Chemical mechanical polishing apparatus

Abstract

Provided is a chemical mechanical polishing apparatus including a polishing platen, a polishing pad on a first surface of the polishing platen, a polishing head on the polishing pad, the polishing head being configured to fix the wafer, a wafer accommodating part protruded from a first surface of the polishing head facing the first surface of the polishing pad, the wafer accommodating part having a ring shape along an edge of the first surface of the polishing head, and a cooling device including a cooling pipe on an exterior surface of the wafer accommodating part.

What is claimed is: 
     
         1 . A chemical mechanical polishing apparatus comprising:
 a polishing platen;   a polishing pad on a first surface of the polishing platen;   a polishing head on the polishing pad, the polishing head being configured to fix the wafer;   a wafer accommodating part protruded from a first surface of the polishing head facing the first surface of the polishing pad, the wafer accommodating part having a ring shape along an edge of the first surface of the polishing head; and   a cooling device comprising a cooling pipe on an exterior surface of the wafer accommodating part.   
     
     
         2 . The chemical mechanical polishing apparatus of  claim 1 , further comprising:
 a rotation axis connected to the first surface of the polishing head and extending in a first direction vertical to the first surface of the polishing pad,   wherein the cooling device further comprises:
 a first cooling water supply pipe on a first side with respect to the rotation axis and extending in the first direction, 
 a first connecting member between the first cooling water supply pipe and the cooling pipe, 
 a first cooling water discharge pipe on a second side with respect to the rotation axis and extending in the first direction, and 
 a second connecting member between the first cooling water discharge pipe and the cooling pipe. 
   
     
     
         3 . The chemical mechanical polishing apparatus of  claim 2 , wherein the polishing head is inclined at an angle with respect to the first surface of the polishing pad,
 wherein a connection portion of the first connecting member and the cooling pipe is on a first side of the polishing head,   wherein a connection portion of the second connecting member and the cooling pipe are on a second side of the polishing head, and   wherein a distance between the first side of the polishing head and the polishing pad is less than a distance between the second side of the polishing head and the polishing pad.   
     
     
         4 . The chemical mechanical polishing apparatus of  claim 3 , wherein the first connecting member and the second connecting member are on at least a partial region of the first surface of the polishing head and at least a partial region of at least one of the first side of the polishing head and the second side of the polishing head, and are spaced apart from the first surface and the side of the polishing head. 
     
     
         5 . The chemical mechanical polishing apparatus of  claim 2 , wherein the cooling pipe extending in the first direction from the first surface of the polishing pad. 
     
     
         6 . The chemical mechanical polishing apparatus of  claim 1 , wherein an inner circumference surface of the cooling pipe is spaced apart from an outer circumference surface of the wafer accommodating part. 
     
     
         7 . The chemical mechanical polishing apparatus of  claim 1 , further comprising:
 a rotation axis connected to the first surface of the polishing head and extending in a first direction vertical to the first surface of the polishing pad,   wherein the cooling device further comprises:
 a first cooling water supply pipe and a first cooling water discharge pipe inside the rotation axis and extending in the first direction, 
 a first connecting member between the first cooling water supply pipe and the cooling pipe, and 
 a second connecting member between the first cooling water discharge pipe and the cooling pipe. 
   
     
     
         8 . The chemical mechanical polishing apparatus of  claim 7 , wherein the first connecting member comprises a first upper connecting member on at least a partial region of the first surface of the polishing head, and a first lower connecting member on at least a partial region of at least one of the first side of the polishing head,
 wherein the second connecting member comprises a second upper connecting member on at least a partial region of the first surface of the polishing head, and a second lower connecting member on at least a partial region of the side of the polishing head,   wherein the first upper connecting member and the second upper connecting member are spaced apart from the first surface of the polishing head, and   wherein the first lower connecting member and the second lower connecting member contact the side of the polishing head.   
     
     
         9 . The chemical mechanical polishing apparatus of  claim 8 , further comprising:
 a second cooling water supply pipe and a second cooling water discharge pipe inside the rotation axis,   wherein the first cooling water supply pipe and the second cooling water supply pipe face each other in a horizontal direction, and the first cooling water discharge pipe and the second cooling water discharge pipe face each other in the horizontal direction.   
     
     
         10 . The chemical mechanical polishing apparatus of  claim 9 , wherein the first upper connecting member and the second upper connecting member include a first material, and the first lower connecting member and the second lower connecting member include a second material, a rigidity of the first material being less than a rigidity of the second material. 
     
     
         11 . The chemical mechanical polishing apparatus of  claim 1 , wherein the inner circumference surface of the cooling pipe contacts an outer circumference surface of the wafer accommodating part. 
     
     
         12 . The chemical mechanical polishing apparatus of  claim 1 , wherein the wafer accommodating part comprises a body part and a plurality of protruding portions protruded from a second surface of the body part and disposed along a circumference direction of the body part, and
 wherein at least some of the plurality of protruding portions comprise a thermal conductivity polymer material.   
     
     
         13 . The chemical mechanical polishing apparatus of  claim 1 , wherein the wafer accommodating part comprises a body part and a plurality of protruding portions protruded from a second surface of the body part and arranged along a circumference direction of the body part,
 wherein the body part includes a thermal conductivity polymer material.   
     
     
         14 . The chemical mechanical polishing apparatus of  claim 13 , wherein among an entire region of the lower surface of the body part, at least some of regions excluding the plurality of protruding portions and a region overlapping with the first surface of the polishing pad in a first direction, vertical to the first surface of the polishing pad, include a thermal conductivity polymer material. 
     
     
         15 . A chemical mechanical polishing apparatus comprising:
 a polishing platen;   a polishing pad on the polishing platen;   a polishing head on the polishing pad and configured to fix the wafer;   a wafer accommodating part protruded from a first surface of the polishing head facing a first surface of the polishing pad and having a ring shape positioned along an edge of the first surface of the polishing head; and   a cooling device comprising a cooling pipe inside or on an exterior surface of the wafer accommodating part;   wherein the wafer accommodating part comprises a body part and a plurality of protruding portions protruded from a second surface of the body part and arranged along a circumference direction of the body part; and   wherein at least some of the body part and the plurality of protruding portions include a thermal conductivity polymer material.   
     
     
         16 . The chemical mechanical polishing apparatus of  claim 15 , wherein the body part includes a polymer material, and
 wherein at least some of the plurality of protruding portions includes a thermal conductivity polymer material.   
     
     
         17 . The chemical mechanical polishing apparatus of  claim 15 , wherein the body part comprises a thermal conductivity polymer material, and
 wherein the plurality of protruding portions includes a polymer material.   
     
     
         18 . The chemical mechanical polishing apparatus of  claim 15 , wherein,
 among an entire region of the lower surface of the body part, at least some of regions excluding the plurality of protruding portions and region overlapping with the first surface of the polishing pad in a first direction, vertical to the first surface of the polishing pad, include a thermal conductivity polymer material.   
     
     
         19 . A chemical mechanical polishing apparatus comprising:
 a polishing platen;   a polishing pad comprising a lower polishing pad on a first surface of the polishing platen and an upper polishing pad on the lower polishing pad;   a polishing head on the polishing pad and configured to fix the wafer;   a wafer accommodating part protruded from the first surface of the polishing head facing the first surface of the polishing pad, the wafer accommodating part having a ring shape along an edge of the first surface of the polishing head;   a rotation axis connected to the first surface of the polishing head and extending in a first direction vertical to the first surface of the polishing pad; and   a cooling device on the polishing pad;   wherein the cooling device comprises:
 a cooling pipe an exterior surface of the wafer accommodating part; 
 a first cooling water supply pipe on a first side with respect to the rotation axis and extending in the first direction; 
 a first cooling water discharge pipe on a second side with respect to the rotation axis opposite to the first cooling water supply pipe, and extending in the first direction; 
 a second cooling water supply pipe between the first cooling water supply pipe and the first cooling water discharge pipe and extending in the first direction; 
 a second cooling water discharge pipe on a side with respect to the rotation axis opposite to the second cooling water supply pipe and extending in the first direction;
 a first connecting member between the first cooling water supply pipe and the cooling pipe; 
 
 a second connecting member between the first cooling water discharge pipe and the cooling pipe; 
 a third connecting member between the second cooling water supply pipe and the cooling pipe; and 
 a fourth connecting member between the second cooling water discharge pipe and the cooling pipe. 
   
     
     
         20 . The chemical mechanical polishing apparatus of  claim 19 , wherein the first connecting member, the second connecting member, the third connecting member, and the fourth connecting member are on at least a partial region of the first surface of the polishing head and at least a partial region of a side of the polishing head, and spaced apart from the first surface and the side of the polishing head.