Low-transmission-loss single-crystal copper material and preparation method therefor, pcb and preparation method therefor and electronic component

Abstract

The present disclosure relates to the technical field of copper material preparation, in particular, to a low-transmission-loss single-crystal copper material and a preparation method thereof, a PCB and a preparation method thereof and an electronic component. The preparation method of the low-transmission-loss single-crystal copper material includes: forming a single-crystal copper layer on a substrate with a graphene layer on the surface in a mixed gas atmosphere of argon and hydrogen and at a temperature of 800-1065° C., then peeling off the single-crystal copper layer from the substrate. The volume ratio of argon and hydrogen in the mixed gas is (10-20):1. The preparation method of the low-transmission-loss single-crystal copper material provided by the present disclosure can significantly reduce the surface roughness Rz of the formed copper material, which is beneficial to further reducing the transmission loss of the entire low-transmission-loss single-crystal copper material, and the preparation method is simple and easy to operate.

What is claimed is: 
     
         1 . A preparation method for a low-transmission-loss single-crystal copper material, wherein the preparation method comprises: forming a single-crystal copper layer on a substrate with a surface of a graphene layer, in an atmosphere of a mixed gas of argon and hydrogen and at a temperature of 800-1065° C., and then peeling off the single-crystal copper layer from the substrate, wherein
 a volume ratio of argon to hydrogen in the mixed gas is (10-20): 1 . 
 
     
     
         2 . The preparation method according to  claim 1 , wherein the graphene layer is a single-crystal graphene layer. 
     
     
         3 . The preparation method according to  claim 1 , wherein a preparation step of the single crystal copper layer comprises: forming the single-crystal copper layer on the graphene layer of the substrate by atomic deposition, in the atmosphere of the mixed gas and at the temperature of 800-1065° C. 
     
     
         4 . The preparation method according to  claim 3 , wherein a temperature of preparing the single-crystal copper layer is 900-1000° C. and the volume ratio of argon and hydrogen in the mixed gas is (13-15):1; and
 optionally, the substrate is a sapphire substrate whose surface is the graphene layer. 
 
     
     
         5 . The preparation method according to  claim 1 , wherein a preparation step of the single-crystal copper layer comprises electroplating copper on the graphene layer of the substrate to form an electroplated copper layer, then annealing in the atmosphere of the mixed gas and at the temperature of 800-1065° C. to transform the electroplated copper layer to the single-crystal copper layer. 
     
     
         6 . The preparation method according to  claim 5 , wherein a temperature for preparing the single-crystal copper layer is 900-1000° C., and the volume ratio of argon to hydrogen in the mixed gas is (13-15):1;
 optionally, the substrate is a copper substrate with the graphene layer on a surface; and 
 optionally, the substrate is a single-crystal copper substrate with the graphene layer on a surface. 
 
     
     
         7 . A low-transmission-loss single-crystal copper material, wherein
 the low-transmission-loss single-crystal copper material is made by the preparation method of a low-transmission-loss single-crystal copper material according to  claim 1 .   
     
     
         8 . A PCB, wherein the PCB comprises a signal layer and a first dielectric layer covering a surface of the signal layer, wherein
 a material of the signal layer comprises the low-transmission-loss single-crystal copper according to claim  7 ;   optionally, the signal layer has a signal transmission line structure, wherein the signal transmission line structure has a plurality of sequentially connected S-shaped transmission units;   optionally, the PCB further comprises a base and a first composite layer and a second composite layer respectively covering two opposite sides of the base in a thickness direction; and the first composite layer and the second composite layer each comprise the first dielectric layer, the signal layer, a second dielectric layer and a reference layer that sequentially cover a surface of the base along the thickness direction of the base;   optionally, along an extending direction of the signal transmission line structure, a distance between two opposite ends of the signal transmission line structure in the first composite layer and a distance between two opposite ends of the signal transmission line structure in the second composite layer are different;   optionally, along a direction from the first dielectric layer to the second dielectric layer, a width of the signal transmission line structure gradually increases, and a difference between a surface width of the signal transmission line structure close to the first dielectric layer and a surface width of the signal transmission line structure close to the second dielectric layer is less than 0.3 mil; and   optionally, the PCB further comprises a connection layer, wherein the connection layer is disposed between the first dielectric layer and the signal layer, and a material of the connection layer is a silane coupling agent.   
     
     
         9 . The PCB according to  claim 8 , wherein a thickness of the reference layer is 10 μm-100 μm, a thickness of the signal layer is 3 μm-70 μm, materials of the first dielectric layer and the second dielectric layer both are a composite material of glass fiber and resin, and thicknesses of the first dielectric layer and the second dielectric layer are each 10 μm-400 μm independently. 
     
     
         10 . The PCB according to  claim 8 , wherein the distance between the two opposite endpoints of the signal transmission line structure in the first composite layer is 7 inch-10 inch, and the distance between the two opposite endpoints of the signal transmission line structure in the second composite layer is 12 inch-15 inch. 
     
     
         11 . The PCB according to  claim 8 , wherein along the direction from the first dielectric layer to the second dielectric layer, the width of the signal transmission line structure gradually increases, and the difference between the surface width of the signal transmission line structure close to the first dielectric layer and the surface width of the signal transmission line structure close to the second dielectric layer is 0.1 mil-0.3 mil. 
     
     
         12 . The PCB according to  claim 8 , wherein the surface width of the signal transmission line structure close to the first dielectric layer is 7.2 mil-7.3 mil, and the surface width of the signal transmission line structure close to the second dielectric layer is 7.4 mil-7.6 mil. 
     
     
         13 . The PCB according to  claim 8 , wherein the silane coupling agent comprises at least one of methacryloxysilane and 3-aminopropyltrimethoxysilane. 
     
     
         14 . (canceled) 
     
     
         15 . (canceled) 
     
     
         16 . The preparation method according to  claim 2 , wherein a preparation step of the single crystal copper layer comprises: forming the single-crystal copper layer on the graphene layer of the substrate by atomic deposition, in the atmosphere of the mixed gas and at the temperature of 800-1065° C. 
     
     
         17 . The preparation method according to  claim 2 , wherein a preparation step of the single-crystal copper layer comprises electroplating copper on the graphene layer of the substrate to form an electroplated copper layer, then annealing in the atmosphere of the mixed gas and at the temperature of 800-1065° C. to transform the electroplated copper layer to the single-crystal copper layer. 
     
     
         18 . The PCB according to  claim 9 , wherein the distance between the two opposite endpoints of the signal transmission line structure in the first composite layer is 7 inch-10 inch, and the distance between the two opposite endpoints of the signal transmission line structure in the second composite layer is 12 inch-15 inch. 
     
     
         19 . The PCB according to  claim 9 , wherein along the direction from the first dielectric layer to the second dielectric layer, the width of the signal transmission line structure gradually increases, and the difference between the surface width of the signal transmission line structure close to the first dielectric layer and the surface width of the signal transmission line structure close to the second dielectric layer is 0.1 mil-0.3 mil. 
     
     
         20 . The PCB according to  claim 10 , wherein along the direction from the first dielectric layer to the second dielectric layer, the width of the signal transmission line structure gradually increases, and the difference between the surface width of the signal transmission line structure close to the first dielectric layer and the surface width of the signal transmission line structure close to the second dielectric layer is 0.1 mil-0.3 mil. 
     
     
         21 . The PCB according to  claim 9 , wherein the surface width of the signal transmission line structure close to the first dielectric layer is 7.2 mil-7.3 mil, and the surface width of the signal transmission line structure close to the second dielectric layer is 7.4 mil-7.6 mil. 
     
     
         22 . The PCB according to  claim 9 , wherein the silane coupling agent comprises at least one of methacryloxysilane and 3-aminopropyltrimethoxysilane.