Chemical mechanical polishing pad, and substrate processing apparatus including the same

Abstract

A chemical mechanical polishing pad includes a lower pad body, an upper pad body on an upper surface of the lower pad body and including a first protrusion and a second protrusion, the first protrusion and the second protrusion protruding in a first direction, a groove between the first protrusion and the second protrusion and extending in a second direction intersecting the first direction, at least one dissolution layer in the groove, and at least one protection layer in the groove, where the at least one protection layer and the at least one dissolution layer are configured to be dissolved by an aqueous solution, the at least one dissolution layer is configured to be dissolved by the aqueous solution at a first temperature, and the at least one protection layer is configured to be dissolved by the aqueous solution at a second temperature that is higher than the first temperature.

What is claimed is: 
     
         1 . A chemical mechanical polishing pad comprising:
 a lower pad body;   an upper pad body on an upper surface of the lower pad body and comprising a first protrusion and a second protrusion, the first protrusion and the second protrusion protruding in a first direction;   a groove between the first protrusion and the second protrusion and extending in a second direction intersecting the first direction;   at least one dissolution layer in the groove; and   at least one protection layer in the groove,   wherein the at least one protection layer and the at least one dissolution layer are configured to be dissolved by an aqueous solution,   wherein the at least one dissolution layer is configured to be dissolved by the aqueous solution at a first temperature, and   wherein the at least one protection layer is configured to be dissolved by the aqueous solution at a second temperature that is higher than the first temperature.   
     
     
         2 . The chemical mechanical polishing pad of  claim 1 , wherein a vertical level of a lower surface of the at least one protection layer increases from a center thereof to side surfaces thereof. 
     
     
         3 . The chemical mechanical polishing pad of  claim 2 , wherein the vertical level of the lower surface of the at least one protection layer increases from the center thereof to the side surfaces thereof at a substantially identical slope. 
     
     
         4 . The chemical mechanical polishing pad of  claim 2 , wherein, in a plan view, the at least one protection layer has a shape downwardly convex in the first direction. 
     
     
         5 . The chemical mechanical polishing pad of  claim 1 , wherein the at least one protection layer comprises a 2-oxazoline-based polymer, and
 wherein the at least one dissolution layer comprises at least one of polyacrylic acid, polymaleic anhydride, polymethacrylic acid, polyethylene oxide, polysaccharide, polyacrylate, and polyethylene glycol.   
     
     
         6 . The chemical mechanical polishing pad of  claim 1 , wherein the at least one protection layer comprises a plurality of protection layers,
 wherein the at least one dissolution layer comprises a plurality of dissolution layers,   wherein the plurality of protection layers and the plurality of dissolution layers are alternately stacked in the first direction, and   wherein at least one of the plurality of dissolution layers is sealed in the groove by at least one of the plurality of protection layers.   
     
     
         7 . The chemical mechanical polishing pad of  claim 1 , wherein a vertical level of a lower surface of the at least one protection layer increases from a center thereof toward side surfaces thereof in a line form. 
     
     
         8 . The chemical mechanical polishing pad of  claim 6 , wherein a vertical level of a lower surface of the at least one protection layer increases from a center thereof toward side surfaces thereof at a varying slope. 
     
     
         9 . The chemical mechanical polishing pad of  claim 1 , wherein the at least one protection layer comprises:
 a first protection layer, and   a second protection layer closer to the upper surface of the lower pad body than the first protection layer, the second protection layer comprising sidewalls extending from a lower portion of the first protection layer in the first direction and a lower wall extending in the second direction.   
     
     
         10 . A substrate processing apparatus comprising:
 a polishing platen;   a chemical mechanical polishing pad on an upper surface of the polishing platen; and   a groove depth adjuster above the chemical mechanical polishing pad,   wherein the chemical mechanical polishing pad comprises:
 a lower pad body on the upper surface of the polishing platen, 
 an upper pad body on an upper surface of the lower pad body and comprising a first protrusion and a second protrusion, the first protrusion and the second protrusion protruding in a first direction, 
 a groove between the first protrusion and the second protrusion and extending in a second direction intersecting the first direction, 
 at least one dissolution layer in the groove, and 
 at least one protection layer in the groove, and 
   wherein the groove depth adjuster comprises:
 a groove depth measurement member configured to measure a depth of the groove in the first direction, and a groove protection layer removal member configured to remove the at least one protection layer from the groove. 
   
     
     
         11 . The substrate processing apparatus of  claim 10 , wherein the at least one protection layer is configured to be removed by a laser beam, and
 wherein the groove protection layer removal member is configured to emit the laser beam toward the at least one protection layer.   
     
     
         12 . The substrate processing apparatus of  claim 10 , wherein the at least one protection layer comprises a plurality of protection layers,
 wherein the at least one dissolution layer comprises a plurality of dissolution layers, and   wherein the plurality of protection layers and the plurality of dissolution layers are alternately stacked in the first direction.   
     
     
         13 . The substrate processing apparatus of  claim 10 , wherein a vertical level of a lower surface of the at least one protection layer increases from a center thereof toward side surfaces thereof, and
 wherein a vertical level of an upper surface of the at least one dissolution layer increases from a center thereof toward side surfaces thereof.   
     
     
         14 . The substrate processing apparatus of  claim 13 , wherein the vertical level of the lower surface of the at least one protection layer increases from the center thereof to the side surfaces thereof at a substantially identical slope. 
     
     
         15 . The substrate processing apparatus of  claim 13 , wherein, in a plan view, the at least one protection layer has a shape downwardly convex in the first direction. 
     
     
         16 . The substrate processing apparatus of  claim 10 , further comprising:
 a pad conditioner configured to maintain a substantially constant illuminance of a surface of the chemical mechanical polishing pad,   wherein the groove depth adjuster is spaced apart from the pad conditioner, and is configured to be controlled independently of the pad conditioner.   
     
     
         17 . The substrate processing apparatus of  claim 10 , wherein the groove depth measurement member is further configured to measure the depth of the groove using a tip configured to contract and/or extend in the first direction. 
     
     
         18 . A substrate processing apparatus comprising:
 a polishing platen configured to rotate about a rotation axis extending in a first direction;   a chemical mechanical polishing pad on an upper surface of the polishing platen;   a polishing head facing the chemical mechanical polishing pad in the first direction;   a slurry supplier above the chemical mechanical polishing pad and spaced apart from the polishing head in a second direction intersecting the first direction, the slurry supplier configured to discharge polishing slurry toward an upper surface of the chemical mechanical polishing pad;   a pad conditioner on the chemical mechanical polishing pad and configured to clean the chemical mechanical polishing pad; and   a groove depth adjuster above the chemical mechanical polishing pad,   wherein the chemical mechanical polishing pad comprises:
 a lower pad body on the upper surface of the polishing platen, 
 an upper pad body on an upper surface of the lower pad body and comprising a first protrusion and a second protrusion, the first protrusion and the second protrusion protruding in a first direction, 
 a groove between the first protrusion and the second protrusion and extending in the second direction, 
 a plurality of dissolution layers in the groove, and 
 a plurality of protection layers respective on upper surfaces of the plurality of dissolution layers, 
   wherein the groove depth adjuster comprises:
 a groove depth measurement member configured to measure a depth of the groove in the first direction, and 
 a groove protection layer removal member configured to remove at least one protection layer of the plurality of protection layers from the groove, 
   wherein the plurality of dissolution layers are configured to be dissolved by an aqueous solution at a first temperature, and   wherein the plurality of protection layers are configured to be dissolved by the aqueous solution at a second temperature higher than the first temperature.   
     
     
         19 . The substrate processing apparatus of  claim 18 , wherein a vertical level of a lower surface of each of the plurality of protection layers increases from a center thereof toward side surfaces thereof, and
 wherein a vertical level of an upper surface of each of the plurality of dissolution layers increases from a center thereof toward side surfaces thereof.   
     
     
         20 . The substrate processing apparatus of  claim 18 , wherein each of the plurality of protection layers comprises a 2-oxazoline-based polymer, and
 wherein each of the plurality of dissolution layers comprises at least one of polyacrylic acid, polymaleic anhydride, polymethacrylic acid, polyethylene oxide, polysaccharide, polyacrylate, and polyethylene glycol.