic and polymer resin. 
     
     
         6 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the material of the bonding layer is a brazing material, an electroplating material, a ceramic material, a metal material or a polymer material. 
     
     
         7 . The chemical mechanical polishing pad dresser according to  claim 1 , wherein the abrasive particles are selected from a group consisting of natural diamond, synthetic diamond, polycrystalline diamond, cubic boron nitride, aluminum oxide and silicon carbide. 
     
     
         8 . The chemical mechanical polishing pad dresser according to  claim 7 , wherein the tip of the abrasive particle is in a shape of a blade, a cone, an arc, a cylinder, a pyramid or a prism. 
     
     
         9 . A manufacturing method of a chemical mechanical polishing pad dresser, comprising:
 (a) providing a substrate and an abrasive layer having a bonding layer and a plurality of abrasive particles, and the abrasive layer forming on an upper surface of the substrate;   (b) heat-curing the bonding layer, and the abrasive layer fixed on the upper surface of the substrate;   (c) measuring a tip height (H) of each of the abrasive particles and a particle size(S) of the plurality of abrasive particles; and   (d) controlling a leveling value (R) obtained by a ratio of the tip height (H) to the particle size(S) of the abrasive particles to 0.1 to 0.7 to prepare the chemical mechanical polishing pad dresser.   
     
     
         10 . The method according to  claim 9 , wherein the abrasive particles are arranged on the substrate in an array or a honeycomb. 
     
     
         11 . The method according to  claim 9 , wherein the bonding layer is formed on the substrate by brazing, electroplating, ceramic sintering, metal curing or polymer curing.